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MT25QU02GCBB8E12-0AAT

产品描述IC FLASH 2G SPI 133MHZ 24TPBGA
产品类别存储   
文件大小1MB,共94页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
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MT25QU02GCBB8E12-0AAT概述

IC FLASH 2G SPI 133MHZ 24TPBGA

MT25QU02GCBB8E12-0AAT规格参数

参数名称属性值
存储器类型非易失
存储器格式闪存
技术FLASH - NOR
存储容量2Gb (256M x 8)
时钟频率133MHz
写周期时间 - 字,页8ms,2.8ms
存储器接口SPI
电压 - 电源1.7 V ~ 2 V
工作温度-40°C ~ 105°C(TC)
安装类型表面贴装
封装/外壳24-TBGA
供应商器件封装24-T-PBGA(6x8)

文档预览

下载PDF文档
2Gb, 1.8V Multiple I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
1.8V, Multiple I/O, 64KB Sector Erase
MT25QU02GCBB
Features
Stacked device (four 512Mb die)
SPI-compatible serial bus interface
Single and double transfer rate (STR/DTR)
Clock frequency
– 166 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
Dual/quad I/O commands for increased through-
put up to 90 MB/s
Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
Execute-in-place (XIP)
PROGRAM/ERASE SUSPEND operations
Volatile and nonvolatile configuration settings
Software reset
Additional reset pin for selected part numbers
3-byte and 4-byte address modes: enable memory
access beyond 128Mb
Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
Erase capability
– Die erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
Electronic signature
– JEDEC-standard 3-byte signature (BB22h)
– Extended device ID: two additional bytes identify
device factory options
JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 1.7–2.0V
• Density
– 2Gb
• Device stacking
– 4 die stacked
• Device generation
• Die revision
• Pin configuration
– RESET# and HOLD#
• Sector Size
– 64KB
• Packages – JEDEC-standard, RoHS-
compliant
– 24-ball T-PBGA 05/6mm x 8mm
(TBGA24)
• Standard security
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
Marking
U
02G
C
B
B
8
E
12
0
S
A
IT
AT
09005aef8661dc96
mt25q-qlkt-U02-CBB-S-IT.pdf - Rev. G 10/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MT25QU02GCBB8E12-0AAT相似产品对比

MT25QU02GCBB8E12-0AAT MT25QU02GCBB8E12-0AAT TR MT25QU02GCBB8E12-0SIT MT25QU02GCBB8E12-0SIT TR
描述 IC FLASH 2G SPI 133MHZ 24TPBGA IC FLASH 2G SPI 133MHZ 24TPBGA IC FLASH 2G SPI 133MHZ 24TPBGA IC FLASH 2G SPI 133MHZ 24TPBGA
技术 FLASH - NOR FLASH - NOR CMOS FLASH - NOR
存储器类型 非易失 非易失 - 非易失
存储器格式 闪存 闪存 - 闪存
存储容量 2Gb (256M x 8) 2Gb (256M x 8) - 2Gb (256M x 8)
时钟频率 133MHz 133MHz - 133MHz
写周期时间 - 字,页 8ms,2.8ms 8ms,2.8ms - 8ms,2.8ms
存储器接口 SPI SPI - SPI
电压 - 电源 1.7 V ~ 2 V 1.7 V ~ 2 V - 1.7 V ~ 2 V
工作温度 -40°C ~ 105°C(TC) -40°C ~ 105°C(TC) - -40°C ~ 85°C(TA)
安装类型 表面贴装 表面贴装 - 表面贴装
封装/外壳 24-TBGA 24-TBGA - 24-TBGA
供应商器件封装 24-T-PBGA(6x8) 24-T-PBGA(6x8) - 24-T-PBGA(6x8)

 
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