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MT41K512M8DA-125:P: 产品描述IC DRAM 4G PARALLEL 800MHZ; 产品类别存储; 文件大小3MB，共218页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/; 标准

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MT41K512M8DA-125:P概述

IC DRAM 4G PARALLEL 800MHZ

MT41K512M8DA-125:P规格参数

参数名称	属性值
存储器类型	易失
存储器格式	DRAM
技术	SDRAM - DDR3L
存储容量	4Gb （512M x 8）
时钟频率	800MHz
访问时间	13.5ns
存储器接口	并联
电压 - 电源	1.283 V ~ 1.45 V
工作温度	0°C ~ 95°C（TC）

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4Gb: x4, x8, x16 DDR3L SDRAM

Description

DDR3L SDRAM

MT41K1G4 – 128 Meg x 4 x 8 banks

MT41K512M8 – 64 Meg x 8 x 8 banks

MT41K256M16 – 32 Meg x 16 x 8 banks

Description

DDR3L SDRAM (1.35V) is a low voltage version of the

DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM

(Die Rev :E) data sheet specifications when running in

1.5V compatible mode.

•

Self refresh temperature (SRT)

Automatic self refresh (ASR)

Write leveling

Multipurpose register

Output driver calibration

Features

• V

= V

DDQ

= 1.35V (1.283–1.45V)

• Backward compatible to V

= V

DDQ

= 1.5V ±0.075V

– Supports DDR3L devices to be backward com-

patible in 1.5V applications

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT)

for data, strobe, and mask signals

• Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4

(via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• T

of 105°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

– 16ms, 8192-cycle refresh at >95°C to 105°C

Options

• Configuration

– 1 Gig x 4

– 512 Meg x 8

– 256 Meg x 16

• FBGA package (Pb-free) – x4, x8

– 78-ball (9mm x 10.5mm) Rev. E

– 78-ball (7.5mm x 10.6mm) Rev. N

– 78-ball (8mm x 10.5mm) Rev. P

• FBGA package (Pb-free) – x16

– 96-ball (9mm x 14mm) Rev. E

– 96-ball (7.5mm x 13.5mm) Rev. N

– 96-ball (8mm x 14mm) Rev. P

• Timing – cycle time

– 938ps @ CL = 14 (DDR3-2133)

– 1.07ns @ CL = 13 (DDR3-1866)

– 1.25ns @ CL = 11 (DDR3-1600)

• Operating temperature

– Commercial (0°C T

+95°C)

– Industrial (–40°C T

+95°C)

– Automotive (–40°C T

+105°C)

• Revision

Marking

1G4

512M8

256M16

-093

-107

-125

None

:E/:N/:P

Table 1: Key Timing Parameters

Speed Grade

-093

1, 2

-107

-125

Notes:

Data Rate (MT/s)

2133

1866

1600

Target

RCD-

RP-CL

14-14-14

13-13-13

11-11-11

RCD

(ns)

CL (ns)

13.09

13.91

13.75

13.09

13.91

13.75

13.09

13.91

13.75

1. Backward compatible to 1600, CL = 11 (-125).

2. Backward compatible to 1866, CL = 13 (-107).

09005aef85af8fa8

4Gb_DDR3L.pdf - Rev. R 09/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

4Gb: x4, x8, x16 DDR3L SDRAM

Description

Contents

Important Notes and Warnings ....................................................................................................................... 11

State Diagram ................................................................................................................................................ 12

Functional Description ................................................................................................................................... 13

Industrial Temperature ............................................................................................................................... 13

Automotive Temperature ............................................................................................................................ 13

General Notes ............................................................................................................................................ 14

Functional Block Diagrams ............................................................................................................................. 15

Ball Assignments and Descriptions ................................................................................................................. 17

Package Dimensions ....................................................................................................................................... 23

Electrical Specifications .................................................................................................................................. 29

Absolute Ratings ......................................................................................................................................... 29

Input/Output Capacitance .......................................................................................................................... 30

Thermal Characteristics .................................................................................................................................. 31

Electrical Specifications – I

Specifications and Conditions ............................................................................ 33

Electrical Characteristics – Operating I

Specifications .................................................................................. 44

Electrical Specifications – DC and AC .............................................................................................................. 49

DC Operating Conditions ........................................................................................................................... 49

Input Operating Conditions ........................................................................................................................ 50

DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 54

DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 57

DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 59

ODT Characteristics ....................................................................................................................................... 60

1.35V ODT Resistors ................................................................................................................................... 61

ODT Sensitivity .......................................................................................................................................... 62

ODT Timing Definitions ............................................................................................................................. 62

Output Driver Impedance ............................................................................................................................... 66

34 Ohm Output Driver Impedance .............................................................................................................. 67

DDR3L 34 Ohm Driver ................................................................................................................................ 68

DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 69

DDR3L Alternative 40 Ohm Driver ............................................................................................................... 70

DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 70

Output Characteristics and Operating Conditions ............................................................................................ 72

Reference Output Load ............................................................................................................................... 75

Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 75

Slew Rate Definitions for Differential Output Signals .................................................................................... 77

Speed Bin Tables ............................................................................................................................................ 78

Electrical Characteristics and AC Operating Conditions ................................................................................... 83

Command and Address Setup, Hold, and Derating .......................................................................................... 103

Data Setup, Hold, and Derating ...................................................................................................................... 110

Commands – Truth Tables ............................................................................................................................. 118

Commands ................................................................................................................................................... 121

DESELECT ................................................................................................................................................ 121

NO OPERATION ........................................................................................................................................ 121

ZQ CALIBRATION LONG ........................................................................................................................... 121

ZQ CALIBRATION SHORT .......................................................................................................................... 121

ACTIVATE ................................................................................................................................................. 121

READ ........................................................................................................................................................ 121

WRITE ...................................................................................................................................................... 122

PRECHARGE ............................................................................................................................................. 123

REFRESH .................................................................................................................................................. 123

09005aef85af8fa8

4Gb_DDR3L.pdf - Rev. R 09/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

4Gb: x4, x8, x16 DDR3L SDRAM

Description

SELF REFRESH .......................................................................................................................................... 124

DLL Disable Mode ..................................................................................................................................... 125

Input Clock Frequency Change ...................................................................................................................... 129

Write Leveling ............................................................................................................................................... 131

Write Leveling Procedure ........................................................................................................................... 133

Write Leveling Mode Exit Procedure ........................................................................................................... 135

Initialization ................................................................................................................................................. 136

Voltage Initialization/Change ........................................................................................................................ 138

Voltage Switching ............................................................................................................................... 139

Mode Registers .............................................................................................................................................. 140

Mode Register 0 (MR0) ................................................................................................................................... 141

Burst Length ............................................................................................................................................. 141

Burst Type ................................................................................................................................................. 142

DLL RESET ................................................................................................................................................ 143

Write Recovery .......................................................................................................................................... 144

Precharge Power-Down (Precharge PD) ...................................................................................................... 144

CAS Latency (CL) ....................................................................................................................................... 144

Mode Register 1 (MR1) ................................................................................................................................... 146

DLL Enable/DLL Disable ........................................................................................................................... 146

Output Drive Strength ............................................................................................................................... 147

OUTPUT ENABLE/DISABLE ...................................................................................................................... 147

TDQS Enable ............................................................................................................................................. 147

On-Die Termination .................................................................................................................................. 148

WRITE LEVELING ..................................................................................................................................... 148

POSTED CAS ADDITIVE Latency ................................................................................................................ 148

Mode Register 2 (MR2) ................................................................................................................................... 149

CAS Write Latency (CWL) ........................................................................................................................... 150

AUTO SELF REFRESH (ASR) ....................................................................................................................... 150

SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 150

SRT vs. ASR ............................................................................................................................................... 151

DYNAMIC ODT ......................................................................................................................................... 151

Mode Register 3 (MR3) ................................................................................................................................... 151

MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 152

MPR Functional Description ...................................................................................................................... 153

MPR Register Address Definitions and Bursting Order ................................................................................. 154

MPR Read Predefined Pattern .................................................................................................................... 159

MODE REGISTER SET (MRS) Command ........................................................................................................ 159

ZQ CALIBRATION Operation ......................................................................................................................... 160

ACTIVATE Operation ..................................................................................................................................... 161

READ Operation ............................................................................................................................................ 163

WRITE Operation .......................................................................................................................................... 174

DQ Input Timing ....................................................................................................................................... 182

PRECHARGE Operation ................................................................................................................................. 184

SELF REFRESH Operation .............................................................................................................................. 184

Extended Temperature Usage ........................................................................................................................ 186

Power-Down Mode ........................................................................................................................................ 187

RESET Operation ........................................................................................................................................... 195

On-Die Termination (ODT) ............................................................................................................................ 197

Functional Representation of ODT ............................................................................................................. 197

Nominal ODT ............................................................................................................................................ 197

Dynamic ODT ............................................................................................................................................... 199

Dynamic ODT Special Use Case ................................................................................................................. 199

09005aef85af8fa8

4Gb_DDR3L.pdf - Rev. R 09/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT41K512M8DA-125:P相似产品对比

	MT41K512M8DA-125:P	MT41K256M16TW-125:P	MT41K256M16LY-093:N	MT41K256M16TW-093 IT:P	MT41K512M8DA-093 IT:P	MT41K1G4RG-107:N	MT41K1G4RG-107:N TR	MT41K512M8DA-125:P TR	P1005E2803WBT	MT41K256M16TW-093:P TR
描述	IC DRAM 4G PARALLEL 800MHZ	IC DRAM 4G PARALLEL 800MHZ	IC DRAM 4G PARALLEL 1067MHZ	IC DRAM 4G PARALLEL 1067MHZ	IC DRAM 4G PARALLEL 1067MHZ	IC DRAM 4G PARALLEL 933MHZ	IC DRAM 4G PARALLEL 933MHZ	IC DRAM 4G PARALLEL 800MHZ	Fixed Resistor, Thin Film, 0.25W, 280000ohm, 75V, 0.05% +/-Tol, 25ppm/Cel, Surface Mount, 1005, CHIP	IC DRAM 4G PARALLEL 96FBGA
技术	SDRAM - DDR3L	SDRAM - DDR3L	CMOS	SDRAM - DDR3L	SDRAM - DDR3L	CMOS	SDRAM - DDR3L	SDRAM - DDR3L	THIN FILM	SDRAM - DDR3L
存储器类型	易失	易失	-	易失	易失	-	易失	易失	-	易失
存储器格式	DRAM	DRAM	-	DRAM	DRAM	-	DRAM	DRAM	-	DRAM
存储容量	4Gb （512M x 8）	4Gb （256M x 16）	-	4Gb （256M x 16）	4Gb （512M x 8）	-	4Gb （1G x 4）	4Gb （512M x 8）	-	4Gb （256M x 16）
时钟频率	800MHz	800MHz	-	1067MHz	1067MHz	-	933MHz	800MHz	-	1067MHz
访问时间	13.5ns	20ns	-	20ns	20ns	-	20ns	13.5ns	-	20ns
存储器接口	并联	并联	-	并联	并联	-	并联	并联	-	并联
电压 - 电源	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	-	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	-	1.283 V ~ 1.45 V	1.283 V ~ 1.45 V	-	1.283 V ~ 1.45 V
工作温度	0°C ~ 95°C（TC）	0°C ~ 95°C（TC）	-	-40°C ~ 95°C（TC）	-40°C ~ 95°C（TC）	-	0°C ~ 95°C（TC）	0°C ~ 95°C（TC）	-	0°C ~ 95°C（TC）

MT41K512M8DA-125:P

MT41K512M8DA-125:P概述

MT41K512M8DA-125:P规格参数

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