Data Sheet
PT7C5028B/5028C series
Crystal Oscillator Module ICs
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Features
•
•
•
•
•
•
•
Wide range of operating supply voltage: 1.5V to
3.6V
Optimized low crystal drive current oscillation for
miniature crystal units
PT7C5028BxDE series: for Wire Bonding (type
Ⅰ)
PT7C5028CxDE series: for Wire Bonding (type
Ⅱ)
Recommended oscillation frequency range
Low frequency version: 20MHz to 60MHz
Multi-stage frequency divider for low-frequency
output support: 0.75MHz(min)
Frequency divider built-in:
Selectable by version: f0, f0/2, f0/4, f0/8,
f0/16, f0/32, f0/64
•
•
-40 to 85℃ operating temperature range
Standby function
High impedance in standby mode, oscillator
stops
CMOS output duty level(1/2VDD)
•
•
•
50±5% output duty
15pF output drive capability
Die form and Wafer form
Description
The PT7C5028B/C series are miniature crystal
oscillator module ICs. The pad layouts are selective
from 2 types depending on package structures,
mounting methods, which are suitable for miniature
crystal oscillators. The PT7C5028B/C series can be
used to realize ultra miniature, ultra low voltage crystal
oscillators.
Ordering Information
Part no.
PT7C5028Bx-5GDE
PT7C5028Bx-5GWF
PT7C5028Bx-6GDE
PT7C5028Bx-6GWF
PT7C5028Cx-5GDE
PT7C5028Cx-5GWF
PT7C5028Cx-6GDE
PT7C5028Cx-6GWF
Package type
Die form
Wafer form
Die form
Wafer form
Die form
Wafer form
Die form
Wafer form
Note:
1.“x” shows the different function. See below
description.
2. “-5G” show the die thickness is 130±15µm without
coating； “-6G” show the die thickness is
100±10µm without coating.
Applications
•
Used for crystal oscillator
Series Configuration
Table 1 Part No suffix description
Part No
PT7C5028Bx
PT7C5028Cx
Pad Layout Type
Wire Bonding (type I)
Wire Bonding (type II)
PT0350(02/11)
1
Ver:0
Data Sheet
PT7C5028B/5028C series
Crystal Oscillator Module ICs
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Table 2 Part No suffix description
Part No
PT7C5028B1/C1
PT7C5028B2/C2
PT7C5028B3/C3
PT7C5028B4/C4
PT7C5028B5/C5
PT7C5028B6/C6
PT7C5028B7/C7
Operating
supply
voltage
range(V)
Oscillation
mode
Recommended
oscillation
frequency
range
*1
(MHz)
Output
frequency
f0
*2
f0/2
f0/4
f0/8
f0/16
f0/32
f0/64
Output
drive
capability
(mA)
Standby mode
Oscillator
stop function
Output
state
1.5 to 3.6
Fundamental
20 to 60
4
Yes
Hi-Z
Note:
* 1. The recommended operating frequency is a yardstick value derived from the crystal used for PTI characteristics authentication.
However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and
mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
* 2. f0 is oscillation frequency (input frequency).
Block Diagram
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
f0 output frequency
High impedance
Oscillator
Normal operation
Stopped
PT0350(02/11)
2
Ver:0
Data Sheet
PT7C5028B/5028C series
Crystal Oscillator Module ICs
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Power-saving Pull-up Resistor
The INHN pin pull-up resistance R
UP1
or R
UP2
changes in response to the input level (HIGH or LOW). When INHN is tied LOW
level, the pull-up resistance is large (R
UP1
), reducing the current consumed by the resistance. When INHN is left open circuit, the
pull-up resistance is small (R
UP2
), which increases the input susceptibility to external noise. However, the pull-up resistance ties
the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output.
Oscillation Detector Function
The PT7C5028B/C series also feature an oscillation detector circuit. This circuit functions disable the outputs until the oscillator
circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when
power is applied or when INHN is switched.
Pad Configuration
Sensor
Sensor
5
Q
GND
4
5
VDD
Q
4
6
VDD
INHN
3
6
INHN
GND
3
Part No
1
XTN
XT
2
Part No
1
XT
XTN
2
PT7C5028Bx
Pad Coordinate File
Y Coordinate
Pad Name
PT7C5028Cx
Pad Name
X Coordinate
X Coordinate
531.00
79.00
79.00
Y Coordinate
530.99
530.99
282.31
sensor
-40
650.00
1
79.00
79.00
4
2
531.00
79.00
5
3
531.00
282.31
6
Note:
Substrate is connected to GND.
Die Size:
690µm*690µm (Including scribe line size 80µm*80µm.)
Die Thickness:
130µm±15µm and 100µm±10µm without coating.
Pad Size:
90µm*90µm
Pad Description
Sym.
XTN
XT
INHN
VDD
GND
Q
Type
O
I
I
P
P
O
Description
Amplifier output.
Crystal oscillator connected between XT and XTN
Amplifier input.
Output state control input. High impedance when LOW. Power-saving pull-up resistor built
in.
Supply voltage
Ground
Output. Output frequency determined by internal circuit to one of
f0,f0/2,f0/4,f0/8,f0/16,f0/32,f0/64
PT0350(02/11)
3
Ver:0
Data Sheet
PT7C5028B/5028C series
Crystal Oscillator Module ICs
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Maximum Ratings
Storage Temperature ................................................................................- 65oC to +150oC
Supply Voltage range...................................................................................- 0.5V to +4.0V
Input voltage range........................................................................-0.5V to V
DD
+0.5V
Output voltage range ...................................................................-0.5V to V
DD
+0.5V
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
Sym.
V
DD
V
IN
T
A
f
0
f
OUT
Parameter
Supply voltage
Input voltage
Operating temperature
Oscillation frequency
*1
Output frequency
Conditions
C
L
≤15pF
Input pins
-
-
C
L
≤15pF
Min
1.5
GND
-40
20
0.75
Typ
-
-
+25
-
-
Max
3.6
V
DD
+85
60
60
Unit
V
V
°C
MHz
MHz
Note:*
1. The recommended oscillation frequency is a yardstick value derived from the crystal used for PTI characteristics authentication.
However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and
mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
PT0350(02/11)
4
Ver:0
Data Sheet
PT7C5028B/5028C series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
V
DD
=1.5 to 3.6V, T
A
=-40 to 85
℃
unless otherwise noted
Parameter
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Output leakage current
Sym
V
OH
V
OL
V
IH
V
IL
I
Z
Conditions
Q: Measurement cct3, I
OH
=4mA
Q: Measurement cct3, I
OL
=4mA
INHN, Measurement cct4
INHN, Measurement cct4
Q: Measurement
V
OH
=V
DD
cct5,
V
OL
=GND
IHNH=LOW
5028×1(f0),no load
INHN=open,f0=48MHz
f
OUT
=48MHz
Measurement cct 1,
5028×2(f0/64),no load
INHN=open,f0=48MHz
f
OUT
=24MHz
Measurement cct 1,
5028×3(f0/64),no load
INHN=open,f0=48MHz
f
OUT
=12MHz
Measurement cct 1,
5028×4(f0/64),no load
INHN=open,f0=48MHz
f
OUT
=6MHz
Measurement cct 1,
5028×5(f0/64),no load
INHN=open,f0=48MHz
f
OUT
=3MHz
Measurement cct 1,
5028×6(f0/64),no load
INHN=open,f0=48MHz
f
OUT
=1.5MHz
Measurement cct 1,
5028×7(f0/64),no load
INHN=open,f0=48MHz
f
OUT
=0.94MHz
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
Rating
Min
Typ
V
DD
-0.4
-
-
-
0.7V
DD
-
-
-
-
-
20
-
Max
-
0.4
-
0.3V
DD
20
-
2.4
2.0
1.5
2.3
1.8
1.4
2.0
1.5
1.2
1.7
1.4
1.15
1.6
1.3
1.1
1.5
1.3
1.1
1.5
1.3
1.1
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
-
1.6
1.3
1.0
1.5
1.2
0.9
1.3
1.0
0.8
1.1
0.9
0.75
1.05
0.85
0.7
1.0
0.85
0.7
1.0
0.85
0.7
-
-
-
-
-
-
-
-
-
Current consumption
I
DD
-
-
-
-
-
-
-
-
-
Standby current
INHN pull-up resistance
Oscillator feedback resistance
Oscillator capacitance
I
ST
R
UP1
R
UP2
R
f
C
G
C
D
Measurement cct1, INHN=LOW
Measurement cct6
-
Design value(a monitor pattern on a
wafer is tested), Excluding parasitic
capacitance
-
-
-
0.4
30
50
4.8
8
-
1.5
70
100
6
10
10
8
150
200
7.2
12
µA
MΩ
KΩ
KΩ
pF
pF
PT0350(02/11)
5
Ver:0
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