IC PHOTOTRANS IR 880NM SIDE-LOOK
参数名称 | 属性值 |
Brand Name | ON Semiconductor |
是否无铅 | 不含铅 |
厂商名称 | ON Semiconductor(安森美) |
包装说明 | PLASTIC PACKAGE-2 |
制造商包装代码 | 100CN |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 4 weeks |
Samacsys Description | IC, Fairchild, QSE113 Fairchild Semiconductor QSE113 25 ?? Infrared Phototransistor, Through-hole Side-looker Package |
其他特性 | HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER |
Coll-Emtr Bkdn Voltage-Min | 30 V |
配置 | SINGLE |
最大暗电源 | 100 nA |
红外线范围 | YES |
JESD-609代码 | e3 |
标称光电流 | 0.25 mA |
安装特点 | THROUGH HOLE MOUNT |
功能数量 | 1 |
最高工作温度 | 100 °C |
最低工作温度 | -40 °C |
光电设备类型 | PHOTO TRANSISTOR |
峰值波长 | 880 nm |
最大功率耗散 | 0.1 W |
最长响应时间 | 0.000008 s |
形状 | ROUND |
尺寸 | 1.65 mm |
表面贴装 | NO |
端子面层 | Tin (Sn) |
QSE113 | QSE114 | QSE114E3R0 | QSE113E3R0 | |
---|---|---|---|---|
描述 | IC PHOTOTRANS IR 880NM SIDE-LOOK | Phototransistors 1mA PHOTO TRANS | PHOTOTRANSISTOR IR 30V SIDELOOKR | PHOTOTRANSISTOR IR 30V SIDELOOK |
Brand Name | ON Semiconductor | ON Semiconductor | - | ON Semiconductor |
是否无铅 | 不含铅 | 不含铅 | - | 不含铅 |
厂商名称 | ON Semiconductor(安森美) | ON Semiconductor(安森美) | - | ON Semiconductor(安森美) |
包装说明 | PLASTIC PACKAGE-2 | PLASTIC PACKAGE-2 | - | LEAD FREE, PLASTIC PACKAGE-2 |
制造商包装代码 | 100CN | 100CN | - | 100CN |
Reach Compliance Code | compliant | compliant | - | compliant |
ECCN代码 | EAR99 | EAR99 | - | EAR99 |
Factory Lead Time | 4 weeks | 4 weeks | - | 1 week |
其他特性 | HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER | HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER | - | HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER |
Coll-Emtr Bkdn Voltage-Min | 30 V | 30 V | - | 30 V |
配置 | SINGLE | SINGLE | - | SINGLE |
最大暗电源 | 100 nA | 100 nA | - | 100 nA |
红外线范围 | YES | YES | - | YES |
JESD-609代码 | e3 | e3 | - | e3 |
标称光电流 | 0.25 mA | 1 mA | - | 0.25 mA |
安装特点 | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | - | THROUGH HOLE MOUNT |
功能数量 | 1 | 1 | - | 1 |
最高工作温度 | 100 °C | 100 °C | - | 100 °C |
最低工作温度 | -40 °C | -40 °C | - | -40 °C |
光电设备类型 | PHOTO TRANSISTOR | PHOTO TRANSISTOR | - | PHOTO TRANSISTOR |
峰值波长 | 880 nm | 880 nm | - | 880 nm |
最大功率耗散 | 0.1 W | 0.1 W | - | 0.1 W |
最长响应时间 | 0.000008 s | 0.000008 s | - | 0.000008 s |
形状 | ROUND | ROUND | - | ROUND |
尺寸 | 1.65 mm | 1.65 mm | - | 1.65 mm |
表面贴装 | NO | NO | - | NO |
端子面层 | Tin (Sn) | Tin (Sn) | - | Tin (Sn) |
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