(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
O
3.0
I
FRM
6.0
I
FSM
50
T
stg
T
J
−65 to +175
−65 to +175
°C
°C
A
A
Value
60
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Tab (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
1. 1 inch square pad size (1
×
0.5 inch) for each lead on FR4 board.
Symbol
Y
JCT
R
qJA
Value
2.7
57.7
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(i
F
= 3.0 Amps, T
J
= 25°C)
(i
F
= 6.0 Amps, T
J
= 25°C)
(i
F
= 3.0 Amps, T
J
= 125°C)
(i
F
= 6.0 Amps, T
J
= 125°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
i
R
1.0
0.8
12
4.0
Symbol
v
F
0.60
0.75
0.57
0.69
0.70
0.90
0.65
0.77
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
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NRVTS360TFS
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
A
= 175°C
T
A
= 150°C
1
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.1
0.0
T
A
= −55°C
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
10
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
1
T
A
= 85°C
T
A
= 25°C
0.1
0.2
T
A
= −55°C
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E−01
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
T
A
= 175°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.E−02
1.E−03
1.E−02
1.E−03
1.E−04
1.E−04
1.E−05
1.E−06
1.E−07
5
10
15
20
25
30
35
40
45
50
55
60
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1.E−05
1.E−06
T
A
= 25°C
T
A
= 25°C
1.E−07
5
10
15
20
25
30
35
40
45
50
55 60
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
1000
C, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
6
5
4
Figure 4. Maximum Reverse Characteristics
DC
R
qJC
= 4.0°C/W
SQUARE WAVE
3
2
1
0
120
100
10
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
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NRVTS360TFS
TYPICAL CHARACTERISTICS
P
F(AV)
, AVERAGE FORWARD POWER
DISSIPATION (W)
14
I
PK
/I
AV
= 20
12
I
PK
/I
AV
= 10
10
8
6
SQUARE WAVE
4
2
0
DC
0
1
2
3
I
PK
/I
AV
= 5
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
10
50% (DUTY CYCLE)
R(t) (C/W)
20%
1
10%
5.0%
2.0%
1.0%
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
Assumes 25°C ambient and soldered to a 650 mm
2
- 1 oz copper pad on PCB
0.001
PULSE TIME (s)
0.01
0.1
1.0
Figure 8. Typical Thermal Characteristics
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NRVTS360TFS
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
0.20 C
D
D1
8 7 6 5
A
B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
E1 E
4X
q
1 2 3 4
c
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
b
C A B
8X
6X
C
SEATING
PLANE
e
DETAIL A
DETAIL A
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0
_
−−−
12
_
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0
_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12
_
0.10
0.05
C
4X
SOLDERING FOOTPRINT*
e/2
1
4
8X
L
0.42
K
PACKAGE
OUTLINE
0.65
PITCH
4X
0.66
E2
E3
8
5
M
D2
BOTTOM VIEW
L1
0.75
0.57
3.60
2.30
G
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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