Doc No.
TT4-EA-13636
Revision.
4
Product Standards
MOS FET
MTM131270BBF
MTM131270BBF
Silicon P-channel MOS FET
Unit : mm
For switching
Features
Low Drain-source On-state Resistance : RDS(on) typ = 92 m
(VGS = -4.0 V)
Low drive voltage: 1.8 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
2.9
0.4
3
0.16
1
2
Marking Symbol : EU
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
Gate
Source
Drain
(0.95)(0.95)
1.9
1.5
2.8
1.1
Absolute Maximum Ratings Ta = 25
C
項目
記号
Drain-source Voltage
Gate-source Voltage
Drain current
Peak drain current
*1
Power dissipation
*2
Channel temperature
Operating ambient temperature
Storage Temperature Range
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
定格
-20
10
-2
-8
700
150
-40 to + 85
-55 to +150
単½
V
A
A
mW
°C
°C
°C
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
Internal Connection
(D)
3
Note *1 Pulse width
≦10
μs,
Duty cycle
≦1
%
*2 Measuring on ceramic board at 40
38
0.1 mm.
Absolute maximum rating PD without heat sink shall be made 200 mW.
1
(G)
2
(S)
Pin Name
1.
2.
3.
Gate
Source
Drain
Page 1 of 6
Established : 2011-07-19
Revised
: 2014-02-03
Doc No.
TT4-EA-13636
Revision.
4
Product Standards
MOS FET
MTM131270BBF
Electrical Characteristics Ta = 25
C
3
C
項目
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
記号
VDSS
IDSS
IGSS
Vth
条件
最小 標準 最大
-20
-1
10
-1.1
130
210
280
単½
V
A
V
m
S
ID = -1 mA, VGS = 0 V
VDS = -20 V, VGS = 0 V
VGS =
8
V, VDS = 0 V
ID = -1 mA, VDS = -10 V
RDS(on)1
ID = -1 A, VGS = -4 V
*1
RDS(on)2
ID = -1 A, VGS = -2.5 V
Drain-source ON resistance
RDS(on)3
ID = -0.5 A, VGS = -1.8 V
*1
|Yfs|
ID = -1 A, VDS = -10 V, f = 1 kHz
Forward transfer admittance
Short-circuit input capacitance (Common source)
Ciss
VDS = -10 V, VGS = 0 V
Short-circuit output capacitance (Common source)
Coss
f = 1 MHz
Reverse transfer capacitance (Common source)
Crss
td(on) VDD = -10 V, VGS = 0 to -4 V
Turn-on Delay Time
*2
*2
ID = -1 A
tr
Rise Time
*2
td(off) VDD = -10 V, VGS = -4 to 0 V
Turn-off Delay Time
*2
ID = -1 A
tf
Fall Time
-0.4
-0.75
92
115
161
300
30
35
6
8
57
55
3
pF
ns
Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page 2 of 6
Established : 2011-07-19
Revised
: 2014-02-03
Doc No.
TT4-EA-13636
Revision.
4
Product Standards
MOS FET
MTM131270BBF
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
VDD = -10 V
ID = -1 A
RL = 10
0V
-4 V
PW = 10
s
D.C.
1 %
10 %
90 %
90 %
10 %
Page 3 of 6
Established : 2011-07-19
Revised
: 2014-02-03
Doc No.
TT4-EA-13636
Revision.
4
Product Standards
MOS FET
MTM131270BBF
Technical Data ( reference )
ID - VDS
-2
VGS = -4.0 V
-1.8 V
ID - VGS
-0.05
-0.04
Drain current ID (A)
Drain current ID (A)
-1.5
-2.5 V
-1.5 V
Ta = 85
℃
-0.03
25
℃
-0.02
-0.01
0
-1
-0.5
-1.0 V
-40
℃
0
0
-0.2
-0.4
-0.6
Drain-source voltage VDS (V)
0
-0.2
-0.4
-0.6
-0.8
-1
Gate-source voltage VGS (V)
VDS - VGS
Drain-source On-state Resistance
RDS(on) (m)
-1
1000
RDS(on) - ID
Drain-source Voltage VDS (V)
-0.8
-0.6
-0.4
-0.2
-0.5 A
0
0
-1
-2
-3
-4
-5
ID = -2 A
-2.5 V
100
-1.8 V
-1 A
VGS = -4 V
10
-0.1
-1
Gate-source Voltage VGS (V)
Drain Current ID (A)
Capacitance - VDS
1000
-10
Dynamic Input/Output Characteristics
Gate-source Voltage VGS (V)
Capacitance C (pF)
Ciss
-8
-6
-4
-2
0
VDD = -10 V
100
Coss
Crss
10
-0.1
-1
-10
-100
0
2
4
6
8
10
Drain-source voltage VDS (V)
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2011-07-19
Revised
: 2014-02-03
Doc No.
TT4-EA-13636
Revision.
4
Product Standards
MOS FET
MTM131270BBF
Technical Data ( reference )
Vth - Ta
Gate-source Threshold Voltage Vth (V)
-1
Drain-source On-resistance
RDS(on) (mΩ)
-0.8
-0.6
-0.4
-0.2
0
-50
0
50
Temperature (℃)
100
150
RDS(on) - Ta
200
150
100
50
0
-50
0
50
Temperature (℃)
VGS = -1.8 V
-2.5 V
-4.0 V
100
150
PD - Ta
1
PD - Tc
Total Power Dissipation PD (W)
0.8
0.6
0.4
Mounted on ceramic board
(40
38
0.1 mm)
Non-heat sink
0.2
0
0
50
100
150
Temperature Ta (C)
Rth - tsw
1000
-100
Safe Operating Area
IDp = -8 A
Thermal resistance Rth (C/W)
Drain Current ID (A)
-10
-1
-0.1
-0.01
1 ms
10 ms
Operation in this area
is limited by RDS(on)
Ta = 25 °C,
Glass epoxy board (25.4
25.4
0.8 mm)
coated with copper foil,
2
which has more than 300 mm .
100
100 ms
1s
DC
10
0.1
1
10
100
1000
-0.001
-0.01
-0.1
-1
-10
-100
Pulse Width tsw (s)
Drain-source voltage VDS (V)
Page 5 of 6
Established : 2011-07-19
Revised
: 2014-02-03
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