UNISONIC TECHNOLOGIES CO., LTD
70N06
70 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC
70N06
is n-channel enhancement mode
power field effect transistors with stable off-state
characteristics, fast switching speed, low thermal
resistance, usually used at telecom and computer
application.
TO-220
1
TO-220F
FEATURES
* R
DS(ON)
= 15mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: 70N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
70N06-TA3-T
70N06L-TA3-T
70N06-TF3-T
70N06L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
70N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating Blank: Pb/Sn
,
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QW-R502-089,A
70N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate to Source Voltage
±20
V
T
C
= 25℃
70
A
Continuous Drain Current
I
D
T
C
= 100℃
56
A
Drain Current Pulsed (Note 1)
I
DM
280
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
600
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
20
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
10
V/ns
Total Power Dissipation (T
C
= 25℃)
200
W
P
D
1.4
W/℃
Derating Factor above 25℃
℃
Operation Junction Temperature
T
J
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
62.5
MAX
1.2
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 µA
MIN
60
0.08
1
10
100
-100
2.0
12
3300
530
80
12
79
80
52
90
20
30
4.0
15
TYP
MAX UNIT
V
V/℃
µA
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
△
BV
DSS
/△T
J
I
D
= 1mA, Referenced to 25℃
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V,
T
J
= 150℃
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 35 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
V
DD
= 30V, I
D
=70 A,
V
GS
=10V, (Note 4, 5)
V
DS
= 60V, V
GS
= 10 V
I
D
= 48A, (Note 4, 5)
140
35
45
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QW-R502-089,A
70N06
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
V
SD
I
S
= 70A, V
GS
= 0 V
Integral Reverse p-n Junction Diode in
the MOSFET
Continuous Source Current
I
S
D
MOSFET
TYP
MAX UNIT
1.4
70
A
V
Pulsed Source Current
I
SM
G
S
280
Reverse Recovery Time
t
RR
I
S
= 70A, V
GS
= 0 V
dI
F
/ dt = 100 A/µs
Reverse Recovery Charge
Q
RR
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, I
AS
=70A, R
G
=20Ω, Starting T
J
=25℃
3. I
SD
≤48A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
90
300
ns
µC
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QW-R502-089,A
70N06
TEST CIRCUITS AND WAVEFORMS
MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-089,A
70N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
Pulse Width
≤
1μs
Duty Factor
≤0.1%
D.U.T.
V
GS
10%
t
D(ON )
t
R
t
D (OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
G
V
DD
D.U.T.
10V
t
p
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-089,A
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