BFP540F
NPN Silicon RF Transistor
•
For highest gain low noise amplifier
at 1.8 GHz
•
Outstanding
G
ms
= 20 dB
Noise Figure
F
= 0.9 dB
•
Gold metallization for high reliability
•
SIEGET
to p v ie w
4
3
3
4
XYs
2
1
TSFP-4
45 - Line
A T s
1
2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP540F
Marking
ATs*
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
TSFP-4
*
Pin configuration fixed relative to marking (see package picture)
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
80°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
Symbol
R
thJS
Value
≤
280
Unit
K/W
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
4.5
14
14
1
80
8
250
150
-65 ... 150
-65 ... 150
mW
°C
mA
Unit
V
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Jan-28-2004
BFP540F
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 14 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 3.5 V
h
FE
50
110
200
-
I
EBO
-
-
10
µA
I
CBO
-
-
100
nA
I
CES
-
-
10
µA
V
(BR)CEO
4.5
5
-
V
typ.
max.
Unit
2
Jan-28-2004
BFP540F
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 50 mA,
V
CE
= 4 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 5 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 2 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
Power gain, maximum available
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 3 GHz
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB Compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |
S
21e
/
S
12e
|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
21
-
-
-
30
0.14
0.3
0.6
-
0.24
-
-
GHz
pF
C
cb
C
ce
C
eb
F
dB
-
-
0.9
1.3
1.4
-
G
ma
-
-
|S
21e
|
2
15.5
-
IP
3
-
18
13
24.5
-
-
-
dBm
20
14.5
-
-
dB
P
-1dB
-
11
-
3
Jan-28-2004
BFP540F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
82.84
28.383
3.19
19.705
1.172
1.3
1.8063
6.76
1
0.81969
2.324
0
3
aA
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
107.5
0.48731
5.5
0.02
5.4
0.31111
0.8051
0.4219
0
0.30232
0
0
0.73234
-
A
-
A
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1
11.15
1
19.237
0.72983
4
0.46576
0.23794
234
0.3
0.75
1.11
300
-
fA
-
aA
mA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
BC
=
C
CE
=
K
BO-EO
=
K
BO-CO
=
K
EO-CO
=
K
CI-EI
=
K
BI-CI
=
K
EI-CI
=
R
LBI
=
R
LEI
=
R
LCI
=
0.42
0.22
0.26
0.28
0.35
0.22
34
2
33
0.1
0.01
0.11
-0.05
-0.08
0.2
0.15
0.11
0.13
nH
nH
nH
nH
pH
nH
fF
fF
fF
-
-
-
-
-
-
Ω
Ω
Ω
The TSFP-4 package has two emitter leads. To avoid high
complexity of the package equivalent circuit, both lead are
combined in on electrical connection.
R
LxI
are series resistors
for the inductance
L
xI
and
K
xa-yb
are the coupling coefficients
between the inductance
L
xa
and
L
yb
. The referencepins for
the couple ports are B, E, C, B´, E`, C´.
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
4
Jan-28-2004
BFP540F
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(
t
p
)
300
10
3
mW
K/W
200
R
thJS
P
TOT
150
10
2
100
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
50
0
0
15
30
45
60
75
90 105 120
°C
150
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ(
V
CB
)
f
= 1MHz
0.3
P
totmax
/
P
totDC
pF
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
C
CB
10
0 -7
10
-6
-5
-4
-3
-2
0.2
0.15
0.1
0.05
10
10
10
10
10
s
10
0
0
0
2
4
6
8
10
V
14
t
p
V
CB
5
Jan-28-2004
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