BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using
Nexperia
High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use
in automotive critical applications.
1.2 Features and benefits
175
°C
rated
Suitable for standard level gate drive
sources
Q101 compliant
Suitable for thermally demanding
environments due to 175
°C
rating
1.3 Applications
12 V loads
Automotive ABS systems
Fuel pump and injection
Air bag
Automotive transmission control
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Q
GD
Quick reference
Parameter
drain-source voltage
drain current
total power dissipation
gate-drain charge
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
V
GS
= 10 V; T
mb
= 25
°C;
see
Figure 1
and
4
T
mb
= 25
°C;
see
Figure 2
I
D
= 10 A; V
DS
= 32 V;
V
GS
= 10 V; see
Figure 14
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
°C;
see
Figure 13
and
12
I
D
= 58 A; V
sup
≤
40 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25
°C;
unclamped
Min
-
-
-
-
Typ
-
-
-
5
Max
40
58
85
-
Unit
V
A
W
nC
Dynamic characteristics
Static characteristics
R
DSon
drain-source on-state
resistance
-
11
13
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
85
mJ
Nexperia
BUK7Y13-40B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1, 2, 3
4
mb
Pinning
Symbol
S
G
D
Description
source
gate
mounting base;
connected to drain
1 2 3 4
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7Y13-40B
LFPAK
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
SOT669
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
I
D
= 58 A; V
sup
≤
40 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25
°C;
unclamped
see
Figure 3
[1][2]
[3]
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
R
GS
= 20 kΩ
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 1
and
4
T
mb
= 175
°C;
V
GS
= 10 V; see
Figure 1
T
mb
= 25
°C;
t
p
≤
10
μs;
pulsed; see
Figure 4
T
mb
= 25
°C;
see
Figure 2
Min
-
-
20
-
-
-
-
-55
-55
-
Max
40
40
20
58
41
234
85
175
175
85
Unit
V
V
V
A
A
A
W
°C
°C
mJ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
E
DS(AL)R
repetitive drain-source
avalanche energy
Source-drain diode
I
S
I
SM
[1]
[2]
[3]
-
-
J
source current
peak source current
T
mb
= 25
°C
t
p
≤
10
μs;
pulsed; T
mb
= 25
°C
-
-
58
234
A
A
Single-pulse avalanche rating limited by maximum junction temperature of 175
°C.
Repetitive avalanche rating limited by an average junction temperature of 170
°C.
Refer to application note AN10273 for further information.
©
BUK7Y13-40B_3
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 26 May 2008
2 of 12
Nexperia
BUK7Y13-40B
N-channel TrenchMOS standard level FET
60
I
D
(A)
40
003aab217
120
P
der
(%)
80
03na19
20
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
P
tot
P
tot
(25°C )
200
V
GS
10V
P
der
=
× 100 %
Fig 1. Continuous drain current as a function of
mounting base temperature
10
2
I
AL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aab220
(1)
(2)
(3)
1
10
-1
10
-3
10
-2
10
-1
1 t (ms) 10
AL
(1) Single pulse;T
j
= 25
°C.
(2) Single pulse;T
j
= 150
°C.
(3) Repetitive.
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
BUK7Y13-40B_3
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 26 May 2008
3 of 12
Nexperia
BUK7Y13-40B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
003aab218
t
p
= 10
µs
100
µs
10
DC
1
1 ms
10 ms
100 ms
10
−1
1
10
V
DS
(V)
10
2
T
mb
= 25
°C; I
DM
is single pulse
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
see
Figure 5
Min
-
Typ
-
Max
1.8
Unit
K/W
10
Z
th (j-mb)
(K/W)
1
03nm01
δ
= 0.5
0.2
0.1
10
-1
P
δ
=
0.05
0.02
t
p
t
p
T
t
T
10
-2
10
-6
single shot
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y13-40B_3
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 26 May 2008
4 of 12
Nexperia
BUK7Y13-40B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
Conditions
I
D
= 250
μA;
V
GS
= 0 V;
T
j
= 25
°C
I
D
= 250
μA;
V
GS
= 0 V;
T
j
= -55
°C
V
GS(th)
gate-source threshold I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25
°C;
voltage
see
Figure 10
and
11
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= -55
°C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= 175
°C;
see
Figure 10
I
DSS
drain leakage current
V
DS
= 40 V; V
GS
= 0 V;
T
j
= 175
°C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25
°C
I
GSS
gate leakage current
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25
°C
V
DS
= 0 V; V
GS
= -20 V;
T
j
= 25
°C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175
°C;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°C;
see
Figure 13
and
12
Source-drain diode
V
SD
t
rr
Q
r
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
source-drain voltage
I
S
= 25 A; V
GS
= 25 V; T
j
= 25
°C;
see
Figure 16
-
-
-
-
-
-
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz; T
j
= 25
°C;
see
Figure 15
-
-
-
-
-
-
-
0.85
41
22
19
6
5
983
280
138
9
25
35
27
1.2
-
-
-
-
-
1311
336
189
-
-
-
-
V
ns
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Min
40
36
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.02
2
2
-
11
Max
-
-
4
4.4
-
500
1
100
100
25
13
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
mΩ
Static characteristics
reverse recovery time I
S
= 20 A; dI
S
/dt = 100 A/μs;
V
GS
= 0 V; V
DS
= 30 V
recovered charge
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
I
D
= 10 A; V
DS
= 32 V;
V
GS
= 10 V; see
Figure 14
Dynamic characteristics
V
DS
= 30 V; R
L
= 2.5
Ω;
V
GS
= 10 V; R
G(ext)
= 10
Ω
BUK7Y13-40B_3
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 26 May 2008
5 of 12
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