RS3E095BN
Nch 30V 9.5A Middle Power MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
30V
14.6mΩ
±9.5A
2.0W
SOP8
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Inner circuit
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Features
1) Low on - resistance.
2) Small surface mount package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
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Packaging specifications
Packing
Reel size (mm)
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Application
Embossed
Tape
330
12
2500
TB
RS3E095BN
Value
30
±9.5
±36
±20
9.5
12.9
2.0
1.4
150
-55 to +150
Unit
V
A
A
V
A
mJ
W
W
℃
℃
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Switching
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
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© 2016 ROHM Co., Ltd. All rights reserved.
Symbol
V
DSS
I
D
I
DP*1
V
GSS
I
AS*2
E
AS*2
P
D*3
P
D*4
T
j
T
stg
1/11
20160316 - Rev.000
RS3E095BN
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Thermal resistance
Datasheet
Parameter
Symbol
R
thJA*3
R
thJA*4
Values
Min.
-
-
Typ.
-
-
Max.
62.5
89.2
Unit
℃
/W
℃
/W
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
30
-
-
-
1.0
-
-
-
-
6.5
Typ.
-
21
-
-
-
-3
11.9
17.5
3.6
-
Max.
-
-
1
100
2.5
-
14.6
21.9
-
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
nA
V
mV/
℃
mΩ
Ω
S
I
DSS
I
GSS
V
GS(th)
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
R
DS(on)*5
R
G
|Y
fs
|
*5
V
GS
= 10V, I
D
= 9.5A
V
GS
= 4.5V, I
D
= 9.5A
f = 1MHz, open drain
V
DS
= 5V, I
D
= 9.5A
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 L
⋍
0.2mH, V
DD
= 15V, R
G
= 25Ω, STARTING T
j
= 25
℃
Fig.3-1,3-2
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160316 - Rev.000
RS3E095BN
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*5
t
r*5
t
d(off)*5
t
f*5
Conditions
V
GS
= 0V
V
DS
= 15V
f = 1MHz
V
DD
⋍
15V,V
GS
= 10V
Values
Min.
-
-
-
-
-
-
-
Typ.
680
110
90
8
19
33
7
Max.
-
-
-
-
-
-
-
Unit
pF
I
D
= 4.75A
R
L
⋍
3.2Ω
R
G
= 10Ω
ns
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Gate charge characteristics
(T
a
= 25°C)
Parameter
Symbol
Q
g*5
Q
gs
*5
Conditions
V
GS
= 10V
Values
Min.
-
-
-
-
Typ.
16.3
8.3
3.3
3.0
Max.
-
-
-
-
Unit
Total gate charge
Gate - Source charge
Gate - Drain charge
V
DD
⋍
15V
I
D
= 9.5A
nC
V
GS
= 4.5V
Q
gd*5
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*5
Conditions
T
a
= 25
℃
V
GS
= 0V, I
S
= 1.67A
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.67
36
1.2
Unit
A
A
V
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
3/11
20160316 - Rev.000
RS3E095BN
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
4/11
20160316 - Rev.000
RS3E095BN
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
20160316 - Rev.000
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