d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 71 °C/W for channel-1 and 69 °C/W for channel-2
g. T
C
= 25 °C
S17-0249-Rev. A, 20-Feb-17
Document Number: 68128
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ346DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -20 V
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 14.4 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 13 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 14.4 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 5 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 14.4 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 14.4 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 5 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 14.4 A
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
MIN.
30
30
-
-
-
-
1.1
1.2
-
-
-
-
-
-
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.3
TYP.
-
-
31
20
-4.9
-5.6
-
-
-
-
-
-
-
-
-
-
0.0230
0.0084
0.0300
0.0111
17
17
325
650
66
236
33
20
0.1
0.03
6.6
10
3.2
4.5
1
2.1
1.2
0.7
1.5
6.6
0.85
1.4
MAX.
-
-
-
-
-
-
2.2
2.4
± 100
± 100
1
1
5
5
-
-
0.0285
0.0115
0.0370
0.0153
-
-
-
-
-
-
-
-
0.2
0.06
10
20
5
9
-
-
-
-
-
-
1.7
2.8
nC
pF
S
A
μA
V
nA
mV/°C
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
Temperature coefficient
V
GS(th)
Temperature coefficient
Gate threshold voltage
Gate source leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
Zero gate voltage drain current
I
DSS
On-state drain current
b
I
D(on)
Drain-source on-state resistance
b
R
DS(on)
Forward transconductance
b
Dynamic
a
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
g
fs
C
iss
C
oss
C
rss
Total gate charge
Q
g
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Q
gs
Q
gd
Q
oss
R
g
S17-0249-Rev. A, 20-Feb-17
Document Number: 68128
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ346DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 5 A, V
GS
= 0 V
I
S
= 10 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 5 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
7
8
40
15
7
17
8
7
14
15
53
50
10
16
30
10
-
-
-
-
0.87
0.8
20
20
15
10
13
12.5
7
7.5
MAX.
15
16
80
30
15
35
20
15
30
30
100
100
20
30
60
20
13.4
13.9
25
100
1.2
1.2
40
40
30
20
-
-
-
-
ns
V
ns
nC
A
ns
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width
300 μs, duty cycle
2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0249-Rev. A, 20-Feb-17
Document Number: 68128
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ346DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
25
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
25
10000
20
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
15
2nd line
I
D
- Drain Current (A)
20
1000
1st line
2nd line
T
C
= 25 °C
15
10
100
5
V
GS
= 3 V
10
100
5
T
C
= 125 °C
T
C
= -55 °C
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.05
10000
500
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.04
V
GS
= 4.5 V
400
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
C
iss
1000
1st line
2nd line
100
0.03
300
0.02
V
GS
= 10 V
200
C
oss
C
rss
100
0.01
100
0
0
5
10
15
20
25
I
D
- Drain Current (A)
2nd line
10
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 5 A
V
DS
= 15 V
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 5 A
10000
1.8
1.6
V
GS
= 10 V, 4.5 V
8
1st line
2nd line
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
100
V
DS
= 7.5 V
4
100
2
0
0
2
4
6
8
Q
g
- Total Gate Charge (nC)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S17-0249-Rev. A, 20-Feb-17
Document Number: 68128
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
6
V
DS
= 24 V
1000
1000
SiZ346DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.12
I
D
= 5 A
Vishay Siliconix
Axis Title
10000
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.10
0.08
0.06
T
J
= 125 °C
10
T
J
= 25 °C
1000
1st line
2nd line
1000
1st line
2nd line
100
T
J
= 25 °C
1
100
0.04
0.02
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.2
2.0
2nd line
V
GS(th)
(V)
1.8
1.6
1.4
1.2
1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
I
D
= 250 μA
Axis Title
10000
50
10000
40
1000
2nd line
Power (W)
1st line
2nd line
30
1000
1st line
2nd line
100
10
0.01
0.1
1
Time (s)
2nd line
10
100
10
1000
20
100
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
R
DS(on)
Limited
(1)
I
D(on)
Limited
100 μs
1 ms
I
DM
Limited
10000
2nd line
I
D
- Drain Current (A)
10
1000
1st line
2nd line
100
10
1
10 ms
100 ms
1s
10 s
DC
BVDSSLimited
0.1
T
A
= 25 °C
Single pulse
0.01
0.1
(1)
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-0249-Rev. A, 20-Feb-17
Document Number: 68128
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
与云数据库相比，小型计算机是专门为网络边缘的去中心化坚固计算而构建的。通过将应用程序、分析和处理服务移动到更靠近数据生成源的位置，业务运营可以获得改进的实时计算应用程序性能。 l 从奔腾到酷睿i5的可扩展CPU性能 l 智能电源点火管理和CAN总线网络支持 l 无线局域网和广域网LTE连接 l 丰富的I/O可扩展性，包括PoE、PCI、PCIe、COM l 适用于宽工作温度和宽电压输入的坚固...[详细]
C++ 属于面向对象的编程语言，OOP的思想不必多说，特别对于复杂的软件工程来说，利用OOP绝对是事半功倍，相对于传统的C来说； 当然用C来写单片机程序无可厚非，已经延续了一个传统，从大学时学的开始到工作岗位，好多人都是一直用C来做，但是既然Keil支持C++编译， 可以用C++来编写你的代码，可以利用高级语言来结构化，清晰化你的程序，为嘛不用呢！哈哈，个人看法！下面进入正题： C+...[详细]
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