BUK7277-55A
12 June 2014
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
•
•
•
•
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
•
•
•
12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2; Fig. 3
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12; Fig. 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 6 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
36
mJ
-
65
77
mΩ
Min
-
-
-
Typ
-
-
-
Max
55
18
51
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
-
154
mΩ
Nexperia
BUK7277-55A
N-channel TrenchMOS standard level FET
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
Simplified outline
mb
Graphic symbol
D
G
mbb076
S
DPAK (SOT428)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK7277-55A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
7. Marking
Table 4.
Marking codes
Marking code
BUK7277-55A
Type number
BUK7277-55A
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
T
mb
= 100 °C; V
GS
= 10 V;
Fig. 2
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 2; Fig. 3
I
DM
T
stg
T
j
BUK7277-55A
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
[1]
Max
55
55
20
51
13
18
73
175
175
Unit
V
V
V
W
A
A
A
°C
°C
2 / 12
peak drain current
storage temperature
junction temperature
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
-
-55
-55
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 June 2014
Nexperia
BUK7277-55A
N-channel TrenchMOS standard level FET
Symbol
I
S
I
SM
E
DS(AL)S
Parameter
source current
peak source current
Conditions
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 6 A; V
sup
≤ 55 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
Min
-
-
Max
18
73
Unit
A
A
Source-drain diode
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[1]
120
P
der
(%)
80
-
36
mJ
Peak drain current is limited by chip, not package.
03aa16
120
I
der
(%)
80
03aa24
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
D
(A)
10
2
R
DSon
= V
DS
/I
D
03nc57
t
p
= 10 µs
10
P
1
t
p
10
- 1
1
t
T
10
V
DS
(V)
10
2
δ=
t
p
T
D.C.
100 µs
1 ms
10 ms
100 ms
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7277-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 June 2014
3 / 12
Nexperia
BUK7277-55A
N-channel TrenchMOS standard level FET
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10
- 1
0.02
Single Shot
t
p
10
- 2
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
t
p
(s)
1
P
δ=
t
p
T
Conditions
Fig. 4
Min
-
Typ
-
Max
2.9
Unit
K/W
R
th(j-a)
minimum footprint; FR4 board
-
71.4
-
K/W
03nc56
10
- 1
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 11
I
DSS
drain leakage current
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
BUK7277-55A
All information provided in this document is subject to legal disclaimers.
Min
55
50
2
-
1
-
-
Typ
-
-
3
-
-
0.05
-
©
Max
-
-
4
4.4
-
10
500
Unit
V
V
V
V
V
µA
µA
Static characteristics
V
GS(th)
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 June 2014
4 / 12
Nexperia
BUK7277-55A
N-channel TrenchMOS standard level FET
Symbol
I
GSS
Parameter
gate leakage current
Conditions
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
Min
-
-
-
-
Typ
2
2
-
65
Max
100
100
154
77
Unit
nA
nA
mΩ
mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
Fig. 12; Fig. 13
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 12; Fig. 13
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
measured from drain lead from
package to centre of die; T
j
= 25 °C
measured from source lead from
package to source bond pad; T
j
= 25 °C
I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C;
Fig. 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 10 Ω; T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C;
Fig. 14
-
-
-
-
-
-
-
-
-
316
92
64
10
50
70
40
2.5
7.5
422
110
87
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
Source-drain diode
V
SD
t
rr
Q
r
source-drain voltage
reverse recovery time
recovered charge
-
-
-
0.85
32
120
1.2
-
-
V
ns
nC
BUK7277-55A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
12 June 2014
5 / 12
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