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MT3S111(TE85L,F)

产品描述RF SIGE HETEROJUNCTION BIPOLAR N
产品类别半导体    分立半导体   
文件大小348KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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MT3S111(TE85L,F)概述

RF SIGE HETEROJUNCTION BIPOLAR N

MT3S111(TE85L,F)规格参数

参数名称属性值
晶体管类型NPN
电压 - 集射极击穿(最大值)6V
频率 - 跃迁11.5GHz
噪声系数(dB,不同 f 时的典型值)1.2dB @ 1GHz
增益12dB
功率 - 最大值700mW
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)200 @ 30mA,5V
电流 - 集电极(Ic)(最大值)100mA
工作温度150°C(TJ)
安装类型表面贴装
封装/外壳TO-236-3,SC-59,SOT-23-3
供应商器件封装S-Mini

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MT3S111
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz)
High Gain:|S
21e
| =12 dB (typ.) (@ f=1 GHz)
2
Unit: mm
Marking
R5
1.
2.
3.
Base
Emitter
Collector
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CES
V
CEO
V
EBO
I
C
I
B
P
C
P
C
(Note 1)
T
j
T
stg
Rating
13
6
0.6
100
10
160
700
150
−55
to 150
Unit
V
V
V
mA
mA
mW
mW
°C
°C
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
2007-12
1
2014-09-26

 
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