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IS43R86400D-4TL: 产品描述DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66; 产品类别存储; 文件大小987KB，共34页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS43R86400D-4TL概述

DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66

IS43R86400D-4TL规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2,
针数	66
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.7 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G66
JESD-609代码	e3
长度	22.22 mm
内存密度	536870912 bit
内存集成电路类型	DDR DRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	66
字数	67108864 words
字数代码	64000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64MX8
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.2 mm
自我刷新	YES
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
宽度	10.16 mm
Base Number Matches	1

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IS43/46R86400D

IS43/46R16320D, IS43/46R32160D

16Mx32, 32Mx16, 64Mx8

512Mb DDR SDRAM

FEATURES

•

VDD and VDDQ: 2.5V ± 0.2V (-5, -6)

VDD and VDDQ: 2.5V ± 0.1V (-4)

SSTL_2 compatible I/O

Double-data rate architecture; two data transfers

per clock cycle

Bidirectional, data strobe (DQS) is transmitted/

received with data, to be used in capturing data

at the receiver

DQS is edge-aligned with data for READs and

centre-aligned with data for WRITEs

Differential clock inputs (CK and CK)

DLL aligns DQ and DQS transitions with CK

transitions

Commands entered on each positive CK edge;

data and data mask referenced to both edges of

DQS

Four internal banks for concurrent operation

Data Mask for write data. DM masks write data

at both rising and falling edges of data strobe

Burst Length: 2, 4 and 8

Burst Type: Sequential and Interleave mode

Programmable CAS latency: 2, 2.5 and 3

Auto Refresh and Self Refresh Modes

Auto Precharge

PRELIMINARY INFORMATION

SEPTEMBER 2010

DEVICE OVERVIEW

ISSI’s 512-Mbit DDR SDRAM achieves high speed data

transfer using pipeline architecture and two data word

accesses per clock cycle. The 536,870,912-bit memory

array is internally organized as four banks of 128Mb to

allow concurrent operations. The pipeline allows Read

and Write burst accesses to be virtually continuous, with

the option to concatenate or truncate the bursts. The

programmable features of burst length, burst sequence

and CAS latency enable further advantages. The device

is available in 8-bit, 16-bit and 32-bit data word size

Input data is registered on the I/O pins on both edges

of Data Strobe signal(s), while output data is referenced

to both edges of Data Strobe and both edges of CLK.

Commands are registered on the positive edges of CLK.

An Auto Refresh mode is provided, along with a Self

Refresh mode. All I/Os are SSTL_2 compatible.

ADDRESS TABLE

Parameter

Configuration

16M x 32

4M x 32 x 4

banks

32M x 16

8M x 16 x 4

banks

BA0, BA1

A10/AP

64M x 8

16M x 8 x 4

banks

BA0, BA1

A10/AP

Bank Address BA0, BA1

Pins

Autoprecharge A8/AP

Pins

Row Address

Column

Address

8K(A0 – A12)

512(A0 – A7,

A9)

8K(A0 – A12) 8K(A0 – A12)

1K(A0 – A9)

8K / 64ms

8K / 16ms

2K(A0 – A9,

A11)

8K / 64ms

8K / 16ms

OPTIONS

• Configuration(s): 16Mx32, 32Mx16, and 64Mx8

• Package(s): 144 Ball BGA (x32), 66-pin TSOP-II

(x8, x16), and 60 Ball BGA (x8, x16)

• Lead-free package

• Temperature Range:

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)

Automotive, A1 (-40°C to +85°C)

Automotive, A2 (-40°C to +105°C)

Refresh Count

Com./Ind./A1 8K / 64ms

8K / 16ms

KEY TIMING PARAMETERS

Speed Grade

-4

-5

x8, x16 only

Max CL = 3

250 200

Max CL = 2.5

–

167

Max CL = 2

–

133

-6

Units

MHz

167

133

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can rea-

sonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applica-

tions unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. 00B

08/13/10

IS43R86400D-4TL相似产品对比

	IS43R86400D-4TL	IS43R86400D-4BL
描述	DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66	DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 13 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-60
是否无铅	不含铅	不含铅
是否Rohs认证	符合	符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2	BGA
包装说明	TSOP2,	TBGA,
针数	66	60
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	0.7 ns	0.7 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G66	R-PBGA-B60
JESD-609代码	e3	e1
长度	22.22 mm	13 mm
内存密度	536870912 bit	536870912 bit
内存集成电路类型	DDR DRAM	DDR DRAM
内存宽度	8	8
功能数量	1	1
端口数量	1	1
端子数量	66	60
字数	67108864 words	67108864 words
字数代码	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C
组织	64MX8	64MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TBGA
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE
峰值回流温度（摄氏度）	260	260
认证状态	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm
自我刷新	YES	YES
最大供电电压 (Vsup)	2.6 V	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V
表面贴装	YES	YES
技术	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL
端子面层	Matte Tin (Sn)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	GULL WING	BALL
端子节距	0.65 mm	1 mm
端子位置	DUAL	BOTTOM
处于峰值回流温度下的最长时间	40	40
宽度	10.16 mm	8 mm

IS43R86400D-4TL

IS43R86400D-4TL概述

IS43R86400D-4TL规格参数

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