4
HS3AB - HS3MB
Taiwan Semiconductor
3A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
●
●
●
●
●
●
●
●
Low power loss, high efficiency
Low forward voltage drop
Low profile package
Fast switching for high efficiency
Ideal for automated placement
Glass passivated junction chip
Fast switching for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
3
50 - 1000
100
150
Signal Die
UNIT
A
V
A
°C
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Monitor
TV
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.093 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on
rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
HS
HS
50
35
50
HS
HS
100
70
100
HS
HS
200
140
200
HS
HS
300
210
300
3
100
- 55 to +150
- 55 to +150
HS
HS
400
280
400
HS
HS
600
420
600
HS
HS
HS
HS
V
V
V
A
A
°C
°C
3AB 3BB 3DB 3FB 3GB 3JB 3KB 3MB
3AB 3BB 3DB 3FB 3GB 3JB
3KB 3MB
800 1000
560
700
800 1000
UNIT
1
Version:K1701
4
HS3AB - HS3MB
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
60
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
HS3AB
HS3BB
HS3DB
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
MAX
UNIT
V
V
V
V
V
V
V
V
μA
μA
pF
pF
pF
pF
pF
pF
pF
pF
ns
ns
-
I
F
= 3A,T
J
= 25°C
V
F
1.0
HS3FB
HS3GB
HS3JB
HS3KB
HS3MB
T
J
=25°C
T
J
= 100°C
HS3AB
HS3BB
HS3DB
80
1 MHz, V
R
=4V
C
J
HS3FB
HS3GB
HS3JB
HS3KB
HS3MB
HS3AB
HS3BB
HS3DB
-
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
50
HS3FB
HS3GB
HS3JB
HS3KB
HS3MB
-
75
50
I
R
I
R
-
1.7
10
250
-
-
-
-
-
-
-
-
-
1.3
Reverse current @ rated V
R
per diode
(2)
-
-
Junction capacitance
ns
ns
ns
ns
ns
ns
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:K1701
4
HS3AB - HS3MB
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
3.5
AVERAGE FORWARD CURRENT (A)
175
150
CAPACITANCE (pF)
125
100
75
50
25
0
HS3JB-HS3MB
Fig2. Typical Junction Capacitance
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE (
°
C)
RESISTIVE OR
INDUCTIVE LOAD
HS3AB-HS3GB
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100 10
Fig4. Typical Forward Characteristics
100
T
J
=125°
1
10
0.1
UF1DLW
T
J
=125°C
HS3AB-HS3DB
T
J
=25°C
(A)
10
T
J
=25°C
1
0.01
1
HS3GB
Pulse width
0.001
0.1
0
0.3
0.4
0.2
0.4
0.5
0.6
0.6
0.8
0.7
1
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.8
HS3JB-HS3MB
1.1
0.9
1
1.2
1.4
1.6
1.8
1.2
FORWARD VOLTAGE (V)
4
Version:K1701
4
HS3AB - HS3MB
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
150
PEAK FORWARD SURGE URRENT(A)
8.3ms Single Half Sine Wave
100
50
0
1
10
100
1000
NUMBER OF CYCLES AT 60 Hz
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:K1701
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