Datasheet> 器件分类 > 存储> IS62WV25616CLL-55B2

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IS62WV25616CLL-55B2: 产品描述Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48; 产品类别存储; 文件大小88KB，共13页; 制造商Integrated Silicon Solution ( ISSI )

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IS62WV25616CLL-55B2概述

Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS62WV25616CLL-55B2规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	BGA
包装说明	LFBGA,
针数	48
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
Is Samacsys	N
最长访问时间	55 ns
JESD-30 代码	R-PBGA-B48
JESD-609代码	e0
长度	8 mm
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	16
功能数量	1
端子数量	48
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX16
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
座面最大高度	1.35 mm
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.5 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	6 mm
Base Number Matches	1

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IS62WV25616CLL

256K x 16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC SRAM

FEATURES

• High-speed access time: 55ns, 70ns

• CMOS low power operation

– 1.5 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

– 2.5V--3.6V V

(62WV25616CLL)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• 2CS Option Available

ISSI

MARCH 2003

DESCRIPTION

The

ISSI

IS62WV25616CLL are high-speed, low power, 4M

bit SRAMs organized as 256K words by 16 bits. It is

fabricated using

ISSI

's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit

design techniques, yields high-performance and low power

consumption devices.

When

CS1

is HIGH (deselected) or when CS2 is LOW

(deselected) or when

CS1

is LOW, CS2 is HIGH and both

and

are HIGH, the device assumes a standby mode

at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE)

controls both writing and reading of the memory. A

data byte allows Upper Byte

(UB)

and Lower Byte (LB)

access.

The IS62WV25616CLL are packaged in the JEDEC standard

48-pin mini BGA (6mm x 8mm). 48-pin mini BGA is

available both in 1CS and 2CS options.

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CS2

CS1

CONTROL

CIRCUIT

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. C

03/13/03

IS62WV25616CLL-55B2相似产品对比

	IS62WV25616CLL-55B2	IS62WV25616CLL-55B2I	IS62WV25616CLL-70B2I	IS62WV25616CLL-70BI
描述	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
是否Rohs认证	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	BGA	BGA	BGA	BGA
包装说明	LFBGA,	LFBGA,	6 X 8 MM, MINI, BGA-48	6 X 8 MM, MINI, BGA-48
针数	48	48	48	48
Reach Compliance Code	not_compliant	not_compliant	unknown	unknown
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	55 ns	55 ns	70 ns	70 ns
JESD-30 代码	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
JESD-609代码	e0	e0	e0	e0
长度	8 mm	8 mm	8 mm	8 mm
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	16	16	16	16
功能数量	1	1	1	1
端子数量	48	48	48	48
字数	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	85 °C	85 °C	85 °C
最低工作温度	-	-40 °C	-40 °C	-40 °C
组织	256KX16	256KX16	256KX16	256KX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.35 mm	1.35 mm	1.35 mm	1.35 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	BALL	BALL
端子节距	0.75 mm	0.75 mm	0.75 mm	0.75 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	6 mm	6 mm	6 mm	6 mm

IS62WV25616CLL-55B2

IS62WV25616CLL-55B2概述

IS62WV25616CLL-55B2规格参数

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