BFG424F
NPN 25 GHz wideband transistor
Rev. 2 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
1.3 Applications
Radio Frequency (RF) front end wideband applications such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVison (SATV) tuners
high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
Table 1.
Symbol
V
CBO
V
CEO
I
C
P
tot
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
T
sp
90
C
[1]
Conditions
open emitter
open base
Min
-
-
-
-
Typ
-
-
25
-
Max
10
4.5
30
135
Unit
V
V
mA
mW
NXP Semiconductors
BFG424F
NPN 25 GHz wideband transistor
Quick reference data
…continued
Parameter
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
Conditions
I
C
= 25 mA; V
CE
= 2 V;
T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 2 mA; V
CE
= 2 V;
f = 2 GHz;
S
=
opt
[2]
Table 1.
Symbol
h
FE
C
CBS
f
T
G
p(max)
NF
Min
50
-
-
-
-
Typ
80
102
25
23
1.2
Max
120
-
-
-
-
Unit
fF
GHz
dB
dB
[1]
[2]
T
sp
is the temperature at the soldering point of the emitter pins.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG), see
Figure 8.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BFG424F
-
Description
plastic surface mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
4. Marking
Table 4.
BFG424F
[1]
* = p: made in Hong Kong.
Marking
Marking code
[1]
NE*
Type number
BFG424F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 13 September 2011
2 of 14
NXP Semiconductors
BFG424F
NPN 25 GHz wideband transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
90
C
[1]
Min
-
-
-
-
-
65
-
Max
10
4.5
1
30
135
+150
150
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the soldering point of the emitter pins.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
T
sp
90
C
[1]
Typ
340
Unit
K/W
T
sp
is the temperature at the soldering point of the emitter pins.
200
P
tot
(mW)
150
001aad817
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1.
Power derating curve
BFG424F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 13 September 2011
3 of 14
NXP Semiconductors
BFG424F
NPN 25 GHz wideband transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
(BR)CBO
collector-base
breakdown voltage
V
(BR)CEO
collector-emitter
breakdown voltage
V
(BR)EBO
open-collector
emitter-base
breakdown voltage
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
s
21
2
NF
collector-base
cut-off current
DC current gain
collector-emitter
capacitance
emitter-base
capacitance
collector-base
capacitance
Conditions
I
C
= 2.5
A;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 2.5
A;
I
C
= 0 mA
Min
10
4.5
1
Typ
-
-
-
Max
-
-
-
Unit
V
V
V
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 25 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
-
50
-
-
-
-
[1]
-
80
363
475
102
25
23
18.5
0.8
1.2
12
15
120
-
-
-
-
-
-
-
-
-
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dBm
transition frequency I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C
maximum power
gain
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C
-
-
-
-
insertion power gain I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C
noise figure
I
C
= 2 mA; V
CE
= 2 V;
f = 900 MHz;
S
=
opt
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
P
L(1dB)
output power at
1 dB gain
compression
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S(opt)
; Z
L
= Z
L(opt)
[2]
-
IP3
[1]
[2]
third-order intercept I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
point
Z
S
= Z
S(opt)
; Z
L
= Z
L(opt)
[2]
-
22
-
dBm
G
p(max)
is the maximum power gain, if K
1. If K
1 then G
p(max)
= MSG, see
Figure 8.
Z
S
is optimized for noise; Z
L
is optimized for gain.
BFG424F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 13 September 2011
4 of 14
NXP Semiconductors
BFG424F
NPN 25 GHz wideband transistor
40
I
C
(mA)
30
001aad818
120
h
FE
001aad819
(1)
(2)
(3)
(4)
80
(1)
(2)
(3)
20
(5)
(6)
40
10
(7)
(8)
0
0
1
2
3
4
V
CE
(V)
5
0
0
10
20
30
I
C
(mA)
40
(1) I
B
= 400
A
(2) I
B
= 350
A
(3) I
B
= 300
A
(4) I
B
= 250
A
(5) I
B
= 200
A
(6) I
B
= 150
A
(7) I
B
= 100
A
(8) I
B
= 50
A
(1) V
CE
= 3 V
(2) V
CE
= 2 V
(3) V
CE
= 1 V
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
200
C
CBS
(fF)
160
Fig 3.
DC current gain as a function of collector
current; typical values
001aad820
120
80
40
0
0
1
2
3
4
V
CB
(V)
5
f = 1 MHz
Fig 4.
Collector-base capacitance as a function of collector-base voltage; typical values
BFG424F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 13 September 2011
5 of 14
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