DISCRETE SEMICONDUCTORS
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 12
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
FEATURES
High output voltage capability
High gain bandwidth product
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
V
o
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
up to T
s
= 135
C
; note 1
I
C
=
70
mA; V
CE
=
10
V;
T
amb
= 25
C
I
C
=
70
mA; V
CE
=
10
V;
f = 500 MHz; T
amb
= 25
C
I
C
=
70
mA; V
CE
=
10
V;
f = 800 MHz; T
amb
= 25
C
I
C
=
100
mA; V
CE
=
10
V;
R
L
= 75
;
T
amb
= 25
C
open base
CONDITIONS
25
MIN.
5.0
12
600
TYP.
1
Top view
BFG31
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
lfpage
4
2
3
MSB002 - 1
Fig.1 SOT223.
MAX.
15
100
1
UNIT
V
mA
W
GHz
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 135
C;
note 1
open emitter
open base
open collector
CONDITIONS
65
MIN.
MAX.
20
15
3
100
1
150
175
UNIT
V
V
V
mA
W
C
C
1995 Sep 12
2
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
cb
C
eb
C
re
f
T
G
UM
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector-base capacitance
emitter-base capacitance
feedback capacitance
transition frequency
maximum unilateral power gain; note 1
CONDITIONS
open emitter; I
C
=
10
mA
open base; I
C
=
10
mA
open collector; I
E
=
0.1
mA
I
E
= 0; V
CB
=
10
V
I
C
=
70
mA; V
CE
=
10
V;
T
amb
= 25
C
I
C
= 0; V
CB
=
10
V; f = 1 MHz;
I
C
= 0; V
EB
=
10
V; f = 1 MHz
I
C
= 0; V
CE
=
10
V; f = 1 MHz;
T
amb
= 25
C
I
C
=
70
mA; V
CE
=
10
V;
f = 500 MHz; T
amb
= 25
C
I
C
=
70
mA; V
CE
=
10
V;
f = 500 MHz; T
amb
= 25
C
I
C
=
70
mA; V
CE
=
10
V;
f = 800 MHz; T
amb
= 25
C
V
o
V
o
Notes
output voltage
output voltage
note 2
note 3
MIN.
20
18
3
25
TYP.
1.8
5
1.6
5
16
12
600
550
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 135
C;
note 1
BFG31
THERMAL RESISTANCE
40 K/W
MAX.
1
UNIT
V
V
V
A
pF
pF
pF
GHz
dB
dB
mV
mV
s
21 2
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
=
10 log -------------------------------------------------------- dB.
1
–
s
11 2
1
–
s
22 2
2. d
im
=
60
dB; I
C
=
70
mA; V
CE
=
10
V; R
L
= 75
;
T
amb
= 25
C;
V
p
= V
o
at d
im
=
60
dB; f
p
= 850.25 MHz;
V
q
= V
o
6
dB; f
q
= 858.25 MHz;
V
r
= V
o
6
dB; f
r
= 860.25 MHz;
measured at f
(p+qr)
= 848.25 MHz.
3. d
im
=
60
dB (DIN 45004B); I
C
=
70
mA; V
CE
=
10
V; R
L
= 75
;
T
amb
= 25
C;
V
p
= V
o
= at d
im
=
60
dB; f
p
= 445.25 MHz;
V
q
= V
o
6
dB; f
q
= 453.25 MHz;
V
r
= V
o
6
dB; f
r
= 455.25 MHz;
measured at f
(p+qr)
= 443.25 MHz.
1995 Sep 12
3
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB344
MBB345
handbook, halfpage
P
1.2
tot
(W)
handbook, halfpage
80
1.0
h FE
60
0.8
0.6
40
0.4
20
0.2
0
0
50
100
150
200
T s ( o C)
0
0
100
I C (mA)
200
V
CE
=
10
V; T
amb
= 25
C.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current.
MBB346
handbook, halfpage
6
handbook, halfpage
8
MBB347
C re
fT
(GHz)
5
(pF)
6
4
4
3
2
2
1
0
10
20
VCE (V)
30
0
0
50
I C (mA)
100
f = 1 MHz; T
amb
= 25
C
V
CE
=
10
V; T
amb
= 25
C.
Fig.4
Feedback capacitance as a function of
collector-emitter voltage.
Fig.5
Transition frequency as a function of
collector current.
1995 Sep 12
4
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB348
handbook, halfpage
40
d im
handbook, halfpage
50
MBB349
(dB)
45
d im
(dB)
55
50
55
60
60
65
40
60
80
I C (mA)
100
65
40
60
80
100
120
I C (mA)
V
CE
=
10
V; V
o
= 650 mV; T
amb
= 25
C;
f
(p+qr)
= 443.25 MHz.
V
CE
=
10
V; V
o
= 550 mV; T
amb
= 25
C;
f
(p+qr)
= 848.25 MHz.
Fig.6
Intermodulation distortion as a function
of collector current.
Fig.7
Intermodulation distortion as a function
of collector current.
MBB350
MBB351
handbook, halfpage
10
d2
handbook, halfpage
10
(dB)
20
d2
(dB)
20
30
30
40
40
50
50
60
10
30
50
70
90
110
I C (mA)
60
10
30
50
70
90
110
I C (mA)
V
CE
=
10
V; V
o
= 50 dBmV; T
amb
= 25
C;
f
(p+q)
= 450 MHz.
V
CE
=
10
V; V
o
= 50 dBmV; T
amb
= 25
C;
f
(p+q)
= 810 MHz.
Fig.8 Second order intermodulation distortion
as a function of collector current.
Fig.9
Second order intermodulation distortion
as a function of collector current.
1995 Sep 12
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
