DISCRETE SEMICONDUCTORS
DATA SHEET
BFG97
NPN 5 GHz wideband transistor
Product specification
September 1995
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PNP complement is the BFG31.
1
Top view
BFG97
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
age
4
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
up to T
s
= 125
C
(note 1)
I
C
= 70 mA; V
CE
= 10 V; T
j
= 25
C
I
C
= 70 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 70 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 70 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
V
o
output voltage
I
C
= 70 mA; V
CE
= 10 V;
d
im =
60
dB; R
L
= 75
;
f
(pqr)
= 793.25 MHz; T
amb
= 25
C
open base
CONDITIONS
open emitter
MIN.
25
TYP.
80
5.5
16
12
700
MAX.
20
15
100
1
GHz
dB
dB
mV
UNIT
V
V
mA
W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 125
C
(note 1)
open base
open collector
CONDITIONS
open emitter
65
MIN.
MAX.
20
15
3
100
1
150
175
UNIT
V
V
V
mA
W
C
C
September 1995
2
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 70 mA; V
CE
= 10 V
I
C
= 70 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 70 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 70 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
V
o
d
2
output voltage
second order intermodulation
distortion
note 2
note 3
note 4
note 5
MIN.
25
TYP.
80
5.5
1.5
6.5
1
16
12
750
700
56
53
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 125
C
(note 1)
BFG97
THERMAL RESISTANCE
50 K/W
MAX.
100
UNIT
nA
GHz
pF
pF
pF
dB
dB
mV
mV
dB
dB
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
---------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
2. d
im
=
60
dB (DIN 45004B); I
C
= 70 mA; V
CE
= 10 V; R
L
= 75
;
T
amb
= 25
C
V
p
= V
o
at d
im
=
60
dB;
V
q
= V
o
6
dB; f
p
= 445.25 MHz;
V
r
= V
o
6
dB; f
q
= 453.25 MHz; f
r
= 455.25 MHz;
measured at f
(pqr)
= 443.25 MHz.
3. d
im
=
60
dB (DIN 45004B); I
C
= 70 mA; V
CE
= 10 V; R
L
= 75
;
T
amb
= 25
C
V
p
= V
o
at d
im
=
60
dB;
V
q
= V
o
6
dB; f
p
= 795.25 MHz;
V
r
= V
o
6
dB; f
q
= 803.25 MHz; f
r
= 805.25 MHz;
measured at f
(pqr)
= 793.25 MHz.
4.
I
C
= 70 mA; V
CE
= 10 V; R
L
= 75
;
T
amb
= 25
C;
V
p
= V
q
= V
o
= 50 dBmV; f
(pq)
= 450 MHz; f
p
= 50 MHz; f
q
= 400 MHz.
5. I
C
= 70 mA; V
CE
= 10 V; R
L
= 75
;
T
amb
= 25
C;
V
p
= V
q
= V
o
= 50 dBmV; f
(pq)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
September 1995
3
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
handbook, full pagewidth
VBB
input
75
Ω
C2
;;;;
L2
C4
C7
L4
C3
L5
L6
C8
R1
R2
C1
L1
L3
DUT
C5
C6
R3
R4
MBB807
VCC
output
75
Ω
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
C2, C3, C7, C8
C1, C4, C6
C5 (note 1)
L1 (note 1)
L2
L3
L4, L5 (note 1)
L6
L7
R1
R2 (note 1)
R3, R4
Notes
The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (
r
= 2.2); thickness
1
16
inch;
thickness of copper sheet 2
35
m.
1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB.
DESCRIPTION
multilayer ceramic
capacitor
multilayer ceramic
capacitor
miniature ceramic plate
capacitor
0.5 turns 0.4 mm copper
wire
microstripline
microstripline
1.5 turns 0.4 mm copper
wire
microstripline
Ferroxcube choke
metal film resistor
metal film resistor
metal film resistor
75
5
H
10 k
220
30
75
75
VALUE
10 nF
1.2 pF
10 nF
int. dia. 3 mm
length 14 mm; width 2.5 mm
length 8 mm; width 2.5 mm
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm; width 2.5 mm
3122 108 20153
2322 180 73103
2322 180 73221
2322 180 73309
DIMENSIONS
CATALOGUE NO.
2222 590 08627
2222 851 12128
2222 629 08103
September 1995
4
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG97
handbook, full pagewidth
VBB
C3
VCC
C7
R1
R3
L5
L2
C4
R4
R2
L4
C5
L3
C6
L6
L7
75
Ω
input
C1
C2
L1
C8
75
Ω
output
MEA971
handbook, full pagewidth
80 mm
60 mm
MEA969
handbook, full pagewidth
80 mm
60 mm
mounting
screws
M 2.5 (8x)
MEA970
Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board.
September 1995
5
嵌入式系统
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