DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
1995 Sep 22
NXP Semiconductors
Product specification
UHF power transistor
FEATURES
High efficiency
Small size discrete power amplifier
900 MHz and 1.9 GHz operating
areas
Gold metallization ensures
excellent reliability.
APPLICATIONS
Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343N package.
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
Marking code: T5.
BFG10W/X
lfpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343N.
QUICK REFERENCE DATA
RF performance at T
amb
= 25
C
in a common-emitter test circuit.
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 4.6 ms
f
(GHz)
1.9
0.9
0.9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 102
C;
note 1
CONDITIONS
open emitter
open base
open collector
65
MIN.
MAX.
20
10
2.5
250
250
400
+150
175
V
V
V
mA
mA
mW
C
C
UNIT
V
CE
(V)
3.6
6
6
P
L
(mW)
200
650
360
G
p
(dB)
5
10
12.5
c
(%)
50
50
50
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 102
C;
note 1;
P
tot
= 400 mW
VALUE
180
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
NXP Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
C
(unless otherwise specified).
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 0.1 mA
open base; I
C
= 5 mA
open collector; I
E
= 0.1 mA
V
CE
= 6 V; V
BE
= 0
I
C
= 50 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CE
= 6 V; f = 1 MHz
MIN.
20
10
2.5
25
BFG10W/X
MAX.
100
3
2
V
V
V
UNIT
A
pF
pF
10
3
handbook, full pagewidth
Zth j-a
(K/W)
δ
=1
0.75
10
2
0.5
0.33
0.2
MBG431
10
0.1
0.05
0.02
0.01
P
δ
= T
tp
tp
T
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
handbook, halfpage
2.0
MLC819
Cc
(pF)
1.5
1.0
0.5
0
0
2
4
6
8
10
V CB (V)
Fig.3
Collector capacitance as a function of
collector-base voltage.
1995 Sep 22
4
NXP Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION
RF performance at T
amb
= 25
C
in a common-emitter test circuit.
MODE OF OPERATION
Pulsed, class-AB, duty cycle: < 1 : 2; t
p
= 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; t
p
= 5 ms
f
(GHz)
1.9
0.9
0.9
Ruggedness in class-AB operation
V
CE
(V)
3.6
6
6
P
L
(mW)
200
650
360
G
p
(dB)
BFG10W/X
c
(%)
50;
typ. 60
50
50
5;
typ. 7
10
12.5
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; t
p
= 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; t
p
= 10 ms; duty cycle of 1 : 2.
MLC820
MBG194
handbook, halfpage
10
Gp
(dB)
8
η
c
100
η
c
(%)
80
handbook, halfpage
16
80
η
c
Gp
η
c
60
(%)
Gp
(dB)
12
6
Gp
60
8
40
4
40
4
20
2
20
0
0
100
200
300
0
400
500
P L (mW)
0
0.3
20
0.5
0.7
0.9
1.1
P L (mW)
Pulsed, class-AB operation.
V
CE
= 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for P
L
= 200 mW.
Pulsed, class-AB operation.
V
CE
= 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 600 mW.
Fig.4
Power gain and efficiency as functions
of load power; typical values.
Fig.5
Power gain and efficiency as functions
of load power; typical values.
1995 Sep 22
5
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