DISCRETE SEMICONDUCTORS
DATA SHEET
BF996S
N-channel dual-gate MOS-FET
Product specification
April 1991
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
RF applications such as:
– UHF television tuners
– Professional communication equipment.
PINNING
PIN
1
2
3
4
SYMBOL
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Top view
Marking code:
MHp.
MAM039
handbook, halfpage
BF996S
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
4
3
g2
g1
d
DESCRIPTION
1
2
s,b
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
Y
fs
C
ig-1s
C
rs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
feedback capacitance
noise figure
f = 1 kHz; I
D
= 10 mA; V
DS
= 15 V; V
G2S
= 4 V
up to T
amb
= 60
C
CONDITIONS
18
TYP.
MAX.
20
30
200
150
2.6
UNIT
V
mA
mW
C
mS
pF
fF
dB
input capacitance at gate 1 f = 1 MHz; I
D
= 10 mA; V
DS
= 15 V; V
G2S
= 4 V 2.3
f = 1 MHz; I
D
= 10 mA; V
DS
= 15 V; V
G2S
= 4 V 25
f = 200 MHz G
S
= 2 mS; B
S
= B
Sopt
;
I
D
= 10 mA; V
DS
= 15 V; V
GS2
= 4 V
1
April 1991
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
I
D
I
D(AV)
I
G1-S
I
G1-S
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
up to T
amb
= 60
C;
note 1
CONDITIONS
65
MIN.
BF996S
MAX.
20
30
30
10
10
200
+150
150
V
UNIT
mA
mA
mA
mA
mW
C
C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
460
UNIT
K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
10
0.7 mm.
handbook, halfpage
200
MGE792
Ptot
(mW)
100
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
April 1991
3
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
STATIC CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
G1SS
I
G2SS
V
(BR)G1-SS
V
(BR)G2-SS
I
DSS
V
(P)G1-S
V
(P)G2-S
PARAMETER
gate cut-off current
gate cut-off current
gate-source breakdown voltage
gate-source breakdown voltage
drain current
gate-source cut-off current
gate-source cut-off current
CONDITIONS
V
G1-S
=
5
V; V
G2-S
= V
DS
= 0
V
G2-S
=
5
V; V
G1-S
= V
DS
= 0
I
G1-S
=
10
mA; V
G2-S
= V
DS
= 0
I
G2-S
=
10
mA; V
G1-S
= V
DS
= 0
V
DS
= 15 V; V
G1-S
= 0; V
G2-S
= 4 V
I
D
= 20
A;
V
DS
= 15 V; V
G2-S
= 4 V
I
D
= 20
A;
V
DS
= 15 V; V
G1-S
= 0
MIN.
6
6
4
BF996S
MAX.
50
50
20
20
20
2.5
2
UNIT
nA
nA
V
V
mA
V
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V; T
amb
= 25
C.
SYMBOL
Y
fs
C
ig1-s
C
ig2-s
C
rs
C
os
F
G
P
PARAMETER
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
G
L
= 0.5 mS; B
L
= B
Lopt
f = 800 MHz; G
S
= 3.3 mS;
B
S
= B
Sopt
; G
L
= 1 mS; B
L
= B
Lopt
CONDITIONS
MIN.
15
TYP.
18
2.3
1.2
25
0.8
1
1.8
25
18
MAX.
2.6
UNIT
mS
pF
pF
fF
pF
dB
dB
dB
dB
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
Sopt
April 1991
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
Plastic surface-mounted package; 4 leads
BF996S
SOT143B
D
B
E
A
X
y
v
M
A
HE
e
bp
w
M
B
4
3
Q
A
A1
c
1
b1
e1
2
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A1
max
0.1
bp
0.48
0.38
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e1
1.7
HE
2.5
2.1
Lp
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT143B
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-16
06-03-16
April 1991
5
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