BFR94A
NPN 5 GHz wideband transistor
Rev. 4 — 2 October 2014
Product data sheet
1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92
1.2 Features and benefits
High power gain
Low noise figure
Low intermodulation distortion
AEC-Q101 qualified
1.3 Applications
RF wideband amplifiers and oscillators
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
Quick reference data
Conditions
Min Typ
-
-
-
-
-
-
I
C
= i
C
= 0 mA; V
CE
= 10 V;
f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
C
f = 1 GHz
f = 2 GHz
NF
V
O
noise figure
output voltage
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
S
=
opt
; T
amb
= 25
C
IMD =
60
dB; I
C
= 14 mA;
V
CE
= 10 V; R
L
= 75
;
f
p
+ f
q
f
r
= 793.25 MHz
-
-
-
-
14
8
2.1
150
-
-
-
-
dB
dB
dB
mV
-
-
-
-
0.35
5
Max
20
15
25
300
-
-
Unit
V
V
mA
mW
pF
GHz
collector-base voltage
collector-emitter
voltage
collector current
total power dissipation T
sp
95
C
feedback capacitance
transition frequency
unilateral power gain
Symbol Parameter
NXP Semiconductors
BFR94A
NPN 5 GHz wideband transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
BFR94A
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
BFR94A
Marking
Marking code
NL*
Description
* = p : made in Hong Kong
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Conditions
open emitter
open base
open collector
T
sp
95
C;
see
Figure 2
[1]
Min
-
-
-
-
-
65
-
Max
20
15
2
25
300
+150
+150
Unit
V
V
V
mA
mW
C
C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
T
sp
is the temperature at the solder point of the collector pin.
BFR94A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 2 October 2014
2 of 14
NXP Semiconductors
BFR94A
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Typ
260
Unit
K/W
thermal resistance from junction to T
sp
95
C
solder point
T
sp
is the temperature at the solder point of the collector pin.
7. Characteristics
Table 7.
Symbol
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
unilateral power gain
Conditions
I
E
= 0 A; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V; see
Figure 3
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz:
see
Figure 4
I
C
= i
c
= 0 A; V
EB
= 10 V; f = 1 MHz
I
C
= i
c
= 0 mA; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz;
see
Figure 5
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
C
f = 1 GHz
f = 2 GHz
NF
noise figure
I
C
= 5 mA; V
CE
= 10 V;
S
=
opt
;
T
amb
= 25
C;
see
Figure 12
and
Figure 13
f = 1 GHz
f = 2 GHz
V
O
IMD2
output voltage
second-order intermodulation
distortion
see
Figure 15
[2][3]
[2][4]
[1]
Min
-
65
-
-
-
-
Typ
-
90
0.6
1.2
0.35
5
Max
50
135
-
-
-
-
Unit
nA
pF
pF
pF
GHz
-
-
14
8
-
-
dB
dB
-
-
-
-
2.1
3
150
50
-
-
-
-
dB
dB
mV
dB
[1]
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
[2]
[3]
Measured on the same crystal in a SOT37 package (BFR90A).
IMD =
60
dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
;
VSWR < 2; T
amb
= 25
C;
V
p
= V
O
at IMD =
60
dB; f
p
= 795.25 MHz;
V
q
= V
O
6
dB at f
q
= 803.25 MHz;
V
r
= V
O
6
dB at f
r
= 805.25 MHz;
measured at f
p
+ f
q
f
r
= 793.25 MHz
[4]
I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
;
VSWR < 2; T
amb
= 25
C;
V
p
= 60 mV at f
p
= 250 MHz;
V
q
= 60 mV at f
p
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz
BFR94A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 2 October 2014
3 of 14
NXP Semiconductors
BFR94A
NPN 5 GHz wideband transistor
2.2 nF
2.2 nF
+V
CC
L3
33 kΩ
L2
1 nF
1 nF
L1
300
Ω
+V
BB
75
Ω
output
75
Ω
input
1 nF
DUT
3.3 pF
18
Ω
0.82 pF
001aam883
L1 = L2 = 5
H
choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig 1.
Intermodulation distortion and second harmonic distortion MATV test circuit
400
P
tot
(mW)
300
001aam884
120
h
FE
001aam885
80
200
40
100
0
0
50
100
150
T
sp
(°C)
200
0
0
10
20
I
C
(mA)
30
V
CE
= 10 V; T
j
= 25
C.
Fig 2.
Power derating curve
Fig 3.
DC current gain as a function of collector
current; typical values
BFR94A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 2 October 2014
4 of 14
NXP Semiconductors
BFR94A
NPN 5 GHz wideband transistor
1.0
C
C
(pF)
0.8
001aam886
6
f
T
(GHz)
4
001aam887
0.6
0.4
2
0.2
0
0
5
10
15
V
CB
(V)
20
0
0
10
20
I
C
(mA)
30
I
C
= i
C
= 0 mA; f = 1 MHz; T
j
= 25
C.
V
CE
= 10 V; f = 500 MHz; T
amb
= 25
C.
Fig 4.
Collector capacitance as a function of
collector-base voltage; typical values
30
001aam888
Fig 5.
Transition frequency as a function of collector
current; typical values
30
001aam889
gain
(dB)
MSG
20
G
UM
gain
(dB)
20
MSG
G
UM
10
10
0
0
5
10
15
20
I
C
(mA)
25
0
0
5
10
15
20
I
C
(mA)
25
V
CE
= 10 V; f = 500 MHz.
MSG = maximum stable gain.
V
CE
= 10 V; f = 500 MHz.
MSG = maximum stable gain.
Fig 6.
Gain as a function of collector current; typical
values
Fig 7.
Gain as a function of collector current; typical
values
BFR94A
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 2 October 2014
5 of 14
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