BUK9609-75A
N-channel TrenchMOS logic level FET
Rev. 4 — 30 August 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
75
75
230
V
A
W
Static characteristics
R
DSon
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 14
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
≤
75 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
562
mJ
-
-
-
-
7.6
9.95 mΩ
mΩ
mΩ
9
7.23 8.5
[1]
Continuous current is limited by package.
Nexperia
BUK9609-75A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9609-75A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 3;
see
Figure 1
I
DM
P
tot
T
stg
T
j
V
GSM
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Max
75
75
10
75
75
440
230
175
175
15
75
440
562
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
Continuous current is limited by package.
All information provided in this document is subject to legal disclaimers.
©
BUK9609-75A
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 4 — 30 August 2011
2 of 13
Nexperia
BUK9609-75A
N-channel TrenchMOS logic level FET
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nb44
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
µ
s
100
µ
s
10
1 ms
DC
1
10 ms
100 ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9609-75A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 4 — 30 August 2011
3 of 13
Nexperia
BUK9609-75A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see
Figure 4
minimum footprint ; mounted on a
printed-circuit board
Min
-
-
Typ
-
50
Max
0.65
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
−1
δ
= 0.5
0.2
0.1
0.05
0.02
10
−2
P
03nb45
δ
=
t
p
T
Single Shot
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9609-75A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 4 — 30 August 2011
4 of 13
Nexperia
BUK9609-75A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 12
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 12
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 12
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 75 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 75 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 13;
see
Figure 14
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 14
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from upper edge of drain mounting
base to centre of die ; T
j
= 25 °C
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
L
S
internal source inductance
from source lead to source bond pad ;
T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 8
-
-
-
-
-
-
-
-
-
-
6631
905
610
47
185
424
226
2.5
4.5
7.5
8840
1090
840
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
75
70
1
0.5
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
7.23
7.6
Max
-
-
2
-
2.3
500
10
100
100
9.95
18.9
8.5
9
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
source-drain voltage
reverse recovery time
recovered charge
-
-
-
0.85
70.3
213
1.2
-
-
V
ns
nC
BUK9609-75A
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 4 — 30 August 2011
5 of 13
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