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SMDJ7.5CA-HRAT7

产品描述TVS DIODE 7.5V 12.9V DO214AB
产品类别分立半导体    二极管   
文件大小1MB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
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SMDJ7.5CA-HRAT7概述

TVS DIODE 7.5V 12.9V DO214AB

SMDJ7.5CA-HRAT7规格参数

参数名称属性值
是否Rohs认证符合
包装说明R-PDSO-J2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压9.21 V
最小击穿电压8.33 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-J2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散3000 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散6.5 W
最大重复峰值反向电压7.5 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

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Transient Voltage Suppression Diodes
Surface Mount – 3000W > SMDJ-HRA Series
SMDJ-HRA Series
Uni-directional
Description
RoHS
Pb
e3
TVS Diode Arrays
(SPA
Family of Products)
Bi-directional
The SMDJ-HRA High Reliability series is designed
specifically to protect sensitive electronic equipment from
voltage transients induced by lightning and other transient
voltage events. These are available with a variety of up-
screening options for enhanced reliability.
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Features
• High reliability devices
with fabrication and
assembly lots traceability
• Enhanced reliability
screening options are
available in reference to
MIL-PRF-19500. Refer to
screen process table for
more detail on screening
options
• SMT for minimal board
footprint
• Low profile package
• Built-in strain relief
V
BR
@T
J
= V
BR
@25°C x (1+αT x
(T
J
- 25))
(αT:Temperature Coefficient)
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by
10/1000µs
waveform
(Fig.1)(Note 1), (Note 2)
Power Dissipation on infinite heat
sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
only
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
3000
6.5
300
3.5
-65 to 150
15
75
Unit
W
W
A
V
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
components only, duty cycle=4 per minute maximum.
• Glass passivated chip
junction
• 3000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
≤ 2µA for V
R
>
10V
• High Temperature
soldering guaranteed:
260°C/40 seconds at
terminals
• UL Recognized compound
meeting flammability
rating V-0
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
2nd level interconnect is
Pb-free per IPC/JEDEC
J-STD-609A.01
Functional Diagram
Applications
SMDJ-HRA components are ideal for the high reliability
protection of I/O Interfaces, V
CC
bus and other vulnerable
circuits used in Telecom, Computer, Industrial and
Consumer electronic applications.
Bi-directional
Cathode
Uni-directional
Anode
1
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 03/28/18
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