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SMCG8.0A-HRA

产品描述TVS DIODE 8V 13.6V DO215AB
产品类别分立半导体    二极管   
文件大小1MB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
下载文档 详细参数 全文预览

SMCG8.0A-HRA概述

TVS DIODE 8V 13.6V DO215AB

SMCG8.0A-HRA规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Littelfuse
包装说明R-PDSO-L2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压9.83 V
最小击穿电压8.89 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-215AB
JESD-30 代码R-PDSO-L2
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
最大功率耗散6.5 W
参考标准IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压8 V
表面贴装YES
技术AVALANCHE
端子形式L BEND
端子位置DUAL

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Transient Voltage Suppression Diodes
Surface Mount – 1500W > SMCG-HR series
SMCG-HR Series
Description
RoHS
Pb
e3
The SMCG-HR series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• High-Reliability up-
screened for critical
applications require higher
reliability performance
and low infant mortality
failures.
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1µA
above 12V
• For surface mounted
applications to optimize
board space
• L bend lead forming gives
best solderbility for Hi
reliability application
• ypical failure mode is
T
short from over-specified
voltage or current
• hisker test is conducted
W
based on JEDEC
JESD201A per its table 4a
and 4c
• EC-61000-4-2 ESD
I
15kV(Air), 8kV (Contact)
• SD protection of data
E
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• FT protection of data
E
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Built-in strain relief
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• 1500W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
V
BR
@T
J
= V
BR
@25°C x (1+αT
x (T
J
- 25)) (αT:Temperature
Coefficient, typical value is
0.1%)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC
by 10/1000µs waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on infinite heat
sink at T
A
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
only
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
1500
6.5
200
3.5
-65 to 150
15
75
Unit
W
W
A
V
°C
°C/W
°C/W
• Glass passivated chip
junction
• High temperature
soldering guaranteed:
260°C/10 seconds at
terminals
• eet MSL level1, per
M
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free
• RoHS compliant with
exemption 7a and 7c-I
• 2nd level interconnect is
Pb-free per IPC/JEDEC
J-STD-609A.01
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Functional Diagram
Bi-directional
Cathode
Uni-directional
Anode
©2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/09/15
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