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NCD5701BDR2G

产品描述HIGH CURRENT IGBT GATE DRIVER
产品类别半导体    电源管理   
文件大小338KB,共20页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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NCD5701BDR2G概述

HIGH CURRENT IGBT GATE DRIVER

NCD5701BDR2G规格参数

参数名称属性值
驱动配置低压侧
通道类型单路
驱动器数1
栅极类型IGBT
电压 - 电源20V
电流 - 峰值输出(灌入,拉出)7.8A,6.8A
上升/下降时间(典型值)18ns,19ns
工作温度-40°C ~ 150°C(TJ)
安装类型表面贴装
封装/外壳8-SOIC(0.154",3.90mm 宽)
供应商器件封装8-SOIC

文档预览

下载PDF文档
NCD5701A, NCD5701B,
NCD5701C
High Current IGBT Gate
Drivers
The NCD5701A, NCD5701B and NCD5701C are high−current,
high−performance stand−alone IGBT drivers for high power
applications that include solar inverters, motor control and
uninterruptible power supplies. The devices offer a cost−effective
solution by eliminating external output buffer. Devices protection
features include accurate Under−voltage−lockout (UVLO),
desaturation protection (DESAT) and Active Low FAULT output. The
drivers also feature an accurate 5.0 V output. The drivers are designed
to accommodate a wide voltage range of bias supplies including
unipolar and NCD5701B even bipolar voltages.
Depending on the pin configuration the devices also include Active
Miller Clamp (NCD5701A) and separate high and low (V
OH
and V
OL
)
driver outputs for system design convenience (NCD5701C).
All three available pin configuration variants have 8−pin SOIC
package.
Features
www.onsemi.com
8
1
SOIC−8
D SUFFIX
CASE 751
8
MARKING
DIAGRAM
NCD5701X
ALYW
G
1
NCD5701 = Specific Device Code
X
= A, B or C
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
High Current Output (+4/−6 A) at IGBT Miller Plateau voltages
Low Output Impedance for Enhanced IGBT Driving
Short Propagation Delay with Accurate Matching
Direct Interface to Digital Isolator/Opto−coupler/Pulse Transformer
for Isolated Drive, Logic Compatibility for Non−isolated Drive
DESAT Protection with Programmable Delay
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range
This Device is Pb−Free, Halogen−Free and RoHS Compliant
PIN CONNECTIONS
1
8
VIN
VREF
FLT
DESAT
2
3
4
7
6
5
CLAMP
GND
VO
VCC
NCD5701A
1
8
VIN
VREF
FLT
DESAT
2
3
4
7
6
5
VEE
GND
VO
VCC
NCD5701A Features
Active Miller Clamp to Prevent Spurious Gate Turn−on
NCD5701B Features
Negative Output Voltage for Enhanced IGBT Driving
1
NCD5701B
8
NCD5701C Features
VIN
VREF
FLT
DESAT
2
3
4
7
6
5
GND
VOL
VOH
VCC
Separate Outputs for V
OL
and V
OH
Typical Applications
Solar Inverters
Motor Control
Uninterruptible Power Supplies (UPS)
Rapid Shutdown for Photovoltaic Systems
NCD5701C
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
June, 2017 − Rev. 4
Publication Order Number:
NCD5701/D

NCD5701BDR2G相似产品对比

NCD5701BDR2G NCD5701ADR2G NCD5701CDR2G
描述 HIGH CURRENT IGBT GATE DRIVER HIGH CURRENT IGBT GATE DRIVER HIGH CURRENT IGBT GATE DRIVER
驱动配置 低压侧 低压侧 高压侧或低压侧
通道类型 单路 单路 同步
驱动器数 1 1 1
栅极类型 IGBT IGBT IGBT
电压 - 电源 20V 20V 20V
电流 - 峰值输出(灌入,拉出) 7.8A,6.8A 4A,6A 7.8A,6.8A
上升/下降时间(典型值) 18ns,19ns 18ns,19ns 18ns,19ns
工作温度 -40°C ~ 150°C(TJ) -40°C ~ 150°C(TJ) -40°C ~ 150°C(TJ)
安装类型 表面贴装 表面贴装 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽) 8-SOIC(0.154",3.90mm 宽) 8-SOIC(0.154",3.90mm 宽)
供应商器件封装 8-SOIC 8-SOIC 8-SOIC

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