BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Rev. 03 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for intermediate level gate
drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
100
204
V
A
W
Static characteristics
R
DSon
V
GS
= 5 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 14
-
-
11.1
4.2
13
4.9
mΩ
mΩ
Nexperia
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
Table 1.
Symbol
E
DS(AL)S
Quick reference data
…continued
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
I
D
= 100 A; V
sup
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C
I
D
= 25 A; V
DS
= 44 V; V
GS
= 10 V;
see
Figure 18;
see
Figure 17
Min
-
Typ
-
Max Unit
263
mJ
Avalanche ruggedness
Dynamic characteristics
Q
GD
-
31.5 -
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK664R4-55C
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 21 December 2010
2 of 16
Nexperia
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 100 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C
[4][5][6]
[3]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
DC
pulsed
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
[2]
[3]
Min
-
-16
-20
-
-
-
-
-55
-55
-
-
-
-
Max
55
16
20
100
97
550
204
175
175
100
550
263
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
-16 V accumulated duration not to exceed 168 hrs.
Accumulated pulse duration not to exceed 5 mins.
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 21 December 2010
3 of 16
Nexperia
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
200
I
D
(A)
150
003aae850
120
P
der
(%)
80
03aa16
100
(1)
40
50
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aae707
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
10
2
t
p
= 10
µ
s
100
µ
s
10
1 ms
DC
1
10 ms
100 ms
10
-1
10
-1
1
10
V
DS
(V)
10
2
T
mb
= 25 °C; I
DM
is a single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 21 December 2010
4 of 16
Nexperia
BUK664R4-55C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see
Figure 4
Min
-
Typ
-
Max
0.74
Unit
K/W
1
Z
th(j-mb)
(K/W)
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
10
−2
single shot
t
p
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
P
003aae531
δ
=
t
p
T
t
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK664R4-55C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 03 — 21 December 2010
5 of 16
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