Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
Channel-2
30
30
R
DS(on)
() (MAX.)
0.00380 at V
GS
= 10 V
0.00530 at V
GS
= 4.5 V
0.00117 at V
GS
= 10 V
0.00158 at V
GS
= 4.5 V
I
D
(A) Q
g
(TYP.)
60
a
60
a
60
a
60
a
11 nC
46 nC
FEATURES
• TrenchFET
®
Gen IV power MOSFET
• SkyFET
®
low-side MOSFET with integrated
Schottky
• 100 % R
g
and UIS tested
• Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
N-Channel 1
MOSFET
G
HS
/G
1
G
1
Return/S
1
V
IN
/D
1
V
SW
/S
1
-D
2
G
LS
/G
2
Schottky
Diode
Ordering Information:
SiZF906DT-T1-GE3 (lead (Pb)-free and halogen-free)
N-Channel 2
MOSFET
GND/S
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
SYMBOL
V
DS
V
GS
60
a
60
a
27
b, c
21.7
b, c
80
31.6
3.7
b, c
18
16
38
24
4.5
b, c
2.9
b, c
-55 to +150
260
CHANNEL-1
30
+20, -16
60
a
60
a
52
b, c
41
b, c
100
60
a
4.1
b, c
19
18
83
53
5
b, c
3.2
b, c
°C
W
mJ
A
CHANNEL-2
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Source)
t
10 s
Steady State
SYMBOL
R
thJA
R
thJC
CHANNEL-1
TYP.
22
2.6
MAX.
28
3.3
CHANNEL-2
TYP.
20
1.2
MAX.
25
1.5
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 60 °C/W for channel-1 and 60 °C/W for channel-2.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
30
1.1
1.1
-
-
-
-
-
-
20
20
-
-
-
-
-
-
-
-
-
-
-
-
50
-
300
-
-
-
-
2.2
2.2
± 100
± 100
1
250
5
3000
-
-
A
μA
nA
V
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
g
fs
V
DS
= 10 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
I
D(on)
0.00300 0.00380
0.00090 0.00117
0.00400 0.00530
0.00120 0.00158
130
130
-
-
S
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
2000
8200
680
3700
50
260
0.025
0.033
-
-
-
-
-
-
0.050
0.070
49
200
22
92
-
-
-
-
-
-
2
1.2
nC
pF
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
C
rss
/C
iss
Ratio
-
-
24.5
100
11
Total Gate Charge
Q
g
-
-
-
-
-
-
-
0.2
0.12
46
5.1
17.1
1.3
7.2
21
96
1
0.6
Gate-Source Charge
Q
gs
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
Gate-Drain Charge
Q
gd
Output Charge
Q
oss
Gate Resistance
R
g
f = 1 MHz
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-On Delay Time
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
45
80
60
20
65
40
30
10
15
35
20
20
40
10
10
40
90
160
120
40
130
80
60
20
30
70
40
40
80
20
20
ns
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
a
t
f
I
S
T
C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
0.39
35
70
20
105
15
37
20
33
31.6
60
80
100
1.2
0.59
90
140
40
210
-
-
-
-
ns
V
A
I
SM
I
S
= 10 A, V
GS
= 0 V
I
S
= 3 A, V
GS
= 0 V
Body Diode Voltage
V
SD
Ch-1
Ch-2
Ch-1
Ch-2
Body Diode Reverse Recovery Time
t
rr
Channel-1
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
Body Diode Reverse Recovery Charge
Q
rr
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
nC
Reverse Recovery Fall Time
t
a
Reverse Recovery Rise Time
t
b
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZF906DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
100
10000
80
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
60
2nd line
I
D
- Drain Current (A)
80
1000
T
C
= 25 °C
40
V
GS
= 3 V
40
100
20
T
C
= 125 °C
T
C
= -55 °C
100
20
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.008
0.007
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
C - Capacitance (pF)
0.006
1st line
2nd line
0.005
0.004
0.003
0.002
0.001
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
V
GS
= 10 V
Axis Title
10000
3000
2500
C
iss
10000
1000
V
GS
= 4.5 V
2000
1500
1000
500
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
1000
1st line
2nd line
100
10
10000
I
D
= 15 A
V
GS
= 10 V
C
oss
100
C
rss
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 20 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
8
1000
1st line
2nd line
6
V
DS
= 15 V
V
DS
= 24 V
V
DS
= 7.5 V
1.4
1000
V
GS
= 4.5 V
4
1.0
100
0.8
100
2
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
1.2
1st line
2nd line
60
SiZF906DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.020
I
D
= 15 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.016
1000
1st line
2nd line
100
T
J
= 125 °C
T
J
= 25 °C
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
10
T
J
= 25 °C
1000
1st line
2nd line
0.012
0.008
1
100
0.004
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.0
1.8
2nd line
V
GS(th)
(V)
1.6
1.4
1.2
1.0
0.8
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
100
10
1000
2nd line
Power (W)
1st line
2nd line
30
10000
50
Axis Title
10000
40
1000
1st line
2nd line
100
0.1
1
10
100
10
1000
Time (s)
2nd line
20
I
D
= 250 μA
0
0.0001 0.001 0.01
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
Limited by R
DS(on) (1)
10000
100
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
10
1 ms, 100μs
10 ms
100 ms
100
1s
10 s
DC
1
0.1
T
A
= 25 °C
Single pulse
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S16-0742 Rev. A, 19-Apr-16
Document Number: 67547
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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