CXG1104TN
High Power SPDT Switch with Logic Control
Description
The CXG1104TN is a high power antenna switch
MMIC for use in cellular handsets, for example, CDMA.
The CXG1104TN has on-chip logic, which enables
the switch circuit to operate by 1 CMOS control line.
The Sony JFET process is used for low insertion
loss and on-chip logic circuit.
Features
•
•
•
•
Low insertion loss: 0.3dB @900MHz, 0.4dB @1.9GHz
High linearity: IIP3 (Typ.) = 70dBm
1 CMOS compatible control line
Small package size: 10-pin TSSOP
10 pin TSSOP (Plastic)
Applications
Cellular handsets, for example, narrow band CDMA and wide band CDMA
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings
(Ta = 25°C)
•
Bias voltage
V
DD
•
Control voltage
•
Operating temperature
•
Storage temperature
Vctl
Topr
Tstg
7
5
–35 to +85
–65 to +150
V
V
°C
°C
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
The actual ESD test data will be available later.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E00X23A2Z-PS
CXG1104TN
Block Diagram and Recommended Circuit
Rctl (1kΩ)
CTL
Cbypass
(100pF)
GND
6
5
Cbypass
(100pF)
C
RF
(100pF)
GND
8
3
GND
V
DD
7
4
RF1
GND
RF2
C
RF
(100pF)
9
2
GND
10
1
C
RF
(100pF)
RF3
When using this IC, the following external components should be used:
This resistor is used to improve ESD performance. 1kΩ is recommended.
This capacitor is used for RF decoupling and must be used for all applications.
100pF is recommended.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
Rctl:
C
RF
:
Truth Table
On Pass
RF1 – RF2
RF1 – RF3
CTL
L
H
DC Bias Condition
Item
Vctl (H)
Vctl (L)
V
DD
Min.
2.0
0
2.6
Typ.
3.0
—
3.0
Max.
3.6
0.8
4.5
(Ta = 25°C)
Unit
V
V
V
–2–
CXG1104TN
Electrical Characteristics
Item
Insertion loss
Isolation
VSWR
Harmonics
1dB compression input power
Input IP3
Switching speed
Control current
Bias current
Symbol
IL
ISO.
VSWR
2fo
3fo
P1dB
IIP3
TSW
Ictl
I
DD
Vctl (High) = 3V
V
DD
= 3V
900MHz
1.9GHz
900MHz
1.9GHz
900MHz, 1.9GHz
∗
1
∗
1
V
DD
= 3.0V, 0/3V control
∗
2
20
14
–60
–60
32
60
Condition
(Ta = 25°C)
Min. Typ. Max. Unit
0.30 0.55
0.40 0.65
23
16.5
1.2
–75
–75
35
70
2
40
100
5
80
200
1.4
dB
dB
dB
dB
—
dBc
dBc
dBm
dBm
µs
µA
µA
∗
1
Pin = 29dBm, 900MHz, V
DD
= 3.0V, 0/3V control
∗
2
Pin = 25dBm (900MHz) + 25dBm (901MHz), V
DD
= 3.0V, 0/3V control
–3–
CXG1104TN
Package Outline
Unit: mm
∗2.8
± 0.1
10
10PIN TSSOP (PLASTIC)
1.2MAX
0.1
6
∗2.2
± 0.1
+ 0.15
0.1 – 0.05
3.2 ± 0.2
1
5
0.5
0.25
0˚ to 10˚
+ 0.08
0.22 – 0.07
0.1
M
(0.2)
+ 0.08
0.22 – 0.07
DETAIL
A
NOTE: Dimension "∗" does not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
SONY CODE
EIAJ CODE
JEDEC CODE
TSSOP-10P-L01
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS
EPOXY RESIN
SOLDER PLATING
COPPER ALLOY
0.02g
10PIN TSSOP (PLASTIC)
1.2MAX
∗2.8
± 0.1
10
6
0.1
(0.1)
+ 0.025
0.12 – 0.015
+ 0.15
0.1 – 0.05
0.25
0˚ to 10˚
DETAIL
A
EPOXY RESIN
SOLDER PLATING
COPPER ALLOY
0.02g
A
∗2.2
± 0.1
3.2 ± 0.2
1
5
0.5
+ 0.08
0.22 – 0.07
0.1
M
(0.2)
+ 0.08
0.22 – 0.07
NOTE: Dimension "∗" does not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
SONY CODE
EIAJ CODE
JEDEC CODE
TSSOP-10P-L01
LEAD TREATMENT
LEAD MATERIAL
PACKAGE MASS
LEAD PLATING SPECIFICATIONS
ITEM
LEAD MATERIAL
SOLDER COMPOSITION
PLATING THICKNESS
SPEC.
COPPER ALLOY
Sn-Bi Bi:1-4wt%
5-18µm
(0.1)
+ 0.025
0.12 – 0.015
A
0.45 ± 0.15
0.45 ± 0.15
–4–
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