• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
5
6.
15
m
m
1
Top View
5.1
m
5m
4
G
Bottom View
3
S
2
S
1
S
APPLICATIONS
• Synchronous buck
• Synchronous rectification
• DC/DC conversion
D
PRODUCT SUMMARY
MOSFET
V
DS
(V)
R
DS(on)
max. (Ω) at V
GS
= 10 V
R
DS(on)
max. (Ω) at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
a, g
SCHOTTKY
V
F
(V) at 10 A
I
F
(A)
a, g
Configuration
0.55
60
Single plus integrated Schottky
30
0.00110
0.00154
35
60
G
Schottky
diode
S
N-channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiRC18DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
T
C
= 25 °C
Continuous drain current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current (t = 100 μs)
Continuous source current (MOSFET diode conduction)
Single pulse avalanche current
Single pulse avalanche energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum power dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
SYMBOL
V
DS
V
GS
LIMIT
30
+20, -16
60
a
60
a
52
b, c
42
b, c
250
60
a
5
a, b
30
45
54.3
34.7
5
b, c
3.2
b, c
-55 to +150
260
°C
W
mJ
A
UNIT
V
S17-0903-Rev. B, 12-Jun-17
Document Number: 76402
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRC18DP
www.vishay.com
Vishay Siliconix
SYMBOL
t
≤
10 s
Steady state
R
thJA
R
thJC
TYPICAL
20
1.8
MAXIMUM
25
2.3
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b, f
Maximum junction-to-case (drain)
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 65 °C/W
g. T
C
= 25 °C
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
MIN.
30
1
-
-
-
40
-
-
-
-
-
-
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
0.06
1
-
0.00085
0.00135
70
5060
2400
350
0.069
74
35
11.8
8.4
0.5
16
21
30
12
31
77
38
37
-
-
0.41
58
72
26
32
MAX.
-
2.4
± 100
0.10
10
-
0.00110
0.00154
-
-
-
-
0.140
111
53
-
-
0.9
32
42
60
24
62
154
76
74
60
100
0.55
116
144
-
-
UNIT
V
nA
mA
A
Ω
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
pF
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
Gate-source charge
Q
gs
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Gate-drain charge
Q
gd
Gate resistance
R
g
f = 1 MHz
Turn-on delay time
t
d(on)
Rise time
t
r
V
DD
= 15 V, R
L
= 1.5
Ω,
I
D
≅
10 A,
V
GEN
= 10 V, R
g
= 1
Ω
Turn-off delay time
t
d(off)
Fall time
t
f
Turn-on delay time
t
d(on)
Rise time
t
r
V
DD
= 15 V, R
L
= 1.5
Ω,
I
D
≅
10 A,
V
GEN
= 4.5 V, R
g
= 1
Ω
Turn-off delay time
t
d(off)
Fall time
t
f
Drain-source Body Diode Characteristics
T
C
= 25°C
Continuous source-drain diode current
I
S
Pulse diode forward current
I
SM
Body diode voltage
V
SD
I
S
= 5 A, V
GS
= 0 V
Body diode reverse recovery time
t
rr
Body diode reverse recovery charge
Q
rr
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
Reverse recovery fall time
t
a
Reverse recovery rise time
t
b
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0903-Rev. B, 12-Jun-17
Document Number: 76402
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRC18DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
150
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
150
10000
120
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
90
2nd line
I
D
- Drain Current (A)
120
1000
1st line
2nd line
100
30
T
C
= 125 °C
V
GS
= 2 V
T
C
= -55 °C
90
60
V
GS
= 3 V
60
T
C
= 25 °C
100
30
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.0020
10000
7500
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.0017
V
GS
= 4.5 V
6000
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
C
iss
1000
1st line
2nd line
100
1500
C
rss
0.0014
4500
C
oss
0.0011
V
GS
= 10 V
3000
100
0.0008
0.0005
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.7
I
D
= 15 A
V
GS
= 10 V
10000
8
1000
1st line
2nd line
6
1.5
1000
1st line
2nd line
100
0.9
10
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
1.3
V
GS
= 4.5 V
4
V
DS
= 10 V, 15 V, 20 V
1.1
100
2
0
0
16
32
48
64
80
Q
g
- Total Gate Charge (nC)
2nd line
10
0.7
Gate Charge
On-Resistance vs. Junction Temperature
S17-0903-Rev. B, 12-Jun-17
Document Number: 76402
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRC18DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
T
J
= 150 °C
Vishay Siliconix
Axis Title
10000
0.005
I
D
= 15 A
10000
10
2nd line
I
S
- Source Current (A)
2nd line
R
DS(on)
- On-Resistance (Ω)
0.004
1000
1st line
2nd line
T
J
= 125 °C
0.1
100
0.01
1st line
2nd line
1
T
J
= 25 °C
1000
0.003
0.002
100
0.001
T
J
= 25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.1
10000
500
Axis Title
10000
2nd line
I
GSS
- Gate Current (mA)
0.01
1000
1st line
2nd line
0.001
V
DS
= 10 V, 20 V, 30 V
400
1000
2nd line
Power (W)
1st line
2nd line
100
100
10
0.01
0.1
Time (s)
2nd line
1
10
300
0.0001
200
100
0.00001
0.000001
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0.001
Reverse Current vs. Junction Temperature
Single Pulse Power
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1 ms
1000
1st line
2nd line
100
10
10
Limited by R
DS(on) (1)
10 ms
100 ms
1s
1
0.1
T
a
= 25 °C
Single pulse
BVDSS limited
10 s
DC
0.01
0.01
(1)
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-0903-Rev. B, 12-Jun-17
Document Number: 76402
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRC18DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
200
10000
Vishay Siliconix
160
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
Package Limited
120
80
100
40
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
Current Derating
a
Axis Title
70
10000
2.5
Axis Title
10000
56
1000
2nd line
Power (W)
1st line
2nd line
42
2nd line
Power (W)
2.0
1000
1st line
2nd line
100
0.5
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.5
28
100
14
1.0
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-0903-Rev. B, 12-Jun-17
Document Number: 76402
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
