74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
Rev. 4 — 27 November 2015
Product data sheet
1. General description
The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs
include clamp diodes that enable the use of current limiting resistors to interface inputs to
voltages in excess of V
CC
.
2. Features and benefits
Input levels:
For 74HC03: CMOS level
For 74HCT03: TTL level
Complies with JEDEC standard no. 7A
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC03D
74HCT03D
74HC03DB
74HCT03DB
74HC03PW
74HCT03PW
40 C
to +125
C
TSSOP14
40 C
to +125
C
SSOP14
40 C
to +125
C
Name
SO14
Description
plastic small outline package; 14 leads; body width
3.9 mm
plastic shrink small outline package; 14 leads; body
width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
Version
SOT108-1
SOT337-1
SOT402-1
Type number
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
4. Functional diagram
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
5. Pinning information
5.1 Pinning
Fig 4.
Pin configuration SO14
Fig 5.
Pin configuration (T)SSOP14
5.2 Pin description
Table 2.
Symbol
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
Pin description
Pin
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
14
Description
data input
data input
data output
ground (0 V)
supply voltage
74HC_HCT03
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 27 November 2015
2 of 14
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
6. Functional description
Table 3.
Input
nA
L
L
H
H
[1]
Function table
[1]
Output
nB
L
H
L
H
nY
Z
Z
Z
L
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
Parameter
supply voltage
output voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
SO14 and (T)SSOP14
packages
[1]
[2]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70
C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60
C.
[2]
[1]
Conditions
Min
0.5
0.5
-
-
-
-
50
65
-
Max
+7
+7
20
20
25
50
-
+150
500
Unit
V
V
mA
mA
mA
mA
mA
C
mW
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V
0.5
V < V
O
[1]
[1]
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
74HC_HCT03
Conditions
Min
2.0
0
0
40
-
-
-
74HC03
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
40
-
-
-
74HCT03
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
Unit
V
V
V
C
ns/V
ns/V
ns/V
3 of 14
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 27 November 2015
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC03
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
OZ
input leakage
current
OFF-state
output current
V
I
= V
CC
or GND;
V
CC
= 6.0 V
per input pin; V
I
= V
IL
;
V
O
= V
CC
or GND;
other inputs at V
CC
or GND;
V
CC
= 6.0 V; I
O
= 0 A
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
0
0
0
0.15
0.16
0.1
-
0.1
0.1
0.1
0.26
0.26
-
±0.5
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1
±5.0
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1
±10
V
V
V
V
V
A
A
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
I
CC
C
I
74HCT03
V
IH
V
IL
V
OL
supply current
input
capacitance
HIGH-level
input voltage
LOW-level
input voltage
LOW-level
output voltage
-
-
2.0
3.5
-
-
-
-
20
-
-
-
40
-
A
pF
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
A
I
O
= 4.0 mA
V
I
= V
CC
or GND;
V
CC
= 5.5 V
per input pin; V
I
= V
IL
;
V
O
= V
CC
or GND;
other inputs at V
CC
or GND;
V
CC
= 5.5 V; I
O
= 0 A
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
-
-
-
-
0
0.15
-
-
0.1
0.26
0.1
±0.5
-
-
-
-
0.1
0.33
1
±5.0
-
-
-
-
0.1
0.4
1
±10
V
V
A
A
I
I
I
OZ
input leakage
current
OFF-state
output current
74HC_HCT03
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 27 November 2015
4 of 14
NXP Semiconductors
74HC03; 74HCT03
Quad 2-input NAND gate; open-drain output
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
I
CC
I
CC
supply current
additional
supply current
Conditions
Min
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input pin;
V
I
= V
CC
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
-
25
C
Typ
-
100
Max
2.0
360
40 C
to +85
C 40 C
to +125
C
Unit
Min
-
-
Max
20
450
Min
-
-
Max
40
490
A
A
C
I
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit, see
Figure 7.
Symbol Parameter
Conditions
Min
74HC03
t
pd
propagation delay nA, nB to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
[3]
[2]
[1]
25
C
Typ
Max
40 C
to +125
C
Unit
Max
(85
C)
Max
(125
C)
-
-
-
-
-
-
-
-
28
10
8
8
19
7
6
4
95
19
-
16
75
15
13
-
120
24
-
20
95
19
16
-
145
29
-
25
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT03
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 27 November 2015
5 of 14
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