d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
S18-0451-Rev. B, 23-Apr-2018
Document Number: 76203
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJA58DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 20 V, R
L
= 2
,
I
D
10 A,
V
GEN
= 4.5 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
,
I
D
10 A,
V
GEN
= 10 V, R
g
= 1
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
=10 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 10 mA
I
D
= 250 μA
V
DS
= V
GS
, I
D
=250 μA
V
DS
= 0 V, V
GS
= +20 / -16 V
V
DS
= 40 V, V
GS
=0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
=10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
MIN.
40
-
-
1.1
-
-
-
30
-
-
-
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
24
-5.5
-
-
-
-
-
0.00220
0.00300
125
3750
560
72
50
23
10.3
4.3
24
1.2
10
19
28
8
22
52
23
10
-
-
0.73
38
33
20
18
MAX.
-
-
-
2.4
100
1
15
-
0.00265
0.00360
-
-
-
-
75
35
-
-
-
2.4
20
38
56
16
44
100
46
20
51.6
150
1.1
76
66
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0451-Rev. B, 23-Apr-2018
Document Number: 76203
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJA58DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
150
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
150
10000
120
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
90
2nd line
I
D
- Drain Current (A)
120
1000
1st line
2nd line
100
30
T
C
= 125 °C
V
GS
= 2 V
T
C
= -55 °C
90
60
V
GS
= 3 V
60
T
C
= 25 °C
100
30
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.005
10000
10 000
C
iss
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.004
2nd line
C - Capacitance (pF)
V
GS
= 4.5 V
C
oss
1000
1st line
2nd line
0.003
1000
1000
1st line
2nd line
100
10
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
2nd line
Axis Title
10000
I
D
= 15 A
V
GS
= 10 V
C
rss
0.002
V
GS
= 10 V
100
100
0.001
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.0
8
V
DS
= 20 V
V
DS
= 30 V
1.7
1000
1st line
2nd line
6
V
DS
= 10 V
1000
1st line
2nd line
100
10
1.4
V
GS
= 4.5 V
4
100
2
1.1
0.8
0
0
11
22
33
44
55
Q
g
- Total Gate Charge (nC)
2nd line
10
0.5
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S18-0451-Rev. B, 23-Apr-2018
Document Number: 76203
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiJA58DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.5
Axis Title
10000
Vishay Siliconix
10
2nd line
I
S
- Source Current (A)
1000
1st line
2nd line
1
T
J
= 25 °C
2nd line
V
GS(th)
- Variance (V)
T
J
= 150 °C
0.2
1000
I
D
= 5 mA
0.1
100
0.01
-0.4
I
D
= 250 μA
100
-0.7
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
0.010
I
D
= 15 A
Axis Title
10000
200
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.008
1000
2nd line
Power (W)
1st line
2nd line
0.006
T
J
= 125 °C
160
1000
1st line
2nd line
100
40
T
J
= 25 °C
120
0.004
100
0.002
80
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0.001
10
0.01
0.1
Time (s)
2nd line
1
10
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1000
1st line
2nd line
10
Limited by R
DS(on) (1)
1 ms
10 ms
1
100
100 ms
1s
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
10 s
DC
0.01
0.01
(1)
10
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S18-0451-Rev. B, 23-Apr-2018
Document Number: 76203
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
-0.1
SiJA58DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
120
100
2nd line
I
D
- Drain Current (A)
80
60
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
100
1000
1st line
2nd line
10000
Vishay Siliconix
Current Derating
a
Axis Title
70
10000
2.5
Axis Title
10000
56
1000
2nd line
Power (W)
1st line
2nd line
42
2nd line
Power (W)
2.0
1000
1st line
2nd line
100
0.5
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.5
28
100
14
1.0
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S18-0451-Rev. B, 23-Apr-2018
Document Number: 76203
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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