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MJE170/171/172
MJE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
TO-126
2.Collector
3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: MJE170
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
1. Emitter
Value
- 60
- 80
- 100
- 40
- 60
- 80
-7
-3
-6
-1
12.5
1.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breaksown Voltage
: MJE170
: MJE171
: MJE172
Collector Cut-off Current
: MJE170
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
Test Condition
I
C
= 10mA, I
B
= 0
Min.
-40
-60
-80
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
50
30
12
250
Max.
Units
V
V
V
µA
µA
µA
mA
mA
mA
µA
I
CBO
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, @T
C
= 150°C
V
CB
= - 80V, I
E
= 0, @T
C
= 150°C
V
CB
= - 100V, I
E
= 0, @T
C
= 150°C
V
BE
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
50
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
V
V
V
V
V
V
MHz
pF
Rev. A2, June 2001
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
©2001 Fairchild Semiconductor Corporation
MJE170/171/172
Typical Charactristics
V
CE
= -1V
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
h
FE
, DC CURRENT GAIN
100
V
BE
(sat) I
C
/I
B
=10
-0.8
-0.6
-0.4
V
BE
@V
CE
= -1V
I
C
/I
B
=10
-0.2
I
C
/I
B
=5
V
CE
(sat)
-0.1
-1
-10
-100
10
-0.1
-1
-0.0
-0.01
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
1000
f=0.1MHZ
I
E
=0
C
ob
[pF], CAPACITANCE
t
D
,t
R
[ns], TURN ON TIME
100
100
t
R
t
D
10
10
1
-0.1
-1
-10
-100
1
-0.01
-0.1
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
-10
t
F
,t
STG
[ns], TURN OFF TIME
10
t
STG
I
C
[A], COLLECTOR CURRENT
0
µ
s
s
50
0
µ
-1
DC
50 m
s
100
t
F
-0.1
MJE170
MJE171
MJE172
V
CE
MAX.
-0.01
-1
-10
-100
10
-0.1
-1
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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