NTD6416ANL, NVD6416ANL
N-Channel Power MOSFET
100 V, 19 A, 74 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current
Power Dissipation
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
±20
19
13
71
70
−55 to
+175
19
50
W
A
°C
A
mJ
Unit
V
V
A
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V
(BR)DSS
100 V
R
DS(on)
MAX
74 mW @ 10 V
I
D
MAX
19 A
D
G
S
4
4
1 2
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
t
p
= 10
ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 18.2 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
MARKING DIAGRAM
& PIN ASSIGNMENTS
T
L
260
°C
4 Drain
AYWW
64
16ANLG
4 Drain
AYWW
64
16ANLG
3
Source
1
Gate
2
Drain
A
Y
WW
6416ANL
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
3
Source
Publication Order Number:
NTD6416ANL/D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) − Steady State
Junction−to−Ambient − Steady State (Note 1)
Symbol
R
qJC
R
qJA
Max
2.1
47
Unit
°C/W
1
Gate
2
Drain
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
November, 2016 − Rev. 6
NTD6416ANL, NVD6416ANL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
120
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On−Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
1.0
5.4
2.2
V
mV/°C
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 19 A
70
62
68
18
80
74
74
mW
Forward Transconductance
g
FS
V
DS
= 5 V, I
D
= 10 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 19 A, R
G
= 6.1
W
7.0
16
35
40
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
V
GS
= 10 V, V
DS
= 80 V, I
D
= 19 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
700
110
50
25
0.7
2.4
9.6
3.2
2.4
V
W
40
nC
1000
pF
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.9
0.72
50
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 19 A
38
14
112
nC
ns
1.2
V
V
GS
= 0 V, I
S
= 19 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
T
a
T
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
40
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
30
10 V
4.5 V
3.6 V
20
3.2 V
10
3.0 V
2.8 V
0
0
V
GS
= 2.4 V
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
0
0
1
2
3
4
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5
I
D
, DRAIN CURRENT (A)
30
40
V
DS
w
10 V
20
10
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.11
I
D
= 19 A
T
J
= 25°C
0.1
0.080
T
J
= 25°C
0.075
0.070
0.065
V
GS
= 10 V
0.060
0.055
0.050
V
GS
= 4.5 V
0.09
0.08
0.07
0.06
2
4
6
8
10
2
6
10
I
D
, DRAIN CURRENT (A)
14
18
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region versus Gate−To−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
V
GS
= 10 V
I
D
= 19 A
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Region versus Drain Current and
Gate−To−Source Voltage
V
GS
= 0 V
T
J
= 150°C
2.5
2
1.5
T
J
= 125°C
100
1
0.5
−50
−25
0
25
50
75
100
125
150
175
10
10
20
30
40
50
60
70
80
90
100
T
J
, JUNCTION TEMPERTURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drian−to−Source Leakage Current
versus Voltage
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3
NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
1400
C, CAPACITANCE (pF)
1200
1000
800
600
400
200
0
0
C
rss
10
20
30
40
50
60
70
C
oss
C
iss
T
J
= 25°C
V
GS
= 0 V
Q
T
8
V
GS
V
DS
4 Q
gs
2
Q
gd
40
80
6
60
0
0
5
10
15
V
DS
= 80 V
I
D
= 19 A
T
J
= 25°C
20
20
80
90
100
0
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 80 V
I
D
= 19 A
V
GS
= 10 V
100
t, TIME (ns)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
20
T
J
= 25°C
V
GS
= 0 V
15
t
d(off)
t
f
t
r
10
10
t
d(on)
5
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
10
mS
I
D
, DRAIN CURRENT (A)
10
100
mS
1 mS
10 mS
dc
50
Figure 10. Diode Forward Voltage versus
Current
I
D
= 18.2 A
40
1
30
0.1
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
20
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
10
0.001
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Resistive Switching Time Variation
versus Gate Resistance
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
100
NTD6416ANL, NVD6416ANL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R
qJA
(°C/W)
20%
10%
5%
2%
1%
P
(pk)
1
0.1
SINGLE PULSE
0.01
0.000001 0.00001
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.0001
0.001
0.01
0.1
1
R
qJA
(t) = r(t) R
qJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJA
(t)
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response (NTD6416ANL DPAK PCB Cu Area 720 mm
2
PCB Cu thk 2 oz)
ORDERING INFORMATION
Device
NTD6416ANLT4G
NTD6416ANL−1G
NVD6416ANLT4G*
NVD6416ANLT4G−VF01*
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
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