Preliminary
Datasheet
RJK0354DSP
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 5.4 m
typ. (at V
GS
= 10 V)
Pb-free
REJ03G1661-0200
Rev.2.00
Apr 05, 2010
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
5
76
4
4
G
5 6 7 8
D D D D
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
8
3
12
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-a
Note3
Tch
Tstg
Note1
Ratings
30
±20
16
128
16
15
22.5
2.0
62.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
Page 1 of 6
RJK0354DSP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.4
7.5
40
1740
335
110
4.4
12
4.3
2.5
7.4
3.6
56.4
5.5
0.81
20
Max
—
± 0.1
1
2.5
7.0
10.5
—
—
—
—
—
—
—
—
—
—
—
—
1.06
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 8 A, V
GS
= 10 V
Note4
I
D
= 8 A, V
GS
= 4.5 V
Note4
I
D
= 8 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 16 A
V
GS
= 10 V, I
D
= 8 A
V
DD
10 V
R
L
= 1.25
Rg = 4.7
I
F
= 16 A, V
GS
= 0
Note4
I
F
= 16 A, V
GS
= 0
di
F
/ dt = 100 A/
s
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
Page 2 of 6
RJK0354DSP
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0
Maximum Safe Operation Area
500
Channel Dissipation Pch (W)
3.0
Drain Current I
D
(A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW
≤
10 s
100
s
=1
0m
era
s
ti
on
10
DC
PW
1m
Op
2.0
1.0
(P
W
N
1 Operation in
< 1
ote
0s
5
this area is
)
limited by R
DS(on)
0.1
0.01
0.1
Ta = 25°C
1 shot Pulse
0.3
1
3
10
30
100
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 5 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
20
4.5 V
10 V
3.1 V
Pulse Test
3.0 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
12
I
D
(A)
Drain Current
16
16
2.9 V
12
Drain Current
8
2.8 V
4
2.7 V
8
4
Tc = 75°C
25°C
–25°C
V
GS
= 2.6 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
160
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(mΩ)
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
Pulse Test
120
30
80
10
V
GS
= 4.5 V
10 V
I
D
= 10 A
40
5A
2A
3
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
Page 3 of 6
RJK0354DSP
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I
D
= 2 A, 5 A, 10 A
12
V
GS
= 4.5 V
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
Ciss
1000
300
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
Coss
Crss
8
4
0
–25
10 V
2 A, 5 A, 10 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
20
Dynamic Input Characteristics
V
DS
(V)
50
V
GS
16
V
DD
= 25 V
10 V
Reverse Drain Current I
DR
(A)
I
D
= 16 A
10 V
16
5V
Pulse Test
40
Drain to Source Voltage
30
Gate to Source Voltage
V
DS
12
12
20
8
8
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
10
20
30
40
4
4
0
0
50
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 15 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
Page 4 of 6
RJK0354DSP
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
1
D=1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
0.001
1s
ho
lse
pu
t
θch
– f(t) =
γs
(t)
• θch
– f
θch
– f = 85°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
0.0001
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1661-0200 Rev.2.00
Apr 05, 2010
Page 5 of 6
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