Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PEMB20; PUMB20
PNP/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 03 — 1 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP resistor-equipped transistors
Table 1.
Product overview
Package
NXP
PEMB20
PUMB20
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD20
PUMD20
NPN/NPN
complement
PEMH20
PUMH20
Type number
1.2 Features
I
I
I
I
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
I
Low current peripheral driver
I
Control of IC inputs
I
Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
0.8
Typ
-
-
2.2
1
Max
−50
−100
2.86
1.2
Unit
V
mA
kΩ
NXP Semiconductors
PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
1
2
3
001aab555
TR1
R2
R1
R1
R2
TR2
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
006aaa212
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMB20
PUMB20
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMB20
PUMB20
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
6G
B9*
Type number
PEMB20_PUMB20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
2 of 11
NXP Semiconductors
PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
Max
−50
−50
−10
+10
−12
−100
−100
200
200
+150
150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
[1][2]
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
[1][2]
-
-
300
300
mW
mW
Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
T
amb
≤
25
°C
[1]
[1] [2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
T
amb
≤
25
°C
[1]
[1] [2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMB20_PUMB20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
3 of 11
NXP Semiconductors
PEMB20; PUMB20
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−30
V; I
B
= 0 A
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−20
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
V
CE
=
−5
V; I
C
=
−1
mA
V
CE
=
−0.3
V; I
C
=
−20
mA
Min
-
-
-
-
30
-
-
−2
1.54
0.8
-
Typ
-
-
-
-
-
-
−1.2
−1.6
2.2
1
-
Max
−100
−1
−50
−2
-
−150
−0.5
-
2.86
1.2
3
pF
mV
V
V
kΩ
Unit
nA
µA
µA
mA
Per transistor
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
PEMB20_PUMB20_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2009
4 of 11
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
