MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MW4IC2020/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2020M wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1600 to 2400 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA,
CDMA and W - CDMA.
Final Application
Typical Two - Tone Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
200 mA, I
DQ3
= 300 mA, P
out
= 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
230 mA, I
DQ3
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
Typical CDMA Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
240 mA, I
DQ3
= 250 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 97
Pilot, Sync, Paging, Traffic Codes 8 through 13
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth
•
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
•
Integrated Temperature Compensation with Enable/Disable Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
•
Integrated ESD Protection
•
Also Available in Gull Wing for Surface Mount
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
RD1
V
RG1
V
DS2
V
DS1
MW4IC2020MBR1
MW4IC2020GMBR1
1805 - 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
PIN CONNECTIONS
GND
V
DS2
V
RD1
V
RG1
V
DS1
RF
in
V
DS3
/RF
out
V
GS1
V
GS2
V
GS3
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
3 Stages I
C
14
RF
in
V
DS3/
RF
out
(Top View)
NOTE: Exposed backside flag is source
Functional Block Diagram
terminal for transistors.
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 4
V
GS1
V
GS2
V
GS3
Quiescent Current
Temperature Compensation
13
12
GND
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC2020MBR1 MW4IC2020GMBR1
1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
65
- 0.5, +15
- 65 to +175
175
20
Unit
Vdc
Vdc
°C
°C
dBm
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Stage 1
Stage 2
Stage 3
Symbol
R
θJC
Value (1)
10.5
5.1
2.3
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Freescale Semiconductor, Inc...
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
Rating
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 80 mA, I
DQ2
= 200 mA,
I
DQ3
= 300 mA, P
out
= 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW
Power Gain
Drain Efficiency
f1 = 1805 MHz, f2 = 1805.1 MHz
f1 = 1990 MHz, f2 = 1990.1 MHz
Input Return Loss
Intermodulation Distortion
Stability
(100 mW<P
out
<8 W CW, Load VSWR = 3:1, All Phase Angles)
G
ps
η
D
27
24
18
—
—
29
26
20
—
- 32
- 10
- 27
dB
dBc
—
—
dB
%
IRL
IMD
No Spurious > - 60 dBc
TYPICAL PERFORMANCES
(In Motorola Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 80 mA, I
DQ2
= 200 mA, I
DQ3
= 300 mA,
1805 MHz<Frequency<1990 MHz, 1 - Tone
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Deviation from Linear Phase in 30 MHz Bandwidth @ P
out
= 1 W CW
1805 - 1880 MHz
1930 - 1990 MHz
Delay @ P
out
= 1 W CW Including Output Matching
Part to Part Phase Variation @ P
out
= 1 W CW
P
sat
∆I
QT
G
F
Φ
—
—
—
—
±0.5
±0.2
—
—
1.8
±10
—
—
33
±5
0.15
—
—
—
—
Watts
%
dB
°
Delay
Φ∆
ns
°
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(continued)
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TYPICAL CDMA PERFORMANCES
(In Modified CDMA Test Fixture, 50 ohm system) V
DD
= 26 Vdc,
DQ1
= 80 mA, I
DQ2
= 240 mA, I
DQ3
=
250 mA, P
out
= 1 W Avg., I1930 MHz<Frequency<1990 MHz, 1 - Tone, 9 Channel Forward Model (Pilot, Paging, Sync, Traffic Codes 8
through 13). Peak/Avg. Ratio 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio (±885 kHz @ 30 kHz Bandwidth)
Alternate 1 Channel Power Ratio (±1.25 MHz @ 12.5 kHz Bandwidth)
Alternate 2 Channel Power Ratio (±2.25 MHz @ 1 MHz Bandwidth)
G
ps
η
D
ACPR
ALT1
ALT2
—
—
—
—
—
30
5
- 61
- 69
- 59
—
—
—
—
—
dB
%
dBc
dBc
dBc
TYPICAL GSM EDGE PERFORMANCES
(In Modified GSM EDGE Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 80 mA,
I
DQ2
= 230 mA, I
DQ3
= 230 mA, P
out
= 5 W Avg., 1805 MHz<Frequency<1990 MHz
Power Gain
Drain Efficiency
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
29
15
1
- 66
- 77
—
—
—
—
—
dB
%
% rms
dBc
dBc
Freescale Semiconductor, Inc...
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC2020MBR1 MW4IC2020GMBR1
3
Freescale Semiconductor, Inc.
V
D2
+
V
D1
+
C1
RF
INPUT
Z1
C7
V
G1
V
G2
V
G3
R1
R2
C4
R3
C6
Z2
6
C10
7 NC
8
9
10
11
Quiescent Current
Temperature Compensation
C11
C12
C13 C14
C2
C5
1
2
3 NC
4 NC
5
DUT
16
NC 15
C8
Z9
RF
OUTPUT
+
C3
V
D3
14
Z3
C9
Z4
Z5
Z6
Z7
Z8
NC 13
12
Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
1.820″
0.245″
0.345″
0.327″
0.271″
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.236″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.303″ x 0.087″ Microstrip
0.640″ x 0.087″ Microstrip
0.334″ x 0.087″ Microstrip
1.231″ x 0.043″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 1. MW4IC2020MBR1(GMBR1) Test Circuit Schematic
Table 1. MW4IC2020MBR1(GMBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3
C4
C5, C6, C8
C7
C9, C11
C10
C12
C13
C14
R1, R2, R3
Description
10
µF,
35 V Tantalum Capacitors
220 nF Chip Capacitor (1206)
6.8 pF 100B Chip Capacitors
0.5 pF 100B Chip Capacitor
1.8 pF 100B Chip Capacitors
2.2 pF 100B Chip Capacitor
1 pF 100B Chip Capacitor
0.3 pF 100B Chip Capacitor
10 pF 100B Chip Capacitor
1.8 kW Chip Resistors (1206)
Part Number
TAJE226M035
12065C224K28
100B6R8CW
100B0R5BW
100B1R8BW
100B2R2BW
100B1R0BW
100B0R3BW
100B100GW
Manufacturer
AVX
AVX
ATC
ATC
ATC
ATC
ATC
ATC
ATC
MW4IC2020MBR1 MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Freescale Semiconductor, Inc.
C2
V
D2
V
D1
MW4IC2020
Rev 1
C3
C8
C5
V
D3
C1
C6
C14
C7
C9
C10
C4
V
G1
R1
R2
R3
V
G3
GND
C11 C12
C13
Freescale Semiconductor, Inc...
V
G2
Figure 2. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW4IC2020MBR1 MW4IC2020GMBR1
5
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