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MT29C4G48MAZAPAKQ-5IT

产品描述Memory Circuit, 128KX16, CMOS, PBGA168, GREEN, VFBGA-168
产品类别存储   
文件大小385KB,共15页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 选型对比 全文预览

MT29C4G48MAZAPAKQ-5IT概述

Memory Circuit, 128KX16, CMOS, PBGA168, GREEN, VFBGA-168

MT29C4G48MAZAPAKQ-5IT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA,
针数168
Reach Compliance Codeunknown
Is SamacsysN
JESD-30 代码S-PBGA-B168
JESD-609代码e1
长度12 mm
内存密度2097152 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度16
混合内存类型Flash+SDRAM
功能数量1
端子数量168
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX16
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状SQUARE
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度0.75 mm
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.5 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度12 mm
Base Number Matches1

文档预览

下载PDF文档
Preliminary
152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP
Features
NAND Flash and Mobile LPDRAM
152-Ball Package-on-Package (PoP)
Combination Memory (TI OMAP™)
MT29C Family
Current production part numbers: See Table 1 on page 3
Features
Figure 1:
PoP Block Diagram
Micron
®
NAND Flash and Mobile LPDRAM
components
RoHS-compliant, “green” package
Separate NAND Flash and Mobile LPDRAM
interfaces
Space-saving package-on-package combination
Low-voltage operation (1.70–1.95V)
Industrial temperature range: –40°C to +85°C
NAND Flash
Power
NAND Flash
Device
NAND Flash
Interface
NAND Flash-Specific Features
• Organization
Page size
x8: 2112 bytes (2048 + 64 bytes)
x16: 1056 words (1024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
LP-DRAM Power
LP-DRAM
Device
LP-DRAM Interface
Mobile LPDRAM-Specific Features
No external voltage reference required
No minimum clock rate requirement
1.8V LVCMOS-compatible inputs
Programmable burst lengths
Partial-array self refresh (PASR)
Deep power-down (DPD) mode
Selectable output drive strength
STATUS REGISTER READ (SRR) supported
1
Options
• LP-DRAM
166 MHz CL3
2
133 MHz CL3
Marking
-6
-75
Notes: 1. Contact factory for remapped SRR output.
2. CL = CAS (READ) latency.
PDF: 09005aef8326e5ac / Source: 09005aef8326e59a
152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

MT29C4G48MAZAPAKQ-5IT相似产品对比

MT29C4G48MAZAPAKQ-5IT MT29C2G48MAKLCJI-6IT MT29C2G24MAAAAHAMD-5IT MT29C2G24MAAAAKAMD-5IT MT29C2G24MAABAHAMD-5IT
描述 Memory Circuit, 128KX16, CMOS, PBGA168, GREEN, VFBGA-168 Memory Circuit, Flash+SDRAM, 128KX16, CMOS, PBGA168, GREEN, VFBGA-168 Memory Circuit, Memory Circuit, Memory Circuit,
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
包装说明 VFBGA, TFBGA, BGA168,23X23,20 VFBGA, VFBGA, VFBGA,
Reach Compliance Code unknown unknown compli compli compli
JESD-30 代码 S-PBGA-B168 S-PBGA-B168 R-PBGA-B130 R-PBGA-B130 R-PBGA-B130
长度 12 mm 12 mm 9 mm 9 mm 9 mm
内存密度 2097152 bit 2097152 bit 1073741824 bi 1073741824 bi 1073741824 bi
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 32 32 32
功能数量 1 1 1 1 1
端子数量 168 168 130 130 130
字数 131072 words 131072 words 33554432 words 33554432 words 33554432 words
字数代码 128000 128000 32000000 32000000 32000000
工作模式 SYNCHRONOUS ASYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
组织 128KX16 128KX16 32MX32 32MX32 32MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA TFBGA VFBGA VFBGA VFBGA
封装形状 SQUARE SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
座面最大高度 0.75 mm 1.1 mm 1 mm 1 mm 1 mm
最大供电电压 (Vsup) 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 BALL BALL BALL BALL BALL
端子节距 0.5 mm 0.5 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 12 mm 12 mm 8 mm 8 mm 8 mm
其他特性 - - ALSO ORGANISED AS 64M X 16 ALSO ORGANISED AS 64M X 16 ALSO ORGANISED AS 64M X 16

 
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