MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMG05N60D/D
Designer’s™ Data Sheet
Insulated Gate Bipolar Transistor
N−Channel Enhancement−Mode Silicon Gate
This IGBT contains a built−in free wheeling diode and a gate
protection zener diodes. Fast switching characteristics result in
efficient operation at higher frequencies. This device is ideally
suited for high frequency electronic ballasts.
Built−In Free Wheeling Diode
Built−In Gate Protection Zener Diodes
Industry Standard Package (SOT223)
High Speed E
off
: Typical 6.5
mJ
@ I
C
= 0.3 A; T
C
= 125°C and
dV/dt = 1000 V/ms
•
Robust High Voltage Termination
•
Robust Turn−Off SOA
C
MMG05N60D
•
•
•
•
IGBT
0.5 A @ 25°C
600 V
4
1
2
3
G
1=G
2=4=C
3=E
E
CASE 318E−04
STYLE 13
TO−261A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameters
Collector−Emitter Voltage
Collector−Gate Voltage (R
GE
= 1.0 MΩ)
Gate−Emitter Voltage — Continuous
Collector Current — Continuous @ T
C
= 25°C
Collector Current
— Continuous @ T
C
= 90°C
Collector Current
— Repetitive Pulsed Current (1)
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance — Junction to Case − IGBT
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Symbol
V
CES
V
CGR
V
CGR
I
C25
I
C90
I
CM
P
D
T
J
, T
stg
R
θJC
R
θJA
T
L
Value
600
600
±
15
0.5
0.3
2.0
1.0
−55 to 150
30
150
260
Unit
Vdc
Vdc
Vdc
Adc
Watt
°C
°C/W
°C
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS
(T
C
≤
150°C)
Single Pulse Drain−to−Source Avalanche
Energy − Starting @ T
C
= 25°C
Energy − Starting
@ T
C
= 125°C
V
CE
= 100 V, V
GE
= 15 V, Peak I
L
= 2.0 A, L = 3.0 mH, R
G
= 25
W
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E
AS
125
40
mJ
Designer’s is a trademark of Motorola, Inc.
REV XXX
©
Motorola IGBT Device
Motorola, Inc. 1998
Data
1
MMG05N60D
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−to−Emitter Breakdown Voltage
(V
GE
= 0 Vdc, I
C
= 250
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(V
CE
= 600 Vdc, V
GE
= 0 Vdc, T
C
= 25°C)
(V
CE
= 600 Vdc, V
GE
= 0 Vdc, T
C
= 125°C)
Gate−Body Leakage Current (V
GE
=
±
15 Vdc, V
CE
= 0 Vdc)
ON CHARACTERISTICS
Collector−to−Emitter On−State Voltage
(V
GE
= 15 Vdc, I
C
= 0.3 Adc, T
C
= 25°C)
(V
GE
= 15 Vdc, I
C
= 0.3 Adc, T
C
= 125°C)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (V
CE
= 10 Vdc, I
C
= 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(I
EC
= 0.3 Adc, T
C
= 25°C)
(I
EC
= 0.3 Adc, T
C
= 125°C)
(I
EC
= 0.1 Adc, T
C
= 25°C)
(I
EC
= 0.1 Adc, T
C
= 125°C)
Reverse Recovery Time @ T
C
= 25°C
I
F
= 0.4 Adc, V
R
= 300 Vdc, dIF/dt = 10 A/ms
Reverse Recovery Stored Charge
I
F
= 0.4 Adc, V
R
= 300 Vdc, dIF/dt = 10 A/ms
SWITCHING CHARACTERISTICS (1)
Turn−Off Delay Time
Fall Time
Turn−Off Switching Loss
Turn−Off Delay Time
Fall Time
Turn−Off Switching Loss
Gate Charge
(
(V
CC
= 300 Vdc, I
C
= 0.4 Adc,
,
,
V
GE
= 15 Vdc, L = 3.0 mH, R
G
= 25
Ω
Vd
30 H
Ω,
T
C
= 25°C, dV/dt = 1000 V/ms)
Energy losses include “tail”
(
(V
CC
= 300 Vdc, I
C
= 0.4 Adc,
,
,
V
GE
= 15 Vdc, L = 3.0 mH, R
G
= 25
Ω
Vd
30 H
Ω,
T
C
= 125°C, dV/dt = 1000 V/ms)
Energy losses include “tail”
(V
CC
= 300 Vdc, I
C
= 0.3 Adc,
V
GE
= 15 Vdc)
t
d(off)
t
f
E
off
t
d(off)
t
f
E
off
Q
T
—
—
—
—
—
—
—
28
150
3.25
21
280
8.0
6.4
—
—
4.25
—
—
10
—
mJ
nC
mJ
ns
ns
V
FEC
—
—
—
—
t
rr
—
Q
RR
—
35
—
150
—
mC
5.0
5.2
2.3
2.3
6.0
—
3.0
—
ns
Vdc
(V
CE
= 20 Vdc, V
GE
= 0 Vdc,
Vd
Vd
f = 1.0 MHz)
C
ies
C
oes
C
res
—
—
—
75
11
1.6
100
20
5.0
pF
V
CE(on)
—
—
V
GE(th)
3.5
—
g
fe
0.3
—
6.0
0.42
6.0
—
—
1.6
1.5
2.0
—
Vdc
mV/°C
Mhos
Vdc
V
(BR)CES
600
—
I
CES
I
CES
I
GES
—
—
—
680
0.7
0.1
5.0
10
—
—
5.0
50
100
mAdc
Vdc
V/°C
µAdc
Symbol
Min
Typ
Max
Unit
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2
Motorola IGBT Device Data
MMG05N60D
2.5
IC , COLLECTOR CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
T
C
= 25°C
2.0
V
GE
= 15 V
12.5 V
10 V
2.5
T
C
= 150°C
2.0
V
GE
= 15 V
12.5 V
10 V
1.5
8.0 V
1.0
1.5
8.0 V
1.0
0.5
0
1
2
3
4
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
0.5
0
0
1
2
3
4
5
6
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
2.5
T
C
= −20°C
IC , COLLECTOR CURRENT (AMPS)
2.0
V
GE
= 15 V
VCE , COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
12.5 V
10 V
2.0
700 mA
1.9
1.8
1.7
1.6
1.5
V
G
= 15 V
1.4
−25
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
500 mA
I
C
= 300 mA
1.5
8.0 V
1.0
0.5
0
1
2
3
4
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 3. Saturation Characteristics
Figure 4. Collector−To−Emitter Saturation
Voltage versus Case Temperature
V FEC , COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
V FEC , EMITTER−TO−COLLECTOR VOLTAGE (VOLTS)
22
T
C
= 150°C
−20°C
17
25°C
12
10
500 mA
8
300 mA
6
4
I
F
= 100 mA
2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
7
2
0
0.5
1.0
1.5
2.0
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 5. Diode Forward Voltage
Figure 6. Diode Forward Voltage versus Case
Temperature
Motorola IGBT Device Data
3
MMG05N60D
VGE, GATE−TO−EMITTER VOLTAGE (VOLTS)
150
T
C
= 25°C
V
GE
= 0 V
C, CAPACITANCE (pF)
100
C
ies
15
10
C
oes
50
C
res
5
V
CE
= 300 V
V
GE
= 15 V
I
C
= 0.3 A
T
C
= 25°C
0
1
2
3
4
5
6
7
0
0
5
10
15
20
25
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Emitter Voltage versus
Total Charge
Ets , TOTAL SWITCHING ENERGY LOSSES (
m
J)
Ets , TOTAL SWITCHING ENERGY LOSSES (
m
J)
60
50
40
30
20
25°C
10
0
0
0.5
1.0
1.5
2.0
I
C
, COLLECTOR CURRENT (AMPS)
L = 3.0 mH
V
CC
= 300 V
V
GE
= 15 V
R
G
= 25
W
dV/dt = 1.0 kV/ms
20
L = 3.0 mH
V
CC
= 300 V
V
GE
= 15 V
R
G
= 25
W
dV/dt = 1.0 kV/ms
I
C
= 0.7 A
T
C
= 125°C
15
10
0.3 A
5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 9. Total Switching Losses versus
Collector Current
Figure 10. Total Switching Losses versus
Case Temperature
2.5
IC , COLLECTOR CURRENT (AMPS)
2.0
1.5
1.0
T
C
= 125°C
V
GE
= 15 V
R
G
= 25
W
L = 3.0 mH
0
100
200
300
400
500
600
0.5
0
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn−Off
Safe Operating Area
4
Motorola IGBT Device Data
MMG05N60D
1.0
D = 0.5
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.2
0.1
0.1
0.05
0.02
0.01
0.01
t
1
SINGLE PULSE
0.001
1.0E−05
1.0E−04
1.0E−03
1.0E−02
1.0E−01
t, TIME (ms)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
R
θJC
(t) = r(t) R
θJC
R
θJC
= 30°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
θJC
(t)
Figure 12. Typical Thermal Response
3.8
0.15
2.0
0.079
4.6
0.181
2.3
0.091
2.0
0.079
1.5
0.059
1.5
0.059
1.5
0.059
6.2
0.244
mm
inches
Motorola IGBT Device Data
5
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