MMPQ2222A
Preferred Device
Quad General Purpose
Transistor
NPN Silicon
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MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
VCEO
VCB
VEB
IC
Value
40
75
5.0
500
Four
Transistors
Equal Power
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
PD
1.0
8.0
PD
2.4
19.2
TJ, Tstg
−55 to +150
Watts
mW/°C
Watts
mW/°C
°C
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
SO−16
CASE 751B
STYLE 4
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
MMPQ2222A
AWLYWW
MMPQ2222A
ic Device Code
A
sembly Location
WL
Lot
Y
WW
Week
Device
MMPQ2222A
Package
SO−16
= Specif-
= As-
= Wafer
= Year
= Work
ORDERING INFORMATION
Shipping
48 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1098
September, 2004 − Rev. 1
Publication Order Number:
MMPQ2222A/D
MMPQ2222A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 10
mAdc,
IE = 0)
Emitter −Base Breakdown Voltage
(IB = 10
mAdc,
IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
−
−
IEBO
−
−
−
−
50
10
100
nAdc
40
75
5.0
−
−
−
−
−
−
−
−
−
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 100
mA,
VCE = 10 V)
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
(IC = 150 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
35
50
75
100
40
50
VCE(sat)
−
−
VBE(sat)
−
−
−
−
1.2
2.0
−
−
0.3
1.0
Vdc
−
−
−
−
−
−
−
−
−
300
−
−
Vdc
−
DYNAMIC CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 1)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
fT
Cob
Cib
200
−
−
350
4.5
17
−
−
−
MHz
pF
pF
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
Turn−Off Time
(VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
ton
−
25
−
ns
toff
−
250
−
ns
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1099
MMPQ2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
+16 V
0
-2 V
1.0 to 100
µs,
DUTY CYCLE
≈
2.0%
1 kΩ
200
+16 V
0
< 2 ns
CS* < 10 pF
1.0 to 100
µs,
DUTY CYCLE
≈
2.0%
1k
1N914
+30 V
200
-14 V
< 20 ns
CS* < 10 pF
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
1000
700
500
hFE , DC CURRENT GAIN
300
200
100
70
50
30
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
VCE = 10 V
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500 700 1.0 k
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
0.6
0.4
0.2
0
0.005
IC = 1.0 mA
10 mA
150 mA
500 mA
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
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1100
MMPQ2222A
200
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
500
300
200
100
70
50
30
20
10
7.0
5.0
t′s = ts - 1/8 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, TIME (ns)
tf
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
300
500
Figure 5. Turn −On Time
10
8.0
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
IC = 1.0 mA, RS = 150
Ω
500
µA,
RS = 200
Ω
100
µA,
RS = 2.0 kΩ
50
µA,
RS = 4.0 kΩ
10
Figure 6. Turn −Off Time
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
f = 1.0 kHz
8.0
6.0
4.0
2.0
0
50
IC = 50
µA
100
µA
500
µA
1.0 mA
0.5 1.0 2.0
5.0 10
20
50 100
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
500
VCE = 20 V
TJ = 25°C
30
20
CAPACITANCE (pF)
Ceb
10
7.0
5.0
3.0
2.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Ccb
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
20 30
50
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
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1101
MMPQ2222A
1.0
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
0
VCE(sat) @ IC/IB = 10
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500 1.0 k
COEFFICIENT (mV/
°
C)
1.0 V
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.1 0.2
0.5
R
qVB
for VBE
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500
R
qVC
for VCE(sat)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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1102
stm32/stm8
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