NVATS5A113PLZ
Power MOSFET
60
V, 29.5 mΩ,
38
A, P-Channel
Automotive Power MOSFET designed for compact and efficient designs and
including high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK
package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING
at Ta = 25C
(Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW
10
s,
duty cycle
1%
Power Dissipation
Tc = 25C
Operating Junction and
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj, Tstg
Value
60
20
38
114
60
55
to +175
Unit
V
V
A
A
W
C
VDSS
60
V
www.onsemi.com
RDS(on) Max
29.5 mΩ @
10
V
38 mΩ @
4.5
V
44 mΩ @
4
V
ID Max
38
A
ELECTRICAL CONNECTION
P-Channel
2, 4
1
1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
1 2
3
ATPAK
MARKING
Avalanche Energy (Single Pulse) (Note 2)
EAS
95
mJ
Avalanche Current (Note 3)
IAV
18
A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD =
10
V, L = 500
H,
IAV =
18
A
3 : L
≤
500
H,
Single pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Junction to Ambient (Note 4)
Symbol
R
JC
R
JA
2
ORDERING INFORMATION
Value
2.5
80.1
Unit
C/W
C/W
See detailed ordering and shipping
information on page 6 of this data sheet.
Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
NVATS5A113PLZ/D
NVATS5A113PLZ
ELECTRICAL CHARACTERISTICS
at Ta
½
25C
(Note 5)
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS =
30
V, VGS =
10
V, ID =
35
A
See Fig.1
VDS =
20
V, f = 1 MHz
Conditions
ID =
1
mA, VGS = 0 V
VDS =
60
V, VGS = 0 V
VGS =
16
V, VDS = 0 V
VDS =
10
V, ID =
1
mA
VDS =
10
V, ID =
18
A
ID =
18
A, VGS =
10
V
ID =
9
A, VGS =
4.5
V
ID =
5
A, VGS =
4
V
1.2
37
22.5
27
29
2,400
250
195
15
125
250
200
55
7.5
12
29.5
38
44
Value
min
60
1
10
2.6
typ
max
Unit
V
A
A
V
S
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VSD
IS =
35
A, VGS = 0 V
Forward Diode Voltage
V
0.98
1.5
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
www.onsemi.com
2