NVATS4A103PZ
Power MOSFET
30
V, 13 mΩ,
60
A, P-Channel
The NVATS4A103PZ is a power MOSFET designed for compact size and
high efficiency which can achieve high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK
package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING
at Ta = 25C
(Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW
10
s,
duty cycle
1%
Power Dissipation
Tc = 25C
Operating Junction and
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj, Tstg
Value
30
20
60
180
60
55
to +175
Unit
V
V
A
A
W
C
VDSS
30
V
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RDS(on) Max
13 mΩ @
10
V
20.5 mΩ @
4.5
V
ID Max
60A
ELECTRICAL CONNECTION
P-Channel
2,4
1
1 : Gate
2 : Drain
3 : Source
4 : Drain
3
4
1 2
3
ATPAK
MARKING
Avalanche Energy (Single Pulse) (Note 2)
EAS
57
mJ
Avalanche Current (Note 3)
IAV
28
A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD =
10
V, L = 100
H,
IAV =
28
A
3 : L
≤
100
H,
Single pulse
ATP103
LOT No.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State (Tc = 25C)
Junction to Ambient (Note 4)
Symbol
R
JC
R
JA
2
ORDERING INFORMATION
Value
2.5
80.1
Unit
C/W
C/W
See detailed ordering and shipping
information on page 6 of this data sheet.
Note 4 : Surface mounted on FR4 board using a 130 mm , 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2017
1
March 2017 - Rev. 0
Publication Order Number :
NVATS4A103PZ/D
NVATS4A103PZ
ELECTRICAL CHARACTERISTICS
at Ta
½
25C
(Note 5)
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS =
15
V, VGS =
10
V, ID =
55
A
See Fig.1
VDS =
10
V, f = 1 MHz
Conditions
ID =
1
mA, VGS = 0 V
VDS =
30
V, VGS = 0 V
VGS =
16
V, VDS = 0 V
VDS =
10
V, ID =
1
mA
VDS =
10
V, ID =
28
A
ID =
28
A, VGS =
10
V
ID =
14
A, VGS =
4.5
V
1.2
45
10
14.5
2,430
555
395
19
400
150
145
47
10
8.7
13
20.5
Value
min
30
1
10
2.6
typ
max
Unit
V
A
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VSD
IS =
55
A, VGS = 0 V
Forward Diode Voltage
V
1.03
1.5
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
0V
--10 V
VIN
VDD = --15 V
VIN
PW = 10
μs
D.C.
≤
1%
G
D
ID = --28 A
RL= 0.54
Ω
VOUT
NVATS4A103PZ
P.G
50
Ω
S
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2
NVATS4A103PZ
--55
ID -- VDS
0V
--10.0
V
--8
.0V
--50
--45
--6
.0
V
5V
--4.
Drain Current, ID -- A
--40
--35
--30
--25
--20
--15
--10
--5
0
0
Drain Current, ID -- A
--4.0V
--50
--16
.
--40
VGS= --3.5V
--30
--20
--10
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
Tc=
75
°
--2
C
5
°
C
25
°
C
--3.0
--3.5
--4.0
--4.5
25
°
C
--5.0
150
175
--1.4
--30
--60
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
30
28
26
24
22
20
18
16
14
12
10
8
6
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
30
RDS(on) -- Tc
ID=
--14A
--28A
Tc=25
°
C
Single pulse
25
20
15
= --4
VGS
.5
A
--14
I
D=
V,
--28
,I
=
-10V
D
=-
V GS
10
5
0
--50
--25
0
25
50
75
100
Gate-to-Source Voltage, VGS -- V
7
gFS -- ID
°
C
Case Temperature, Tc --
°
C
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
IS -- VSD
Forward Transconductance,
gFS
-- S
5
3
2
VDS= --10V
Single pulse
25
VGS=0V
Single pulse
10
7
5
3
2
=
Tc
--2
C
5
°
75
°
C
Source Current, IS -- A
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
0
--0.2
--0.4
Tc=
75
--0.6
--25
°
C
°
C
25
°
C
--0.8
--1.0
Tc=
Single pulse
125
Drain Current, ID -- A
3
2
SW Time -- ID
Forward Diode Voltage, VSD -- V
7
5
3
2
Ciss, Coss, Crss -- VDS
Switching Time, SW Time -- ns
VDD= --15V
VGS= --10V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
10
7
--0.1
Ciss
td(off)
tf
tr
1000
7
5
3
2
Coss
Crss
td(on)
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
2
100
0
--5
--10
--15
--20
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
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3
--25
°
C
A
--1.2
f=1MHz
--25
75
°
C
Tc=25
°
C
Single pulse
--70
ID -- VGS
VDS= --10V
Single pulse
NVATS4A103PZ
--10
VGS -- Qg
VDS= --15V
ID= --55A
--500
SOA
IDP= --180A(PW≤10μs)
Gate-to-Source Voltage, VGS -- V
--8
--100
--6
Drain Current, ID -- A
ID= --60A
1m
s
10
ms
10
0m
s
10
10
0
μ
s
μ
s
--10
--4
Operation in
this area is
limited by RDS(on).
--1.0
DC
op
io
at
er
n
--2
0
0
5
10
15
20
25
30
35
40
45
50
--0.1
--0.1
Tc=25°C
Single pulse
--1.0
--10
--50
Total Gate Charge, Qg -- nC
70
PD -- Tc
Avalanche Energy derating factor -- %
Drain-to-Source Voltage, VDS -- V
120
EAS -- Ta
60
Power Dissipation, PD -- W
100
50
80
40
30
60
40
20
10
0
20
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
Case Temperature, Tc --
°C
10
Ambient Temperature, Ta --
°C
R
θJC
-- Pulse Time
R
θJC
=2.5ºC/W
Thermal Resistance, R
θJC
-- ºC/W
Duty Cycle=0.5
1.0
0.2
0.1
0.05
0.1
.01
0.02
0
le
Sing
e
Puls
0.01
0.00001
0.0001
0.001
0.01
0.1
1.0
10
Pulse Time, PT -- s
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4
NVATS4A103PZ
PACKAGE DIMENSIONS
unit : mm
DPAK (Single Gauge) / ATPAK
CASE 369AM
ISSUE O
4
2
1
3
RECOMMENDED
SOLDERING FOOTPRINT
1 : Gate
2 : Drain
3 : Source
6.7
6.5
4 : Drain
1.5
1.6
2
2.3
2.3
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