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HS1JL MTG

产品描述DIODE GEN PURP 600V 1A SUB SMA
产品类别半导体    分立半导体   
文件大小371KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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HS1JL MTG概述

DIODE GEN PURP 600V 1A SUB SMA

HS1JL MTG规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)600V
电流 - 平均整流(Io)1A
不同 If 时的电压 - 正向(Vf1.7V @ 1A
速度快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)75ns
不同 Vr 时的电流 - 反向漏电流5µA @ 600V
不同 Vr,F 时的电容15pF @ 4V,1MHz
安装类型表面贴装
封装/外壳DO-219AB
供应商器件封装Sub SMA
工作温度 - 结-55°C ~ 150°C

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HS1AL thru HS1ML
Taiwan Semiconductor
CREAT BY ART
High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR T
J
=25
T
J
=125
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θjA
T
J
T
STG
20
50
100
- 55 to +150
- 55 to +150
0.95
5
150
15
75
O
SYMBOL
HS
1AL
HAL
50
35
50
HS
1BL
HBL
100
70
100
HS
1DL
HDL
200
140
200
HS
1FL
HFL
300
210
300
1
30
HS
1GL
HGL
400
280
400
HS
1JL
HJL
600
420
600
HS
HKL
800
560
800
HS
HML
1000
700
1000
1KL 1ML
UNIT
V
V
V
A
A
1.3
1.7
V
μA
pF
ns
C/W
O
O
C
C
Document Number: DS_D1405079
Version: B14

 
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