EASR3212BA3
Features
․Package
in 8mm tape on 7〞diameter reel.
․Compatible
with automatic placement equipment.
․Compatible
with infrared and vapor phase reflow
solder process.
․Mono-color
type.
․Pb-free.
․The
product itself will remain within RoHS compliant version.
Descriptions
․The
EASR3212BA3
SMD LED is much smaller than lead
frame type components, thus enable smaller board
size, higher packing density, reduced storage space
and finally smaller equipment to be obtained.
․Besides,
lightweight makes them ideal for
miniature applications. etc.
Applications
․Backlighting
in dashboard and switch.
․Telecommunication:
indicator and backlighting in
telephone and fax.
․Flat
backlight for LCD, switch and symbol.
․General
use.
Device Selection Guide
Part No.
EASR3212BA3
Page 1 of 10
Chip
Material
InGaN
Emitted Color
Blue
Resin Color
Water Clear
Rev. 0.01
DATASHEET
EASR3212BA3
Package Outline Dimensions
Note:
The tolerances unless mentioned is
±0.1mm
,Unit = mm
Page 2 of 10
Rev. 0.01
DATASHEET
EASR3212BA3
Absolute Maximum Ratings (Ta=25℃)
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
(Duty 1/10 @1KHz)
Power Dissipation
Electrostatic Discharge(HBM)
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
V
R
I
F
I
FP
Pd
ESD
Topr
Tstg
Tsol
Rating
5
25
100
95
150
-40 ~ +85
-40 ~ +90
Unit
V
mA
mA
mW
V
℃
℃
Reflow Soldering : 260℃ for 10sec.
Hand Soldering : 350℃ for 3 sec.
Electro-Optical Characteristics (Ta=25℃)
Parameter
Luminous Intensity
Viewing Angle
Peak Wavelength
Dominant Wavelength
Spectrum Radiation
Bandwidth
Forward Voltage
Reverse Current
Symbol
Iv
2θ1/2
λp
λd
△λ
V
F
I
R
Min.
45.0
-----
-----
464.5
-----
2.7
-----
Typ.
-----
130
468
-----
25
3.3
-----
Max.
112.0
-----
-----
476.5
-----
3.7
50
Unit
mcd
deg
nm
I
F
=20mA
nm
nm
V
μA
V
R
=5V
Condition
Notes:
1.Tolerance of Luminous Intensity
±11%
2.Tolerance of Dominant Wavelength
±1nm
Page 3 of 10
Rev. 0.01
DATASHEET
EASR3212BA3
Bin Range Of Luminous Intensity
Group
Bin
A9
A
A10
A11
A12
Min
464.5
467.5
470.5
473.5
Max
467.5
470.5
473.5
476.5
nm
I
F
=20mA
Unit
Condition
Bin Range Of Luminous Intensity
Bin
P1
P2
Q1
Q2
Min
45.0
57.0
72.0
90.0
Max
57.0
72.0
90.0
112.0
mcd
I
F
=20mA
Unit
Condition
Notes:
1.Tolerance of Luminous Intensity
±11%
2.Tolerance of Dominant Wavelength
±1nm
Page 4 of 10
Rev. 0.01
DATASHEET
EASR3212BA3
Typical Electro-Optical Characteristics Curves
Page 5 of 10
Rev. 0.01