2N3501UB
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DESCRIPTION
This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for high-
reliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as
well as a low profile U4 surface mount. Microsemi also offers numerous other transistor
products to meet higher and lower power ratings with various switching speed requirements in
both through-hole and surface-mount packages.
compliant
Qualified Levels:
JAN, JANTX, JANTXV
AND JANS
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
Surface mount equivalent of JEDEC registered 2N3501 number.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/366.
(See
part nomenclature
for all available options.)
RoHS compliant by design.
UB Package
Also available in:
TO-5 package
(long-leaded)
2N3498L – 2N3501L
APPLICATIONS / BENEFITS
•
•
•
•
General purpose transistors for medium power applications requiring high frequency switching.
Low profile ceramic package.
Lightweight.
Military and other high-reliability applications.
TO-39 (TO-205AD)
package
(leaded)
2N3498 – 2N3501
U4 package
(surface mount)
2N3498U4 – 2N3501U4
MAXIMUM RATINGS
@ T
C
= +25 ºC unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature Range
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Solder Pad
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
SP
= +25 °C
(1)
Symbol
T
J
, T
stg
R
ӨJA
R
ӨJSP
V
CEO
V
CBO
V
EBO
I
C
P
T
Value
-65 to +200
325
90
150
150
6.0
300
0.5
1.5
Unit
°C
o
o
C/W
C/W
V
V
V
mA
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. See
figure 1.
2. See
figure 2.
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 1 of 7
2N3501UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N3501
UB
Surface Mount package
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance
Collector cutoff current, base open
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 2 of 7
2N3501UB
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, pulsed
Collector-Base Cutoff Current
V
CB
= 75 V
V
CB
= 150 V
Emitter-Base Cutoff Current
V
EB
= 4.0 V
V
EB
= 6.0 V
ON CHARACTERISTICS
(1)
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CBO
150
50
10
25
10
V
nA
µA
nA
µA
I
EBO
Forward-Current Transfer Ratio
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 300 mA, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 150 mA, I
B
= 15 mA
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 150 mA, I
B
= 15 mA
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0,
100 kHz < f < 1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1.0 MHz
(1) Pulse Test: pulse width = 300
µs,
duty cycle < 2.0%.
h
FE
35
50
75
100
20
300
V
CE(sat)
0.2
0.4
0.8
1.2
V
V
BE(sat)
V
|h
fe
|
C
obo
1.5
8.0
8.0
pF
C
ibo
80
pF
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 3 of 7
2N3501UB
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
EB
= 5 V; I
C
= 150 mA; I
B1
= 15 mA
Turn-Off Time
I
C
= 150 mA; I
B1
= I
B2
= 15 mA
Symbol
t
on
t
off
Min.
Max.
115
1150
Unit
ns
ns
SAFE OPERATING AREA (See SOA figure and reference
MIL-STD-750 method 3053)
DC Tests
o
T
C
= +25 C, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
V
CE
= 10 V, I
C
= 113 mA
Test 2
V
CE
= 50 V, I
C
= 23 mA
Test 3
V
CE
= 80 V, I
C
= 14 mA
Clamped Switching
o
T
A
= +25 C
Test 1
I
B
= 50 mA, I
C
= 300 mA
Collector Current I
C
(Milliamperes)
Collector to Emitter Voltage V
CE
(Volts)
Maximum Safe Operating Area
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 4 of 7
2N3501UB
GRAPHS
DC Operation Maximum Rating (W)
Tc (°C) (Case)
FIGURE 1
Derating for all devices (R
θ
JSP
)
H
DC Operation Maximum Rating (W)
Tc (°C) (Case)
FIGURE 2
Derating for all devices (R
θ
JA
)
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 5 of 7
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