FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing
October 2017
FOD8316
2.5 A Output Current, IGBT Drive Optocoupler with
Desaturation Detection and Isolated Fault Sensing
Features
• High Noise Immunity Characterized by
Common Mode Rejection – 35 kV/µs Minimum,
V
CM
= 1500 V
PEAK
• 2.5 A Peak Output Current Driving Capability for Most
1200 V / 150 A IGBTs
• Optically Isolated Fault Sensing Feedback
• “Soft” IGBT Turn-off
• Built-in IGBT Protection
– Desaturation Detection
– Under-Voltage Lockout (UVLO) Protection
• Wide Supply Voltage Range: 15 V to 30 V
– P-Channel MOSFETs at Output Stage Enables
Output Voltage Swing Close to the Supply Rail
(Rail-to-Rail Output)
• 3.3 V / 5 V, CMOS/TTL Compatible Inputs
• High Speed
– 250 ns Maximum Propagation Delay Over Full
Operating Temperature Range
• Extended Industrial Temperate Range, -40°C to 100°C
• Safety and Regulatory Approvals
– UL1577, 4,243 V
RMS
for 1 Minute
– DIN EN/IEC 60747-5-5:
1,414 V
PEAK
Working Insulation Voltage Rating
8,000 V
PEAK
Transient Isolation Voltage Rating
• R
DS(ON)
of 1
Ω
(Typical) Offers Lower Power
Dissipation
• User-Configurable: Inverting, Non-inverting,
Auto-reset, Auto-shutdown
• 8 mm Creepage and Clearance Distances
Description
The FOD8316 is an advanced 2.5 A output current IGBT
drive optocoupler capable of driving most 1200 V /150 A
IGBTs. It is ideally suited for fast-switching driving of
power IGBTs and MOSFETs used in motor-control
inverter applications and high-performance power
systems. The FOD8316 offers critical protection features
necessary for preventing fault conditions that lead to
destructive thermal runaway of IGBTs.
The device utilizes ON’s proprietary Optoplanar
®
copla-
nar packaging technology, and optimized IC design to
achieve high noise immunity, characterized by high
common-mode rejection and power supply rejection
specifications.
The FOD8316 consists of an integrated gate drive opto-
coupler featuring low R
DS(ON)
CMOS transistors to drive
the IGBT from rail-to-rail and an integrated high-speed
isolated feedback for fault sensing. The device is housed
in a compact 16-pin small-outline plastic package which
meets the 8 mm creepage and clearance requirements.
Applications
• Industrial Inverter
• Induction Heating
•
Isolated IGBT Drive
© Semiconductor Components Industries, LLC, 2010
FOD8316 Rev. 2
www.onsemi.com
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing
Truth Table
V
IN+
X
X
LOW
X
HIGH
V
IN–
X
X
X
HIGH
LOW
UVLO
(V
DD2
– V
E
)
Active
X
X
X
Not Active
DESAT
Detected?
X
Yes
X
X
No
FAULT
X
LOW
X
X
HIGH
V
O
LOW
LOW
LOW
LOW
HIGH
Pin Configuration
V
IN+
V
IN–
V
DD1
GND1
RESET
FAULT
V
LED1+
V
LED1-
*
1
2
3
4
5
6
7
8
16
V
E
15
V
LED2+
14
DESAT
13
V
DD2
12
V
S
11
V
O
10
V
SS
9
V
SS
Figure 1. Pin Configuration
Pin Definitions
Pin #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Name
V
IN+
V
IN–
V
DD1
GND1
RESET
FAULT
V
LED1+
V
LED1-
V
SS
V
SS
V
O
V
S
V
DD2
DESAT
V
LED2+
V
E
Description
Non-inverting Gate Drive Control Input
Inverting Gate-Drive Control Input
Positive Input Supply Voltage (3 V to 5.5 V)
Input Ground
FAULT Reset Input
Fault Output (Open Drain)
LED 1 Anode (Do not connect. Leave floating.)
LED 1 Cathode (Must be connected to ground.)
Output Supply Voltage (Negative)
Output Supply Voltage (Negative)
Gate-Drive Output Voltage
Pull-up PMOS Transistor Source
Positive Output Supply Voltage
Desaturation Voltage Input
LED 2 Anode (Do not connect. Leave floating.)
Output Supply Voltage / IGBT Emitter
© Semiconductor Components Industries, LLC, 2010
FOD8316 Rev. 2
www.onsemi.com
2
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing
Block Diagram
V
LED1+
7
Output IC
V
DD1
3
V
IN+
V
IN–
1
2
11
Input IC
13
12
V
DD2
V
S
FAULT
6
UVLO
Gate Drive
Optocoupler
V
O
Driver
LED1
GND1
4
V
LED1–
8
DESAT
Shield
9,10
14
V
SS
DESAT
V
E
RESET
5
Fault
LED2
16
Fault Sense
Optocoupler
Shield
15
V
LED2+
Figure 2. Functional Block Diagram
© Semiconductor Components Industries, LLC, 2010
FOD8316 Rev. 2
www.onsemi.com
3
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings must be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1
Rated Mains Voltage < 150 V
RMS
Rated Mains Voltage < 300 V
RMS
Rated Mains Voltage < 450 V
RMS
Rated Mains Voltage < 600 V
RMS
Rated Mains Voltage < 1000 V
RMS
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
I–IV
I–IV
I–IV
I–IV
I–III
40/100/21
2
Max.
Unit
CTI
V
PR
Comparative Tracking Index (DIN IEC 112/VDE 0303 Part 1)
Input-to-Output Test Voltage, Method b, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method a, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
175
2651
2262
1414
8000
8.0
8.0
0.5
150
100
600
10
9
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
°C
mW
mW
Ω
V
IORM
V
IOTM
Maximum Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Safety Limit Values – Maximum Values in Failure;
T
Case
P
S,INPUT
P
S,OUTPUT
R
IO
Case Temperature
Safety Limit Values – Maximum Values in Failure;
Input Power
Safety Limit Values – Maximum Values in Failure;
Output Power
Insulation Resistance at T
S
, V
IO
= 500 V
© Semiconductor Components Industries, LLC, 2010
FOD8316 Rev. 2
www.onsemi.com
4
FOD8316 — 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T
A
= 25ºC unless otherwise specified.
Symbol
T
STG
T
OPR
T
J
T
SOL
Parameter
Storage Temperature
Operating Temperature
Junction Temperature
Lead Wave Solder Temperature
(no solder immersion)
Refer to reflow temperature profile on page 27.
Fault Output Current
Peak Output Current
(1)
Negative Output Supply Voltage
(2)
Positive Output Supply Voltage
Gate Drive Output Voltage
Output Supply Voltage
Positive Input Supply Voltage
Input Voltages
Fault Pin Voltage
Source of Pull-up PMOS Transistor Voltage
DESAT Voltage
Input Power
Dissipation
(3)(5)
Dissipation
(4)(5)
Output Power
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
Units
ºC
ºC
ºC
ºC
I
FAULT
I
O(PEAK)
V
E
– V
SS
V
DD2
– V
E
V
O(peak)
V
DD2
– V
SS
V
DD1
V
IN+
, V
IN-
and V
RESET
V
FAULT
V
S
V
DESAT
PD
I
PD
O
15
3
0 to 15
-0.5 to 35 – (V
E
– V
SS
)
-0.5 to 35
-0.5 to 35
-0.5 to 6
-0.5 to V
DD1
-0.5 to V
DD1
V
SS
+ 6.5 to V
DD2
V
E
to V
E
+ 25
100
600
mA
A
V
V
V
V
V
V
V
V
V
mW
mW
Notes:
1. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%.
2. This negative output supply voltage is optional. It’s only needed when negative gate drive is implemented. Refer to
“Dual Supply Operation – Negative Bias at Vss” on page 23.
3. No derating required across temperature range.
4. Derate linearly above 64°C, free air temperature at a rate of 10.2 mW/°C
5. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected
to conditions outside these ratings.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. ON does not recom-
mend exceeding them or designing to absolute maximum ratings.
Symbol
T
A
V
DD1
V
DD2
– V
SS
V
E
– V
SS
V
DD2
– V
E
V
S
Input Supply
Parameter
Ambient Operating Temperature
Voltage
(6)
Total Output Supply Voltage
Negative Output Supply Voltage
Positive Output Supply Voltage
(6)
Source of Pull-up PMOS Transistor Voltage
Min.
-40
3
15
0
15
V
SS
+ 7.5
Max.
+100
5.5
30
15
30 – (V
E
– V
SS
)
V
DD2
Unit
ºC
V
V
V
V
V
Note:
6. During power up or down, it is important to ensure that V
IN+
remains low until both the input and output supply
voltages reaches the proper recommended operating voltages to avoid any momentary instability at the output state.
See also the discussion in the “Time to Good Power” section on page 23.
© Semiconductor Components Industries, LLC, 2010
FOD8316 Rev. 2
www.onsemi.com
5
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