TB6593FNG
Toshiba Bi-CD Integrated Circuit Silicon Monolithic
Driver IC for DC motor
TB6593FNG
TB6593FNG is a driver IC for DC motor with output
transistor in LD MOS structure with low ON-resistor. Two
input signals, IN1 and IN2, can choose one of four modes
such as CW, CCW, short break, and stop mode.
Features
•
•
•
•
•
•
•
•
Power supply voltage
Output current
Output low ON resistor
: VM = 15 V（Max）
: Iout = 1.2 A (ave)/3.2 A (peak)
: 0.35
Ω
((typ. @VM
≥
5 V)
Weight: 0.09 g (typ.)
Standby (Power save)system
CW/CCW/short break/stop function modes
Built-in thermal shutdown circuit and low voltage detecting circuit
Small faced package（SSOP20:0.65 mm pitch）
RoHS compatible
*
This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product,
ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive
mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at
reasonable levels.
© 2014 TOSHIBA Corporation
1
2014-10-01
TB6593FNG
Block Diagram
Vcc
STBY
20
UVLO
Standby
17
16
VM4
VM3
VM1
VM2
O1
O1
O2
O2
PGND1
PGND2
PGND3
PGND4
PGND5
PGND6
3
4
5
IN1
18
6
IN2
19
Control
Logic
TSD
H-SW
Driver
7
14
15
PWM
2
8
9
10
11
GND
1
12
13
Pin Functions
Pin NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Symbol
GND
PWM
STBY
VM1
VM2
O1
O1
PGND1
PGND2
PGND3
PGND4
PGND5
PGND6
O2
O2
VM3
VM4
IN1
IN2
Vcc
Output2
VM supply
Control signal input 1
Control signal input 2
Small signal supply
VM = 2.5 V to 13.5 V
200 kΩ pull-down at internal
Vcc = 2.7 V to 5.5 V
Power GND
Characteristics
Small signal GND
PWM signal input
Standby signal input
VM supply
Output1
“H” = Active/200 kΩ pull-down at internal
“L” = Standby/200 kΩ pull-down at internal
VM = 2.5 V to 13.5 V
Remarks
2
2014-10-01
TB6593FNG
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
Input voltage
Output voltage
Output current
Symbol
VM
Vcc
VIN
Vout
Iout
Iout (peak)
Rating
15
6
-0.2 to 6
15
1.2
3.2
4.5
1.18
Unit
V
V
V
A
IN1,IN2,STBY,PWM pins
O1,O2 pins
Remarks
tw = 10 ms,
Superimposed pulse,
Duty is 20 % or less.
tw = 10 ms, Single pulse
76.2 mm × 114.3 mm × 1.6 mm When it is packaged to the board made of
glass-epoxy (Cu 30 %).
Power dissipation
PD
0.96
0.71
W
50 mm × 50 mm × 1.6 mm When it is packaged to the board made of
glass-epoxy (Cu 40 %).
IC only
Operating
temperature
Storage temperature
Topr
Tstg
-20 to 85
-55 to 150
°C
°C
Operating Ranges
(Ta
=
−20
to 85
°C)
Characteristics
Symbol
Vcc
VM
Iout
fPWM
Min
2.7
2.5
―
―
Typ.
3
5
―
―
Max
5.5
13.5
1.0
100
Unit
V
V
A
kHz
Supply voltage
Output current (H-SW)
Switching frequency
(w)
P
D
- Ta
PD - Ta
1.50
Power dissipation P
D
(W)
③
1.00
②
①
IC only
①IC単½θj-a=176℃/W
②
Mounted
②基板実装時
Board,
on Glass-Epoxy
PCB面積
mm, Cu film area
(50 mm × 50 mm × 1.6
50×50×1.6mm
≥
40 %)
Cu箔面積≧40%
③
Mounted on Glass-Epoxy Board,
③基板実装時
(76.2 mm ×
PCB面積
× 1.6 mm, Cu film
114.3 mm
76.2×114.3×1.6mm
area
≥
30 %)
Cu箔面積≧30%
①
0.50
0.00
0
50
Ambient temperature Ta (℃)
Ta (℃)
100
150
3
2014-10-01
TB6593FNG
H-SW Control Function
Input
IN1
H
IN2
H
PWM
H/L
H
L
H
L
H/L
STBY
H
H
H
H
H
H
OUT1
L
L
L
H
L
Output
OUT2
L
H
L
L
L
Mode
Short break
CCW
Short break
CW
Short break
Stop
L
H
H
L
L
L
OFF
(High impedance)
OFF
(High impedance)
H/L
H/L
H/L
L
Standby
H-SW Operating Description
・
prevent penetrating current, dead time t2 and t4
To
（300
ns Designed value） provided in switching to each mode
：
is
in the IC.
VM
VM
VM
OUT1
M
OUT2
OUT1
M
OUT2
OUT1
M
OUT2
GND
<ON>
t1
VM
<OFF>
t2
GND
<Short break>
t3
VM
GND
OUT1
M
OUT2
OUT1
M
OUT2
GND
<OFF>
t4
<ON>
t5
GND
VM
OUT1
Voltage wave
t1
t3
GND
t5
t2
t4
4
2014-10-01
TB6593FNG
Electrical Characteristics
(unless otherwise specified, Vcc
=
3 V, VM
=
5 V, Ta
=
25°C)
Characteristics
Symbol
Icc
Test Condition
STBY = Vcc
STBY = 0 V
Min
―
―
―
2
-0.2
Typ.
0.9
―
―
―
―
15
―
―
―
15
―
0.35
―
―
1
1
2.0
2.2
170
20
Max
1.2
1
1
Vcc+0.2
0.8
25
1
Vcc+0.2
0.8
25
1
0.5
1
―
1.1
1.1
―
―
―
Unit
mA
μA
V
μA
V
μA
V
μA
V
V
Supply current
Icc(STB)
IM(STB)
VIH
VIL
IIH
IIL
VIH(STB)
VIL(STB)
IIH(STB)
IIL(STB)
Vsat(U+L)
IL(U)
IL(L)
VF(U)
VF(L)
UVLD
UVLC
TSD
ΔTSD
Control input voltage
Control input current
Standby input voltage
Standby input current
Output saturating voltage
Output leakage current
Regenerative diode
VF
Low voltage detecting voltage
Recovering voltage
Thermal shutdown circuit operating
temperature
Thermal shutdown hysteresis
VIN = 3 V
VIN = 0 V
5
―
2
-0.2
VIN = 3 V
VIN = 0 V
Io = 1 A
VM = Vout = 15 V
VM = 15 V, Vout = 0 V
IF = 1 A
(Designed value)
5
―
―
―
-1
―
―
―
―
―
(Designed value)
―
°C
―
5
2014-10-01
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