GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
Two-Line ESD-Protection in LLP75
Features
• Two-line ESD-protection device
• ESD-immunity acc. IEC 61000-4-2
± 30 kV contact discharge
e3
± 30 kV air discharge
• Space saving LLP package
• Lead (Pb)-free component
• Lead finish = "e3" = matte tin (Sn)
• Non-magnetic
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
20514
2
20237
1
Marking
(example only)
XX
YY
21001
Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
Ordering Information
Device name
GSOT03C-HT3
GSOT04C-HT3
GSOT05C-HT3
GSOT08C-HT3
GSOT12C-HT3
GSOT15C-HT3
GSOT24C-HT3
GSOT36C-HT3
Ordering code
GSOT03C-HT3-GS08
GSOT04C-HT3-GS08
GSOT05C-HT3-GS08
GSOT08C-HT3-GS08
GSOT12C-HT3-GS08
GSOT15C-HT3-GS08
GSOT24C-HT3-GS08
GSOT36C-HT3-GS08
Taped units per reel
(8 mm tape on 7" reel)
3000
3000
3000
3000
3000
3000
3000
3000
Minimum order quantity
15000
15000
15000
15000
15000
15000
15000
15000
Package Data
Device name
GSOT03C-HT3
GSOT04C-HT3
GSOT05C-HT3
GSOT08C-HT3
GSOT12C-HT3
GSOT15C-HT3
GSOT24C-HT3
GSOT36C-HT3
Package
name
LLP75-3B
LLP75-3B
LLP75-3B
LLP75-3B
LLP75-3B
LLP75-3B
LLP75-3B
LLP75-3B
Marking
code
03
04
05
08
12
15
24
36
Weight
5.1 mg
5.1 mg
5.1 mg
5.1 mg
5.1 mg
5.1 mg
5.1 mg
5.1 mg
Molding compound
flammability rating
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
Moisture sensitivity level
Soldering conditions
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Document Number 85825
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
Absolute Maximum Ratings
GSOT03C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
30
30
369
504
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
GSOT04C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
30
30
429
564
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
GSOT05C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
30
30
480
612
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
www.vishay.com
2
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85825
Rev. 1.7, 21-Apr-08
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
GSOT08C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
18
18
345
400
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
GSOT12C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
12
12
312
337
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
GSOT15C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
8
8
230
245
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Document Number 85825
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
GSOT24C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
5
5
235
240
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
GSOT36C-HT3
Rating
Test condition
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
P
= 8/20 µs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
Symbol
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
3.5
3.5
248
252
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
A
W
W
kV
kV
°C
°C
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
www.vishay.com
4
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85825
Rev. 1.7, 21-Apr-08
GSOT03C-HT3 to GSOT36C-HT3
Vishay Semiconductors
BiAs-Mode (2-line Bidirectional Asymmetrical protection mode)
With the
GSOTxxC-HT3
two signal- or data-lines (L1, L2) can be protected against voltage transients. With
pin 3 connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected.
As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum
Reverse Working Voltage
(V
RWM
) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3
offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The
Clamping Voltage
(V
C
) is defined by the
BReakthrough Voltage
(V
BR
) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low
Forward Voltage
(V
F
) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the
GSOTxxC-HT3
clamping behaviour is
Bidirectional
and
Asymmetrical
(BiAs).
L1
L2
2
1
3
20239
If a higher surge current or
Peak Pulse current
(I
PP
) is needed, both protection diodes in the
GSOTxxC-HT3
can also be used in parallel in order to "double" the performance.
This offers:
•
double surge power = double peak pulse current (2 x
I
PPM
)
•
halve line inductance = reduced clamping voltage
•
halve line resistance = reduced clamping voltage
•
double
Diode Capacitance
(2 x
C
D
)
•
double
Reverse
leakage
current
(2 x
I
R
)
L1
2
1
3
20240
Document Number 85825
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
5
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