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MT47H128M4B6-3:D TR

产品描述IC DRAM 512M PARALLEL 60FBGA
产品类别存储   
文件大小5MB,共122页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 全文预览

MT47H128M4B6-3:D TR概述

IC DRAM 512M PARALLEL 60FBGA

MT47H128M4B6-3:D TR规格参数

参数名称属性值
存储器类型易失
存储器格式DRAM
技术SDRAM - DDR2
存储容量512Mb (128M x 4)
时钟频率333MHz
写周期时间 - 字,页15ns
访问时间450ps
存储器接口并联
电压 - 电源1.7 V ~ 1.9 V
工作温度0°C ~ 85°C(TC)
安装类型表面贴装
封装/外壳60-FBGA
供应商器件封装60-FBGA

文档预览

下载PDF文档
512Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 Banks
MT47H64M8 – 16 Meg x 8 x 4 Banks
MT47H32M16 – 8 Meg x 16 x 4 Banks
Features
RoHS compliant
V
DD
= +1.8V ±0.1V, V
DD
Q = +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8,192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
Supports JEDEC clock jitter specification
Options
Marking
• Configuration
128 Meg x 4 (32 Meg x 4 x 4 banks)
128M4
64 Meg x 8 (16 Meg x 8 x 4 banks)
64M8
32 Meg x 16 (8 Meg x 16 x 4 banks)
32M16
• FBGA package (Pb-free)
84-ball FBGA (12mm x 12.5mm) Rev. B
CC
84-ball FBGA (10mm x 12.5mm) Rev. D
BN
84-ball FBGA (8mm x 12.5mm) Rev. F
HR
60-ball FBGA (12mm x 10mm) Rev. B
CB
60-ball FBGA (10mm x 10mm) Rev. D
B6
60-ball FBGA (8mm x 10mm) Rev. F
CF
• FBGA package (with lead)
84-ball FBGA (12mm x 12.5mm) Rev. B
GC
84-ball FBGA (10mm x 12.5mm) Rev. D
FN
84-ball FBGA (8mm x 12.5mm) Rev. F
HW
60-ball FBGA (12mm x 10mm) Rev. B
GB
60-ball FBGA (10mm x 10mm) Rev. D
F6
60-ball FBGA (8mm x 10mm) Rev. F
JN
• Timing – cycle time
2.5ns @ CL = 5 (DDR2-800)
-25E
2.5ns @ CL = 6 (DDR2-800)
-25
3.0ns @ CL = 4 (DDR2-667)
-3E
3.0ns @ CL = 5 (DDR2-667)
-3
3.75ns @ CL = 4 (DDR2-533)
-37E
1
5.0ns @ CL = 3 (DDR2-400)
-5E
1
• Self refresh
Standard
None
Low-power
L
• Operating temperature
Commercial (0°C
T
C
85°C)
None
Industrial (–40°C
T
C
95°C;
IT
–40°C
T
A
85°C)
Automotive, Revision :D only
AT
(–40°C
T
C
, T
A
105°C)
• Revision
:B
1
/:D
1
/:F
Notes:
1. Not recommended for new designs
PDF: 09005aef82f1e6e2/Source: 09005aef821aed36
512Mb_DDR2_x4x8x16_D1.fm - 512Mb DDR2: Rev. L; Core DDR2: Rev. C 4/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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