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ISL6614ACBZA

产品描述IC DRIVER DUAL SYNC BUCK 14-SOIC
产品类别模拟混合信号IC    驱动程序和接口   
文件大小591KB,共12页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
标准
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ISL6614ACBZA概述

IC DRIVER DUAL SYNC BUCK 14-SOIC

ISL6614ACBZA规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Renesas(瑞萨电子)
零件包装代码SOIC
包装说明SOP, SOP14,.25
针数14
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G14
JESD-609代码e3
长度8.65 mm
湿度敏感等级3
功能数量2
端子数量14
最高工作温度85 °C
最低工作温度
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP14,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源12 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压13.2 V
最小供电电压10.8 V
标称供电电压12 V
电源电压1-最大12 V
电源电压1-分钟5 V
表面贴装YES
温度等级OTHER
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度3.9 mm

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DATASHEET
ISL6614A
Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
The ISL6614A integrates two ISL6613A MOSFET drivers and
is specifically designed to drive two Channel MOSFETs in a
synchronous rectified buck converter topology. These drivers
combined with HIP63xx or ISL65xx Multi-Phase Buck PWM
controllers and N-Channel MOSFETs form complete core
voltage regulator solutions for advanced microprocessors.
The ISL6614A drives both the upper and lower gates
simultaneously over a range from 5V to 12V. This drive
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during startup.
The ISL6614A also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
FN9160
Rev.4.00
May 5, 2008
Features
• Pin-to-pin Compatible with HIP6602 SOIC Family
• Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves
PCB Efficiency and has a Thinner Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
FN9160 Rev.4.00
May 5, 2008
Page 1 of 12
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